Ontology highlight
ABSTRACT:
SUBMITTER: Wang JC
PROVIDER: S-EPMC6215173 | biostudies-literature | 2018 Oct
REPOSITORIES: biostudies-literature
Nanomaterials (Basel, Switzerland) 20181008 10
High-k material charge trapping nano-layers in flash memory applications have faster program/erase speeds and better data retention because of larger conduction band offsets and higher dielectric constants. In addition, Ti-doped high-k materials can improve memory device performance, such as leakage current reduction, k-value enhancement, and breakdown voltage increase. In this study, the structural and electrical properties of different annealing temperatures on the Nb₂O₅ and Ti-doped Nb₂O₅(TiN ...[more]