Dataset Information

Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN.

ABSTRACT: Both yellow luminescence (YL) and blue luminescence (BL) bands of GaN films have been investigated for decades, but few works report the relationship between them. In this study, two sets of GaN samples grown via metalorganic chemical vapor deposition (MOCVD) were investigated. A close relationship was found between the YL and BL bands for unintentionally doped GaN and Si-doped GaN samples, both of which were grown without intentional acceptor doping. It was found that the intensity ratio of blue luminescence to yellow luminescence (IBL/IYL) decreases sharply with the increase in carbon impurity concentration, even though both IBL and IYL increase obviously. It was also found that IBL/IYL decreases sharply with the increase in Si doping concentration. It is suggested that the C and Si impurities play important role in linkage and competition of the blue and yellow luminescence.

SUBMITTER: Liang F

PROVIDER: S-EPMC6316107 | biostudies-literature | 2018 Dec

REPOSITORIES: biostudies-literature

ACCESS DATA

Publications

Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN.

Liang Feng F Zhao Degang D Jiang Desheng D Liu Zongshun Z Zhu Jianjun J Chen Ping P Yang Jing J Liu Shuangtao S Xing Yao Y Zhang Liqun L

Nanomaterials (Basel, Switzerland) 20181210 12

Both yellow luminescence (YL) and blue luminescence (BL) bands of GaN films have been investigated for decades, but few works report the relationship between them. In this study, two sets of GaN samples grown via metalorganic chemical vapor deposition (MOCVD) were investigated. A close relationship was found between the YL and BL bands for unintentionally doped GaN and Si-doped GaN samples, both of which were grown without intentional acceptor doping. It was found that the intensity ratio of blu ...[more]

PMID: 30544659

Similar Datasets

Project description:The intensive measures of luminescence in a GaN/InGaN multiple quantum well system are used to examine the thermodynamics and phenomenological structure. The radiative /nonradiative transitions along with absorbed or emitted phonons that occur between the different quantum states of the electrons and holes associated with these processes make the quantum efficiency of a semiconductor nanosystem in an equilibrium state an extensive property. It has long been recognized that tuning of the indium (In) composition in InGaN interlayers gives the potential to obtain a spectrum in the near-infrared to near-ultraviolet spectral range. The thermodynamic intensive properties, including the Debye temperature, carrier temperature, and junction temperature, are the most appropriate metrics to describe the optical-related interactions inherent in a given heterostructure and so can be used as the state variables for understanding the quantum exchange behaviors. The energetic features of the quantum processes are characterized based on analysis of the intensive parameters as determined by means of electroluminescence (EL) and photoluminescence (PL) spectroscopy and current-voltage measurement and then correlated with the designed InGaN/GaN microstructures. According to the McCumber-Sturge theory, the EL and PL Debye temperatures obtained experimentally signal the strength of the electron-phonon and photon-phonon interaction, respectively, while the EL and PL carrier/junction temperatures correspond to the carrier localization. Higher EL Debye temperatures and lower EL carrier/junction temperatures reflect significantly higher luminescence quantum yields, indicative of electron-phonon coupling in the transfer of thermal energy between the confined electrons and the enhancement by excited phonons of heat-assisted emissions. On the other hand, the observation of low luminescence efficiency, corresponding to the lower PL Debye temperatures and higher PL carrier/junction temperatures, is attributed to photon-phonon coupling. These findings are in good accordance to the dependence of the EL and PL quantum efficiency on the In-content of the InGaN/GaN barriers, suggesting that the characteristic Debye and carrier/junction temperatures are intensive parameters useful for assessing the optical properties of a nano-engineered semiconductor heterostructure.

Project description:Calcia-alumina binary compounds doped with rare earths and some transition metals cations show persistent luminescence from the visible to the infrared range. Specifically, the blue light can be obtained through the Eu2+ activator center in a potential host, such as dodecacalcium hepta-aluminate (Ca12Al14O33) and monocalcium aluminate (CaAl2O4). By doping with Nd3+, the persistent luminescence can be substantially prolonged; for this reason, the Eu/Nd pair is a potential choice for developing long-lasting blue luminescence. Herein, the phase evolution of the calcia-alumina system via molten salt synthesis is reported as a function of the synthesis temperature and the atmospheric environment. The fraction of CaAl2O4 phase increases when the temperature is higher. Synthesized microparticles of platelet-type morphology represent isolated nanostructured ceramic pieces. Under visible light, the particles are white. This indicates that the followed process solves the dark-gray coloring of phosphor when is synthesized in a reduced atmosphere at high temperature. As regards the synthesis mechanism, which is assisted by the molten flux, the dissolution-diffusion transport process is promoted at the surface of the alumina microparticles. In fact, the emission intensity can be modulated through the phase of the Eu-doped calcium-aluminate discrete platelets synthesized. Consequently, the photoluminescence intensity depends also on the oxidation state of the Eu ion. X-ray absorption near-edge structure and photoluminescence measurements corroborate the Eu reduction and the grain coarsening with the enhancement of the blue emission. The doped phosphors with Eu/Nd show a broad and strong absorption in the region of 320-400 nm and a broad emission band at around 440 nm when they are excited in this absorption range. From a broader perspective, our findings prove that the Ca12Al14O33 and CaAl2O4 phases open new opportunities for research into the design of blue long-lasting emitters for a wide range of fields from ceramic to optoelectronic materials.

Dataset Information

Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN.

Publications

Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN.

Similar Datasets

OmicsDI is part of the ELIXIR infrastructure

Tweets