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Alternative Face-on Thin Film Structure of Pentacene.

ABSTRACT: Pentacene attracts a great deal of attention as a basic material used in organic thin-film transistors for many years. Pentacene is known to form a highly ordered structure in a thin film, in which the molecular long axis aligns perpendicularly to the substrate surface, i.e., end-on orientation. On the other hand, the face-on oriented thin film, where the molecular plane is parallel to the substrate, has never been found on an inert substrate represented by SiO2. As a result, the face-on orientation has long been believed to be generated only on specific substrates such as a metal single crystal. In the present study, the face-on orientation grown on a SiO2 surface has first been identified by means of visible and infrared p-polarized multiple-angle incidence resolution spectrometry (pMAIRS) together with two-dimensional grazing incidence X-ray diffraction (2D-GIXD). The combination of the multiple techniques readily reveals that the face-on phase is definitely realized as the dominant component. The face-on film is obtained when the film growth is kinetically restricted to be prevented from transforming into the thermodynamically stable structure, i.e., the end-on orientation. This concept is useful for controlling the molecular orientation in general organic semiconductor thin films.

SUBMITTER: Shioya N

PROVIDER: S-EPMC6345764 | biostudies-literature | 2019 Jan

REPOSITORIES: biostudies-literature

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Alternative Face-on Thin Film Structure of Pentacene.

Shioya Nobutaka N Murdey Richard R Nakao Kazuto K Yoshida Hiroyuki H Koganezawa Tomoyuki T Eda Kazuo K Shimoaka Takafumi T Hasegawa Takeshi T

Scientific reports 20190124 1

Pentacene attracts a great deal of attention as a basic material used in organic thin-film transistors for many years. Pentacene is known to form a highly ordered structure in a thin film, in which the molecular long axis aligns perpendicularly to the substrate surface, i.e., end-on orientation. On the other hand, the face-on oriented thin film, where the molecular plane is parallel to the substrate, has never been found on an inert substrate represented by SiO<sub>2</sub>. As a result, the face ...[more]

PMID: 30679681

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Project description:The key impact and significance of a multilayer polymer-based dielectric system on the remarkable photoresponse properties of zinc phthalocyanine (ZnPc)-based photosensitive organic field-effect transistors (PS-OFETs) have been systematically analyzed at various incident optical powers. A combination of inorganic aluminum oxide (Al2O3) and organic nonpolar poly(methyl methacrylate) (PMMA) is used as the bilayer dielectric configuration, whereas in the trilayer dielectric system, a bilayer polymer dielectric, consisting of PMMA, as the low-k dielectric polymer, on top of poly(vinyl alcohol) (PVA), the high-k polar dielectric, has been fabricated along with Al2O3 as the third layer. Before fabricating the OFETs, a systematic optimization of the nature of growth of the ZnPc molecules, deposited on PMMA-coated glass substrates at different substrate temperatures (T s) was performed and examined by atomic-force microscopy, field-emission scanning electron microscopy, X-ray diffraction, and Raman analysis. At 90 °C, the fabricated PS-OFETs with the Al2O3/PVA/PMMA trilayer dielectric configuration showed the best p-channel behavior, with an enhanced and remarkable photoresponsivity of R ∼ 9689.39 A W-1 compared to that of the Al2O3/PMMA bilayer dielectric system (R ∼ 2679.40 A W-1) due to the polarization of the dipoles inside the polar PVA dielectric, which increases the charge transport through the channel. The charge carrier mobility of the device also improved by one order (μh ∼ 1.3 × 10-2 cm2 V-1 s-1) compared to that of the bilayer dielectric configuration (μh ∼ 3.5 × 10-3 cm2 V-1 s-1). The observed specific detectivity (D*) and NEP values of the bilayer dielectric system were 6.01 × 1013 Jones and 2.655 × 10-17 W Hz-1/2, whereas for the trilayer dielectric system, the observed D* and NEP values were 5.13 × 1014 Jones and 1.043 × 10-17 W Hz-1/2, respectively. Additionally, the operating voltage of each of the fabricated devices was also very low (-10 V) due to the influence of the inorganic high-k Al2O3 dielectric layer. The electrical stability of all of the fabricated devices was also investigated by bias stress analysis under both light and dark conditions in vacuum. To the best of our knowledge, the photoresponsivity (R) reported here with an Al2O3/PVA/PMMA trilayer dielectric configuration is the highest reported value for thin film-based PS-OFETs, at a remarkably low operating voltage of -10 V, on low-cost glass substrates without indium tin oxide or/and Si/SiO2.

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Alternative Face-on Thin Film Structure of Pentacene.

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Alternative Face-on Thin Film Structure of Pentacene.

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