Dataset Information

Improved Ferroelectric Performance of Mg-Doped LiNbO₃ Films by an Ideal Atomic Layer Deposited Al₂O₃ Tunnel Switch Layer.

ABSTRACT: Bilayer structures composed of 5% Mg-doped LiNbO₃ single-crystal films and ultrathin Al₂O₃ layers with thickness ranging from 2 to 6?nm have been fabricated by using ion slicing technique combined with atomic layer deposition method. The transient domain switching current measurement results reveal that the P-V hysteresis loops are symmetry in type II mode with single voltage pulse per cycle, which may be attributed to the built-in electric field formed by asymmetric electrodes and compensation of an internal imprint field. Besides, the inlaid Al₂O₃, as an ideal tunnel switch layer, turns on during ferroelectric switching, but closes during the post-switching or non-switching under the applied pulse voltage. The Al₂O₃ layer blocks the adverse effects such as by-electrode charge injection and improves the fatigue endurance properties of Mg-doped LiNbO₃ ferroelectric capacitors. This study provides a possible way to improve the reliability properties of ferroelectric devices in the non-volatile memory application.

SUBMITTER: Zhang Y

PROVIDER: S-EPMC6468035 | biostudies-literature | 2019 Apr

REPOSITORIES: biostudies-literature

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Improved Ferroelectric Performance of Mg-Doped LiNbO3 Films by an Ideal Atomic Layer Deposited Al2O3 Tunnel Switch Layer.

Zhang Yan Y Ren Qing Hua QH Chai Xiao Jie XJ Jiang Jun J Yang Jian Guo JG Jiang An Quan AQ

Nanoscale research letters 20190416 1

Bilayer structures composed of 5% Mg-doped LiNbO3 single-crystal films and ultrathin Al2O3 layers with thickness ranging from 2 to 6 nm have been fabricated by using ion slicing technique combined with atomic layer deposition method. The transient domain switching current measurement results reveal that the P-V hysteresis loops are symmetry in type II mode with single voltage pulse per cycle, which may be attributed to the built-in electric field formed by asymme ...[more]

PMID: 30993547

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Project description:Atomic-layer-deposited alumina (ALD Al2O3) can be utilized for passivation, structural, and functional purposes in electronics. In all cases, the deposited film is usually expected to maintain chemical stability over the lifetime of the device or during processing. However, as-deposited ALD Al2O3 is typically amorphous with poor resistance to chemical attack by aggressive solutions employed in electronics manufacturing. Therefore, such films may not be suitable for further processing as solvent treatments could weaken the protective barrier properties of the film or dissolved material could contaminate the solvent baths, which can cause cross-contamination of a production line used to manufacture different products. On the contrary, heat-treated, crystalline ALD Al2O3 has shown resistance to deterioration in solutions, such as standard clean (SC) 1 and 2. In this study, ALD Al2O3 was deposited from four different precursor combinations and subsequently annealed either at 600, 800, or 1000 °C for 1 h. Crystalline Al2O3 was achieved after the 800 and 1000 °C heat treatments. The crystalline films showed apparent stability in SC-1 and HF solutions. However, ellipsometry and electron microscopy showed that a prolonged exposure (60 min) to SC-1 and HF had induced a decrease in the refractive index and nanocracks in the films annealed at 800 °C. The degradation mechanism of the unstable crystalline film and the microstructure of the film, fully stable in SC-1 and with minor reaction with HF, were studied with transmission electron microscopy. Although both crystallized films had the same alumina transition phase, the film annealed at 800 °C in N2, with a less developed microstructure such as embedded amorphous regions and an uneven interfacial reaction layer, deteriorates at the amorphous regions and at the substrate-film interface. On the contrary, the stable film annealed at 1000 °C in N2 had considerably less embedded amorphous regions and a uniform Al-O-Si interfacial layer.

Dataset Information

Improved Ferroelectric Performance of Mg-Doped LiNbO₃ Films by an Ideal Atomic Layer Deposited Al₂O₃ Tunnel Switch Layer.

Publications

Improved Ferroelectric Performance of Mg-Doped LiNbO<sub>3</sub> Films by an Ideal Atomic Layer Deposited Al<sub>2</sub>O<sub>3</sub> Tunnel Switch Layer.

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