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Giant nonvolatile resistive switching in a Mott oxide and ferroelectric hybrid.

ABSTRACT: Controlling the electronic properties of oxides that feature a metal-insulator transition (MIT) is a key requirement for developing a new class of electronics often referred to as "Mottronics." A simple, controllable method to switch the MIT properties in real time is needed for practical applications. Here we report a giant, nonvolatile resistive switching (?R/R > 1,000%) and strong modulation of the MIT temperature (?T_c > 30 K) in a voltage-actuated V₂O₃/PMN-PT [Pb(Mg,Nb)O₃-PbTiO₃] heterostructure. This resistive switching is an order of magnitude larger than ever encountered in any other similar systems. The control of the V₂O₃ electronic properties is achieved using the transfer of switchable ferroelastic strain from the PMN-PT substrate into the epitaxially grown V₂O₃ film. Strain can reversibly promote/hinder the structural phase transition in the V₂O₃, thus advancing/suppressing the associated MIT. The giant resistive switching and strong T_c modulation could enable practical implementations of voltage-controlled Mott devices and provide a platform for exploring fundamental electronic properties of V₂O₃.

SUBMITTER: Salev P

PROVIDER: S-EPMC6500152 | biostudies-literature | 2019 Apr

REPOSITORIES: biostudies-literature

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