Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed.

ABSTRACT: Fifty years after its discovery, the ovonic threshold switching (OTS) phenomenon, a unique nonlinear conductivity behavior observed in some chalcogenide glasses, has been recently the source of a real technological breakthrough in the field of data storage memories. This breakthrough was achieved because of the successful 3D integration of so-called OTS selector devices with innovative phase-change memories, both based on chalcogenide materials. This paves the way for storage class memories as well as neuromorphic circuits. We elucidate the mechanism behind OTS switching by new state-of-the-art materials using electrical, optical, and x-ray absorption experiments, as well as ab initio molecular dynamics simulations. The model explaining the switching mechanism occurring in amorphous OTS ma

SUBMITTER: Noe P 

PROVIDER: S-EPMC7048425 | biostudies-literature | 2020 Feb

REPOSITORIES: biostudies-literature