Tuning the Polarity of MoTe₂ FETs by Varying the Channel Thickness for Gas-Sensing Applications.

ABSTRACT: In this study, electrical characteristics of MoTe₂ field-effect transistors (FETs) are investigated as a function of channel thickness. The conductivity type in FETs, fabricated from exfoliated MoTe₂ crystals, switched from p-type to ambipolar to n-type conduction with increasing MoTe₂ channel thickness from 10.6 nm to 56.7 nm. This change in flake-thickness-dependent conducting behavior of MoTe₂ FETs can be attributed to modulation of the Schottky barrier height and related bandgap alignment. Change in polarity as a function of channel thickness variation is also used for ammonia (NH₃) sensing, which confirms the p- and n-type behavior of MoTe₂ devices.

SUBMITTER: Rani A 

PROVIDER: S-EPMC6603731 | biostudies-literature | 2019 Jun

REPOSITORIES: biostudies-literature