Superinjection of Holes in Homojunction Diodes Based on Wide-Bandgap Semiconductors.

ABSTRACT: Electrically driven light sources are essential in a wide range of applications, from indication and display technologies to high-speed data communication and quantum information processing. Wide-bandgap semiconductors promise to advance solid-state lighting by delivering novel light sources. However, electrical pumping of these devices is still a challenging problem. Many wide-bandgap semiconductor materials, such as SiC, GaN, AlN, ZnS, and Ga₂O₃, can be easily n-type doped, but their efficient p-type doping is extremely difficult. The lack of holes due to the high activation energy of acceptors greatly limits the performance and practical applicability of wide-bandgap semiconductor devices. Here, we study a novel effect which allows homojunction semiconductor device

SUBMITTER: Khramtsov IA 

PROVIDER: S-EPMC6631951 | biostudies-literature | 2019 Jun

REPOSITORIES: biostudies-literature