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Nonvolatile Memory Device Based on Copper Polyphthalocyanine Thin Films.

ABSTRACT: In this work, we report the fabrication of nonvolatile memory devices based on chemical vapor deposition-grown copper polyphthalocyanine (CuPPc) thin films. The high polymerization degree and crystallinity of the as-obtained films were confirmed by transmission electron microscopy, X-ray photoelectron spectroscopy, and UV-vis studies. It was found that the device with Au/CuPPc/indium tin oxide sandwich structure exhibits good nonvolatile memory performance with a large ON/OFF current ratio of 10³ and long retention time of 1.2 × 10³ s.

SUBMITTER: Guo X

PROVIDER: S-EPMC6648378 | biostudies-literature | 2019 Jun

REPOSITORIES: biostudies-literature

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Nonvolatile Memory Device Based on Copper Polyphthalocyanine Thin Films.

Guo Xianfei X Liu Jie J Cao Lili L Liang Qiu Q Lei Shengbin S

ACS omega 20190617 6

In this work, we report the fabrication of nonvolatile memory devices based on chemical vapor deposition-grown copper polyphthalocyanine (CuPPc) thin films. The high polymerization degree and crystallinity of the as-obtained films were confirmed by transmission electron microscopy, X-ray photoelectron spectroscopy, and UV-vis studies. It was found that the device with Au/CuPPc/indium tin oxide sandwich structure exhibits good nonvolatile memory performance with a large ON/OFF current ratio of 10 ...[more]

PMID: 31460136

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