Browse
Submit Data
Databases
API
Help

Dataset Information

27 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Nonvolatile multilevel data storage memory device from controlled ambipolar charge trapping mechanism.

ABSTRACT: The capability of storing multi-bit information is one of the most important challenges in memory technologies. An ambipolar polymer which intrinsically has the ability to transport electrons and holes as a semiconducting layer provides an opportunity for the charge trapping layer to trap both electrons and holes efficiently. Here, we achieved large memory window and distinct multilevel data storage by utilizing the phenomena of ambipolar charge trapping mechanism. As fabricated flexible memory devices display five well-defined data levels with good endurance and retention properties showing potential application in printed electronics.

SUBMITTER: Zhou Y

PROVIDER: S-EPMC3728587 | biostudies-literature | 2013

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Publications

Nonvolatile multilevel data storage memory device from controlled ambipolar charge trapping mechanism.

Zhou Ye Y Han Su-Ting ST Sonar Prashant P Roy V A L VA

Scientific reports 20130101

The capability of storing multi-bit information is one of the most important challenges in memory technologies. An ambipolar polymer which intrinsically has the ability to transport electrons and holes as a semiconducting layer provides an opportunity for the charge trapping layer to trap both electrons and holes efficiently. Here, we achieved large memory window and distinct multilevel data storage by utilizing the phenomena of ambipolar charge trapping mechanism. As fabricated flexible memory ...[more]

PMID: 23900459

Similar Datasets

4,5-Diazafluorene-Based Donor-Acceptor Small Molecules as Charge Trapping Elements for Tunable Nonvolatile Organic Transistor Memory.

Project description:Three diazafluorene derivatives triphenylamine (TPA)(PDAF) n (n = 1, 2, 3) serving as small molecular elements are designed and synthesized via concentrated sulfuric acid mediated Friedel-Crafts reaction. With highly nonplanar topological configuration, TPA(PDAF)3 shows weaker intermolecular interaction in the solid states and thus exhibits single nanomolecular behavior, which is crucial for charge stored and retained in an organic field-effect transistor (OFET) memory device. Furthermore, diazafluorene derivatives possess a completely separate highest occupied molecular orbital/lowest unoccupied molecular orbital, which offers ideal hole and electron trapping sites. As charge storage elements, triphenylamine groups provide the hole trapping sites, while diazafluorene units provide the electron trapping sites and act as a hole blocking group to restrain the leakage of stored holes trapped in triphenylamine. The pentacene-based OFET memory device with solution-processing TPA(PDAF)3 shows a good hole-trapping ability, high hole trapping density (4.55 × 1012 cm-2), fast trapping speed (<20 ms), a large memory window (89 V), and a tunable ambipolar memory behavior. The optimized device shows a large ON/OFF current ratio (2.85 × 107), good charge retention (>104 s), and reliable endurance properties. This study suggests that diazafluorene based donor-acceptor small molecular elements have great promise for high-performance OFET memory.

| S-EPMC6299726 | biostudies-literature

Direct Charge Trapping Multilevel Memory with Graphdiyne/MoS<sub>2</sub> Van der Waals Heterostructure.

Project description:Direct charge trapping memory, a new concept memory without any dielectric, has begun to attract attention. However, such memory is still at the incipient stage, of which the charge-trapping capability depends on localized electronic states that originated from the limited surface functional groups. To further advance such memory, a material with rich hybrid states is highly desired. Here, a van der Waals heterostructure design is proposed utilizing the 2D graphdiyne (GDY) which possesses abundant hybrid states with different chemical groups. In order to form the desirable van der Waals coupling, the plasma etching method is used to rapidly achieve the ultrathin 2D GDY with smooth surface for the first time. With the plasma-treated 2D GDY as charge-trapping layer, a direct charge-trapping memory based on GDY/MoS2 is constructed. This bilayer memory is featured with large memory window (90 V) and high degree of modulation (on/off ratio around 8 × 107 ). Two operating mode can be achieved and data storage capability of 9 and 10 current levels can be obtained, respectively, in electronic and opto-electronic mode. This GDY/MoS2 memory introduces a novel application of GDY as rich states charge-trapping center and offers a new strategy of realizing high performance dielectric-free electronics, such as optical memories and artificial synaptic.

| S-EPMC8564425 | biostudies-literature

Nonvolatile Memory Device Based on Copper Polyphthalocyanine Thin Films.

Project description:In this work, we report the fabrication of nonvolatile memory devices based on chemical vapor deposition-grown copper polyphthalocyanine (CuPPc) thin films. The high polymerization degree and crystallinity of the as-obtained films were confirmed by transmission electron microscopy, X-ray photoelectron spectroscopy, and UV-vis studies. It was found that the device with Au/CuPPc/indium tin oxide sandwich structure exhibits good nonvolatile memory performance with a large ON/OFF current ratio of 103 and long retention time of 1.2 × 103 s.

| S-EPMC6648378 | biostudies-literature

A wearable multiplexed silicon nonvolatile memory array using nanocrystal charge confinement.

Project description:Strategies for efficient charge confinement in nanocrystal floating gates to realize high-performance memory devices have been investigated intensively. However, few studies have reported nanoscale experimental validations of charge confinement in closely packed uniform nanocrystals and related device performance characterization. Furthermore, the system-level integration of the resulting devices with wearable silicon electronics has not yet been realized. We introduce a wearable, fully multiplexed silicon nonvolatile memory array with nanocrystal floating gates. The nanocrystal monolayer is assembled over a large area using the Langmuir-Blodgett method. Efficient particle-level charge confinement is verified with the modified atomic force microscopy technique. Uniform nanocrystal charge traps evidently improve the memory window margin and retention performance. Furthermore, the multiplexing of memory devices in conjunction with the amplification of sensor signals based on ultrathin silicon nanomembrane circuits in stretchable layouts enables wearable healthcare applications such as long-term data storage of monitored heart rates.

| S-EPMC4705037 | biostudies-literature

High-Performance Nonvolatile Organic Field-Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers.

Project description:Nonvolatile organic field-effect transistor (OFET) memory devices based on pentacene/N,N'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13)/pentacene trilayer organic heterostructures have been proposed. The discontinuous n-type P13 embedded in p-type pentacene layers can not only provide electrons in the semiconductor layer that facilitates electron trapping process; it also works as charge trapping sites, which is attributed to the quantum well-like pentacene/P13/pentacene organic heterostructures. The synergistic effects of charge trapping in the discontinuous P13 and the charge-trapping property of the poly(4-vinylphenol) (PVP) layer remarkably improve the memory performance. In addition, the trilayer organic heterostructures have also been successfully applied to multilevel and flexible nonvolatile memory devices. The results provide a novel design strategy to achieve high-performance nonvolatile OFET memory devices and allow potential applications for different combinations of various organic semiconductor materials in OFET memory.

| S-EPMC5566232 | biostudies-literature

Ambipolar Charge Storage in Type-I Core/Shell Semiconductor Quantum Dots toward Optoelectronic Transistor-Based Memories.

Project description:Efficient charge storage media play a pivotal role in transistor-based memories and thus are under intense research. In this work, the charge storage ability of type-I InP/ZnS core/shell quantum dots is well revealed through studying a pentacene-based organic transistor with the quantum dots (QDs) integrated. The quantum well-like energy band structure enables the QDs to directly confine either holes or electrons in the core, signifying a dielectric layer-free nonvolatile memory. Especially, the QDs in this device can be charged by electrons using light illumination as the exclusive method. The electron charging process is ascribed to the photoexcitation process in the InP-core and the hot holes induced. The QDs layer demonstrates an electron storage density of ≈5.0 × 1011 cm-2 and a hole storage density of ≈6.4 × 1011 cm-2 . Resultingly, the output device shows a fast response speed to gate voltage (10 µs), large memory window (42 V), good retention (>4.0 × 104 s), and reliable endurance. This work suggests that the core/shell quantum dot as a kind of charge storage medium is of great promise for optoelectronic memories.

| S-EPMC8373160 | biostudies-literature

Photo-reactive charge trapping memory based on lanthanide complex.

Project description:Traditional utilization of photo-induced excitons is popularly but restricted in the fields of photovoltaic devices as well as photodetectors, and efforts on broadening its function have always been attempted. However, rare reports are available on organic field effect transistor (OFET) memory employing photo-induced charges. Here, we demonstrate an OFET memory containing a novel organic lanthanide complex Eu(tta)3ppta (Eu(tta)3?=?Europium(III) thenoyltrifluoroacetonate, ppta?=?2-phenyl-4,6-bis(pyrazol-1-yl)-1,3,5-triazine), in which the photo-induced charges can be successfully trapped and detrapped. The luminescent complex emits intense red emission upon ultraviolet (UV) light excitation and serves as a trapping element of holes injected from the pentacene semiconductor layer. Memory window can be significantly enlarged by light-assisted programming and erasing procedures, during which the photo-induced excitons in the semiconductor layer are separated by voltage bias. The enhancement of memory window is attributed to the increasing number of photo-induced excitons by the UV light. The charges are stored in this luminescent complex for at least 10(4)?s after withdrawing voltage bias. The present study on photo-assisted novel memory may motivate the research on a new type of light tunable charge trapping photo-reactive memory devices.

| S-EPMC4598868 | biostudies-other

Resistive switching behavior of reduced graphene oxide memory cells for low power nonvolatile device application.

Project description:Graphene Oxide (GO) based low cost flexible electronics and memory cell have recently attracted more attention for the fabrication of emerging electronic devices. As a suitable candidate for resistive random access memory technology, reduced graphene oxide (RGO) can be widely used for non-volatile switching memory applications because of its large surface area, excellent scalability, retention, and endurance properties. We demonstrated that the fabricated metal/RGO/metal memory device exhibited excellent switching characteristics, with on/off ratio of two orders of magnitude and operated threshold switching voltage of less than 1 V. The studies on different cell diameter, thickness, scan voltages and period of time corroborate the reliability of the device as resistive random access memory. The microscopic origin of switching operation is governed by the establishment of conducting filaments due to the interface amorphous layer rupturing and the movement of oxygen in the GO layer. This interesting experimental finding indicates that device made up of thermally reduced GO shows more reliability for its use in next generation electronics devices.

| S-EPMC4886213 | biostudies-literature

Trapping Charge Mechanism in Hv1 Channels (<i>Ci</i>Hv1).

Project description:The majority of voltage-gated ion channels contain a defined voltage-sensing domain and a pore domain composed of highly conserved amino acid residues that confer electrical excitability via electromechanical coupling. In this sense, the voltage-gated proton channel (Hv1) is a unique protein in that voltage-sensing, proton permeation and pH-dependent modulation involve the same structural region. In fact, these processes synergistically work in concert, and it is difficult to separate them. To investigate the process of Hv1 voltage sensor trapping, we follow voltage-sensor movements directly by leveraging mutations that enable the measurement of Hv1 channel gating currents. We uncover that the process of voltage sensor displacement is due to two driving forces. The first reveals that mutations in the selectivity filter (D160) located in the S1 transmembrane interact with the voltage sensor. More hydrophobic amino acids increase the energy barrier for voltage sensor activation. On the other hand, the effect of positive charges near position 264 promotes the formation of salt bridges between the arginines of the voltage sensor domain, achieving a stable conformation over time. Our results suggest that the activation of the Hv1 voltage sensor is governed by electrostatic-hydrophobic interactions, and S4 arginines, N264 and selectivity filter (D160) are essential in the Ciona-Hv1 to understand the trapping of the voltage sensor.

| S-EPMC10779229 | biostudies-literature

Nonvolatile ferroelectric domain wall memory.

Project description:Ferroelectric domain walls are atomically sharp topological defects that separate regions of uniform polarization. The discovery of electrical conductivity in specific types of walls gave rise to "domain wall nanoelectronics," a technology in which the wall (rather than the domain) stores information. This paradigm shift critically hinges on precise nanoengineering of reconfigurable domain walls. Using specially designed nanofabricated electrodes and scanning probe techniques, we demonstrate a prototype nonvolatile ferroelectric domain wall memory, scalable to below 100 nm, whose binary state is defined by the existence or absence of conductive walls. The device can be read out nondestructively at moderate voltages (<3 V), exhibits relatively high OFF-ON ratios (~103) with excellent endurance and retention characteristics, and has multilevel data storage capacity. Our work thus constitutes an important step toward integrated nanoscale ferroelectric domain wall memory devices.

| S-EPMC5482552 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data