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Field-Dependent Heat Dissipation of Carbon Nanotube Electric Currents.

ABSTRACT: We study heat dissipation of a multi-wall carbon nanotube (MWCNT) device fabricated from two crossed nanotubes on a SiN_x substrate under the influence of a constant (DC) electric bias. By monitoring the temperature of the substrate, we observe negligible Joule heating within the nanotube lattice itself and instead heating occurs in the insulating substrate directly via a remote-scattering heating effect. Using finite element analysis, we estimate a remote heating parameter, ?, as the ratio of the power dissipated directly in the substrate to the total power applied. The extracted parameters show two distinct bias ranges; a low bias regime where about 85% of the power is dissipated directly into the substrate and a high bias regime where ? decreases, indicating the onset of traditional Joule heating within the nanotube. Analysis shows that this reduction is consistent with enhanced scattering of charge carriers by optical phonons within the nanotube. The results provide insights into heat dissipation mechanisms of Joule heated nanotube devices that are more complex than a simple heat dissipation mechanism dominated by acoustic phonons, which opens new possibilities for engineering nanoelectronics with improved thermal management.

SUBMITTER: Voskanian N

PROVIDER: S-EPMC6658496 | biostudies-literature | 2019 Jul

REPOSITORIES: biostudies-literature

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Field-Dependent Heat Dissipation of Carbon Nanotube Electric Currents.

Voskanian Norvik N Olsson Eva E Cumings John J

Scientific reports 20190725 1

We study heat dissipation of a multi-wall carbon nanotube (MWCNT) device fabricated from two crossed nanotubes on a SiN<sub>x</sub> substrate under the influence of a constant (DC) electric bias. By monitoring the temperature of the substrate, we observe negligible Joule heating within the nanotube lattice itself and instead heating occurs in the insulating substrate directly via a remote-scattering heating effect. Using finite element analysis, we estimate a remote heating parameter, β, as the ...[more]

PMID: 31346190

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Project description:Semiconducting single-walled carbon nanotubes (s-SWCNTs) are considered as a replacement for silicon in field-effect transistors (FETs), solar cells, logic circuits, and so forth, because of their outstanding electronic, optical, and mechanical properties. Herein, we have studied the reaction of pristine SWCNTs dispersed in a pluronic F-68 (PF-68) polymer solution with para-amino diphenylamine diazonium sulfate (PADDS) to separate nanotubes based on their metallicity. The preferential selectivity of the reactions was monitored by changes in the semiconducting (S22 and S33) and metallic (M11) bands by ultraviolet-visible-near infrared spectroscopy. Metallic selectivity depended on the concentrations of PADDS, reaction time, and the solution pH. Furthermore, separation of pure s-SWCNTs was confirmed by Raman spectroscopy and Fourier-transform infrared spectroscopy. After the removal of metallic SWCNTs, direct current electric field was applied to the pure s-SWCNT solution, which effectively directed the nanotubes to align in one direction as nanotube arrays with a longer length and high density. After that, electrically aligned s-SWCNT solution was cast on a silicon substrate, and the length of the nanotube arrays was measured as ∼2 to ∼14 μm with an areal density of ∼2 to ∼20 tubes/μm of s-SWCNTs. Next, electrically aligned s-SWCNT arrays were deposited on the channel of the FET device by drop-casting. Field-emission scanning electron microscopy and electrical measurements have been carried out to test the performance of the aligned s-SWCNTs/FETs. The fabricated FETs with a channel length of 10 μm showed stable electrical properties with a field-effect mobility of 30.4 cm2/Vs and a log10 (I on/I off) current ratio of 3.96. We envisage that this new chemical-based separation method and electric field-assisted alignment could be useful to obtain a high-purity and aligned s-SWCNT array network for the fabrication of high-performance FETs to use in digital and analog electronics.

Dataset Information

Field-Dependent Heat Dissipation of Carbon Nanotube Electric Currents.

Publications

Field-Dependent Heat Dissipation of Carbon Nanotube Electric Currents.

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