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Enhancement in Photoelectrochemical Performance of Optimized Amorphous SnS₂ Thin Film Fabricated through Atomic Layer Deposition.

ABSTRACT: Two-dimensional (2D) nanomaterials have distinct optical and electrical properties owing to their unique structures. In this study, smooth 2D amorphous tin disulfide (SnS₂) films were fabricated by atomic layer deposition (ALD), and applied for the first time to photoelectrochemical water splitting. The optimal stable photocurrent density of the 50-nm-thick amorphous SnS₂ film fabricated at 140 °C was 51.5 µA/cm² at an oxygen evolution reaction (0.8 V vs. saturated calomel electrode (SCE)). This value is better than those of most polycrystalline SnS₂ films reported in recent years. These results are attributed mainly to adjustable optical band gap in the range of 2.80 to 2.52 eV, precise control of the film thickness at the nanoscale, and the close contact between the prepared SnS₂ film and substrate. Subsequently, the photoelectron separation mechanisms of the amorphous, monocrystalline, and polycrystalline SnS₂ films are discussed. Considering above advantages, the ALD amorphous SnS₂ film can be designed and fabricated according to the application requirements.

SUBMITTER: Hu W

PROVIDER: S-EPMC6723338 | biostudies-literature | 2019 Jul

REPOSITORIES: biostudies-literature

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Enhancement in Photoelectrochemical Performance of Optimized Amorphous SnS2 Thin Film Fabricated through Atomic Layer Deposition.

Hu Weiguang W Hien Truong Thi TT Kim Dojin D Chang Hyo Sik HS

Nanomaterials (Basel, Switzerland) 20190728 8

Two-dimensional (2D) nanomaterials have distinct optical and electrical properties owing to their unique structures. In this study, smooth 2D amorphous tin disulfide (SnS2) films were fabricated by atomic layer deposition (ALD), and applied for the first time to photoelectrochemical water splitting. The optimal stable photocurrent density of the 50-nm-thick amorphous SnS2 film fabricated at 140 °C was 51.5 µA/cm2 at an oxygen evolution reaction (0.8 V vs. saturat ...[more]

PMID: 31357724

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Project description:Over the years, vanadium dioxide, (VO2(M1)), has been extensively utilised to fabricate thermochromic thin films with the focus on using external stimuli, such as heat, to modulate the visible through near-infrared transmittance for energy efficiency of buildings and indoor comfort. It is thus valuable to extend the study of thermochromic materials into the mid-infrared (MIR) wavelengths for applications such as smart radiative devices. On top of this, there are numerous challenges with synthesising pure VO2 (M1) thin films, as most fabrication techniques require the post-annealing of a deposited thin film to convert amorphous VO2 into a crystalline phase. Here, we present a direct method to fabricate thicker VO2(M1) thin films onto hot silica substrates (at substrate temperatures of 400 °C and 700 °C) from vanadium pentoxide (V2O5) precursor material. A high repetition rate (10 kHz) femtosecond laser is used to deposit the V2O5 leading to the formation of VO2 (M1) without any post-annealing steps. Surface morphology, structural properties, and UV-visible optical properties, including optical band gap and complex refractive index, as a function of the substrate temperature, were studied and reported below. The transmission electron microscopic (TEM) and X-ray diffraction studies confirm that VO2 (M1) thin films deposited at 700 °C are dominated by a highly texturized polycrystalline monoclinic crystalline structure. The thermochromic characteristics in the mid-infrared (MIR) at a wavelength range of 2.5-5.0 μm are presented using temperature-dependent transmittance measurements. The first-order phase transition from metal-to-semiconductor and the hysteresis bandwidth of the transition were confirmed to be 64.4 °C and 12.6 °C respectively, for a sample fabricated at 700 °C. Thermo-optical emissivity properties indicate that these VO2 (M1) thin films fabricated with femtosecond laser deposition have strong potential for both radiative thermal management or control via active energy-saving windows for buildings, and satellites and spacecraft.

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Enhancement in Photoelectrochemical Performance of Optimized Amorphous SnS₂ Thin Film Fabricated through Atomic Layer Deposition.

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Enhancement in Photoelectrochemical Performance of Optimized Amorphous SnS<sub>2</sub> Thin Film Fabricated through Atomic Layer Deposition.

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