Dataset Information

Diversity of TiO₂: Controlling the Molecular and Electronic Structure of Atomic-Layer-Deposited Black TiO₂.

ABSTRACT: Visually black, electrically leaky, amorphous titania (am-TiO₂) thin films were grown by atomic layer deposition (ALD) for photocatalytic applications. Broad spectral absorbance in the visible range and exceptional conductivity are attributed to trapped Ti³⁺ in the film. Oxidation of Ti³⁺ upon heat treatment leads to a drop in conductivity, a color change from black to white, and crystallization of am-TiO₂. ALD-grown black TiO₂, without any heat treatment, is subject to dissolution in alkaline photoelectrochemical conditions. The best photocatalytic activity for solar water splitting is obtained for completely crystalline white TiO₂.

SUBMITTER: Ali-Loytty H

PROVIDER: S-EPMC6727370 | biostudies-literature | 2019 Jan

REPOSITORIES: biostudies-literature

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Publications

Diversity of TiO2: Controlling the Molecular and Electronic Structure of Atomic-Layer-Deposited Black TiO2.

Ali-Löytty Harri H Hannula Markku M Saari Jesse J Palmolahti Lauri L Bhuskute Bela D BD Ulkuniemi Riina R Nyyssönen Tuomo T Lahtonen Kimmo K Valden Mika M

ACS applied materials & interfaces 20190108 3

Visually black, electrically leaky, amorphous titania (am-TiO2) thin films were grown by atomic layer deposition (ALD) for photocatalytic applications. Broad spectral absorbance in the visible range and exceptional conductivity are attributed to trapped Ti3+ in the film. Oxidation of Ti3+ upon heat treatment leads to a drop in conductivity, a color change from black to white, and crystallization of am-TiO2. ALD-grown black TiO2, without any ...[more]

PMID: 30608653

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Project description:Atomic-layer-deposited alumina (ALD Al2O3) can be utilized for passivation, structural, and functional purposes in electronics. In all cases, the deposited film is usually expected to maintain chemical stability over the lifetime of the device or during processing. However, as-deposited ALD Al2O3 is typically amorphous with poor resistance to chemical attack by aggressive solutions employed in electronics manufacturing. Therefore, such films may not be suitable for further processing as solvent treatments could weaken the protective barrier properties of the film or dissolved material could contaminate the solvent baths, which can cause cross-contamination of a production line used to manufacture different products. On the contrary, heat-treated, crystalline ALD Al2O3 has shown resistance to deterioration in solutions, such as standard clean (SC) 1 and 2. In this study, ALD Al2O3 was deposited from four different precursor combinations and subsequently annealed either at 600, 800, or 1000 °C for 1 h. Crystalline Al2O3 was achieved after the 800 and 1000 °C heat treatments. The crystalline films showed apparent stability in SC-1 and HF solutions. However, ellipsometry and electron microscopy showed that a prolonged exposure (60 min) to SC-1 and HF had induced a decrease in the refractive index and nanocracks in the films annealed at 800 °C. The degradation mechanism of the unstable crystalline film and the microstructure of the film, fully stable in SC-1 and with minor reaction with HF, were studied with transmission electron microscopy. Although both crystallized films had the same alumina transition phase, the film annealed at 800 °C in N2, with a less developed microstructure such as embedded amorphous regions and an uneven interfacial reaction layer, deteriorates at the amorphous regions and at the substrate-film interface. On the contrary, the stable film annealed at 1000 °C in N2 had considerably less embedded amorphous regions and a uniform Al-O-Si interfacial layer.

Dataset Information

Diversity of TiO₂: Controlling the Molecular and Electronic Structure of Atomic-Layer-Deposited Black TiO₂.

Publications

Diversity of TiO<sub>2</sub>: Controlling the Molecular and Electronic Structure of Atomic-Layer-Deposited Black TiO<sub>2</sub>.

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