Realizing High Thermoelectric Performance at Ambient Temperature by Ternary Alloying in Polycrystalline Si_1-x-yGe_xSn_y Thin Films with Boron Ion Implantation.

ABSTRACT: The interest in thermoelectrics (TE) for an electrical output power by converting any kind of heat has flourished in recent years, but questions about the efficiency at the ambient temperature and safety remain unanswered. With the possibility of integration in the technology of semiconductors based on silicon, highly harvested power density, abundant on earth, nontoxicity, and cost-efficiency, Si_1-x-yGe_xSn_y ternary alloy film has been investigated to highlight its efficiency through ion implantation and high-temperature rapid thermal annealing (RTA) process. Significant improvement of the ambient-temperature TE performance has been achieved in a boron-implanted Si_0.864Ge_0.108Sn_0.028 thin film after a short time RTA process at 1100?°C for 15?seconds, the power factor achieves to 11.3 ?Wcm^-1 K^-2 at room temperature. The introduction of Sn into Si_1-xGe_x dose not only significantly improve the conductivity of Si_1-xGe_x thermoelectric materials but also achieves a relatively high Seebeck coefficient at room temperature. This work manifests emerging opportunities for modulation Si integration thermoelectrics as wearable devices charger by body temperature.

SUBMITTER: Peng Y 

PROVIDER: S-EPMC6778188 | biostudies-literature | 2019 Oct

REPOSITORIES: biostudies-literature