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Realizing high-ranged thermoelectric performance in PbSnS2 crystals.

ABSTRACT: Great progress has been achieved in p-type SnS thermoelectric compound recently, while the stagnation of the n-type counterpart hinders the construction of thermoelectric devices. Herein, n-type sulfide PbSnS2 with isostructural to SnS is obtained through Pb alloying and achieves a maximum ZT of ~1.2 and an average ZT of ~0.75 within 300-773 K, which originates from enhanced power factor and intrinsically ultralow thermal conductivity. Combining the optimized carrier concentration by Cl doping and enlarged Seebeck coefficient through activating multiple conduction bands evolutions with temperature, favorable power factors are maintained. Besides, the electron doping stabilizes the phase of PbSnS2 and the complex-crystal-structure induced strong anharmonicity results in ultralow lattice thermal conductivity. Moreover, a maximum power generation efficiency of ~2.7% can be acquired in a single-leg device. Our study develops a n-type sulfide PbSnS2 with high performance, which is a potential candidate to match the excellent p-type SnS.

SUBMITTER: Zhan S 

PROVIDER: S-EPMC9547848 | biostudies-literature | 2022 Oct

REPOSITORIES: biostudies-literature

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Realizing high-ranged thermoelectric performance in PbSnS<sub>2</sub> crystals.

Zhan Shaoping S   Hong Tao T   Qin Bingchao B   Zhu Yingcai Y   Feng Xiang X   Su Lizhong L   Shi Haonan H   Liang Hao H   Zhang Qianfan Q   Gao Xiang X   Ge Zhen-Hua ZH   Zheng Lei L   Wang Dongyang D   Zhao Li-Dong LD  

Nature communications 20221008 1

Great progress has been achieved in p-type SnS thermoelectric compound recently, while the stagnation of the n-type counterpart hinders the construction of thermoelectric devices. Herein, n-type sulfide PbSnS<sub>2</sub> with isostructural to SnS is obtained through Pb alloying and achieves a maximum ZT of ~1.2 and an average ZT of ~0.75 within 300-773 K, which originates from enhanced power factor and intrinsically ultralow thermal conductivity. Combining the optimized carrier concentration by  ...[more]

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