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Characterizing temperature-dependent optical properties of (MA0.13FA0.87) PbI3 single crystals using spectroscopic ellipsometry.


ABSTRACT: In this paper, we present spectroscopic ellipsometry measurements of (MA0.13FA0.87)PbI3 single crystals assessed at photon energies of 0.73-6.42?eV and at temperatures between 4.4 and 400?K. At room temperature, the refractive index was dispersed as a function of frequency, which is typical of a semiconductor. The absorption spectrum exhibited several electronic transitions. We estimated a room temperature direct band gap of 1.66?±?0.02?eV and exciton binding energy of 40?meV. With decreasing temperature, the refractive index increased. The room-temperature thermo-optic coefficients were -1.7?×?10-4 and -2.5?×?10-4?K-1 at wavelength of 600 and 1200?nm. The exciton peak position and bandgap energy exhibited a redshift, which was attributed to a reverse ordering of the band structures. Additionally, an anomaly in exciton peak position and bandgap occurred at approximately 100-200?K due to the structural phase transition. This phenomenon was associated with the coexistence of MA/FA-disordered and MA/FA-ordered domains. Our results provide a foundation for the technological development of lead halide perovskites-based photonic devices at various temperatures.

SUBMITTER: Chen HW 

PROVIDER: S-EPMC6890668 | biostudies-literature | 2019 Dec

REPOSITORIES: biostudies-literature

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Characterizing temperature-dependent optical properties of (MA<sub>0.13</sub>FA<sub>0.87</sub>) PbI<sub>3</sub> single crystals using spectroscopic ellipsometry.

Chen Hsiao-Wen HW   Gulo Desman Perdamaian DP   Chao Yu-Chiang YC   Liu Hsiang-Lin HL  

Scientific reports 20191203 1


In this paper, we present spectroscopic ellipsometry measurements of (MA<sub>0.13</sub>FA<sub>0.87</sub>)PbI<sub>3</sub> single crystals assessed at photon energies of 0.73-6.42 eV and at temperatures between 4.4 and 400 K. At room temperature, the refractive index was dispersed as a function of frequency, which is typical of a semiconductor. The absorption spectrum exhibited several electronic transitions. We estimated a room temperature direct band gap of 1.66 ± 0.02 eV and exciton binding ene  ...[more]

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