Light-Driven WSe₂-ZnO Junction Field-Effect Transistors for High-Performance Photodetection.

ABSTRACT: Assembling nanomaterials into hybrid structures provides a promising and flexible route to reach ultrahigh responsivity by introducing a trap-assisted gain (G) mechanism. However, the high-gain photodetectors benefitting from long carrier lifetime often possess slow response time (t) due to the inherent G-t tradeoff. Here, a light-driven junction field-effect transistor (LJFET), consisting of an n-type ZnO belt as the channel material and a p-type WSe₂ nanosheet as a photoactive gate material, to break the G-t tradeoff through decoupling the gain from carrier lifetime is reported. The photoactive gate material WSe₂ under illumination enables a conductive path for externally applied voltage, which modulates the depletion region

SUBMITTER: Guo N 

PROVIDER: S-EPMC6947501 | biostudies-literature | 2020 Jan

REPOSITORIES: biostudies-literature