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Highly Enhanced Visible-Light-Driven Photoelectrochemical Performance of ZnO-Modified In₂S₃ Nanosheet Arrays by Atomic Layer Deposition.

ABSTRACT: Photoanodes based on In₂S₃/ZnO heterojunction nanosheet arrays (NSAs) have been fabricated by atomic layer deposition of ZnO over In₂S₃ NSAs, which were in situ grown on fluorine-doped tin oxide glasses via a facile solvothermal process. The as-prepared photoanodes show dramatically enhanced performance for photoelectrochemical (PEC) water splitting, compared to single semiconductor counterparts. The optical and PEC properties of In₂S₃/ZnO NSAs have been optimized by modulating the thickness of the ZnO overlayer. After pairing with ZnO, the NSAs exhibit a broadened absorption range and an increased light absorptance over a wide wavelength region of 250-850 nm. The optimized sample of In₂S₃/ZnO-50 NSAs shows a photocurrent density of 1.642 mA cm^-2 (1.5 V vs. RHE) and an incident photon-to-current efficiency of 27.64% at 380 nm (1.23 V vs. RHE), which are 70 and 116 times higher than those of the pristine In₂S₃ NSAs, respectively. A detailed energy band edge analysis reveals the type-II band alignment of the In₂S₃/ZnO heterojunction, which enables efficient separation and collection of photogenerated carriers, especially with the assistance of positive bias potential, and then results in the significantly increased PEC activity.

SUBMITTER: Li M

PROVIDER: S-EPMC6199096 | biostudies-literature |

REPOSITORIES: biostudies-literature

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