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Reactant friendly hydrogen evolution interface based on di-anionic MoS2 surface.


ABSTRACT: Engineering the reaction interface to preferentially attract reactants to inner Helmholtz plane is highly desirable for kinetic advancement of most electro-catalysis processes, including hydrogen evolution reaction (HER). This, however, has rarely been achieved due to the inherent complexity for precise surface manipulation down to molecule level. Here, we build a MoS2 di-anionic surface with controlled molecular substitution of S sites by -OH. We confirm the -OH group endows the interface with reactant dragging functionality, through forming strong non-covalent hydrogen bonding to the reactants (hydronium ions or water). The well-conditioned surface, in conjunction with activated sulfur atoms (by heteroatom metal doping) as active sites, giving rise to up-to-date the lowest over potential and highest intrinsic activity among all the MoS2 based catalysts. The di-anion surface created in this study, with atomic mixing of active sites and reactant dragging functionalities, represents a effective di-functional interface for boosted kinetic performance.

SUBMITTER: Luo Z 

PROVIDER: S-EPMC7048837 | biostudies-literature | 2020 Feb

REPOSITORIES: biostudies-literature

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Reactant friendly hydrogen evolution interface based on di-anionic MoS<sub>2</sub> surface.

Luo Zhaoyan Z   Zhang Hao H   Yang Yuqi Y   Wang Xian X   Li Yang Y   Jin Zhao Z   Jiang Zheng Z   Liu Changpeng C   Xing Wei W   Ge Junjie J  

Nature communications 20200228 1


Engineering the reaction interface to preferentially attract reactants to inner Helmholtz plane is highly desirable for kinetic advancement of most electro-catalysis processes, including hydrogen evolution reaction (HER). This, however, has rarely been achieved due to the inherent complexity for precise surface manipulation down to molecule level. Here, we build a MoS<sub>2</sub> di-anionic surface with controlled molecular substitution of S sites by -OH. We confirm the -OH group endows the inte  ...[more]

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