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Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrays.

ABSTRACT: Selective area thermal etching (SATE) of gallium nitride is a simple subtractive process for creating novel device architectures and improving the structural and optical quality of III-nitride-based devices. In contrast to plasma etching, it allows, for example, the creation of enclosed features with extremely high aspect ratios without introducing ion-related etch damage. We report how SATE can create uniform and organized GaN nanohole arrays from c-plane and (11-22) semi-polar GaN in a conventional MOVPE reactor. The morphology, etching anisotropy and etch depth of the nanoholes were investigated by scanning electron microscopy for a broad range of etching parameters, including the temperature, the pressure, the NH₃ flow rate and the carrier gas mixture. The supply of NH₃ during SATE plays a crucial role in obtaining a highly anisotropic thermal etching process with the formation of hexagonal non-polar-faceted nanoholes. Changing other parameters affects the formation, or not, of non-polar sidewalls, the uniformity of the nanohole diameter, and the etch rate, which reaches 6?µm per hour. Finally, the paper discusses the SATE mechanism within a MOVPE environment, which can be applied to other mask configurations, such as dots, rings or lines, along with other crystallographic orientations.

SUBMITTER: Coulon PM

PROVIDER: S-EPMC7101372 | biostudies-literature | 2020 Mar

REPOSITORIES: biostudies-literature

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Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrays.

Coulon Pierre-Marie PM Feng Peng P Damilano Benjamin B Vézian Stéphane S Wang Tao T Shields Philip A PA

Scientific reports 20200327 1

Selective area thermal etching (SATE) of gallium nitride is a simple subtractive process for creating novel device architectures and improving the structural and optical quality of III-nitride-based devices. In contrast to plasma etching, it allows, for example, the creation of enclosed features with extremely high aspect ratios without introducing ion-related etch damage. We report how SATE can create uniform and organized GaN nanohole arrays from c-plane and (11-22) semi-polar GaN in a convent ...[more]

PMID: 32221397

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Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrays.

Publications

Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrays.

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