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Atomic force microscopy data of novel high-k hydrocarbon films synthesized on Si wafers for gate dielectric applications.


ABSTRACT: This article presents data obtained from the atomic force microscopy (AFM) images of ultrathin high-k hydrocarbon (HC) films. The high-k HC films were synthesized on Si(100) wafers at various growth temperatures by using inductively-coupled plasma chemical vapor deposition with CH4 gas and a gas mixture consisting of 10% H2 and 90% Ar. The AFM images were obtained by tapping mode. The AFM results provide the surface topography, roughness, and thickness of the HC films as a function of growth temperature, which are essential data for high-k gate dielectrics of metal-insulator-semiconductor device applications. This data article is related to the article entitled, "Novel high-k gate dielectric properties of ultrathin hydrocarbon films for next-generation metal-insulator-semiconductor devices" (Kim et al., 2020) [1].

SUBMITTER: Kwon J 

PROVIDER: S-EPMC7206205 | biostudies-literature | 2020 Jun

REPOSITORIES: biostudies-literature

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Atomic force microscopy data of novel high-<i>k</i> hydrocarbon films synthesized on Si wafers for gate dielectric applications.

Kwon Jihwan J   Kim Dong-Ok DO   Lee Sangyeob S   Kim Eui-Tae ET  

Data in brief 20200430


This article presents data obtained from the atomic force microscopy (AFM) images of ultrathin high-<i>k</i> hydrocarbon (HC) films. The high-<i>k</i> HC films were synthesized on Si(100) wafers at various growth temperatures by using inductively-coupled plasma chemical vapor deposition with CH<sub>4</sub> gas and a gas mixture consisting of 10% H<sub>2</sub> and 90% Ar. The AFM images were obtained by tapping mode. The AFM results provide the surface topography, roughness, and thickness of the  ...[more]

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