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Solution-processed amorphous ZrO₂ gate dielectric films synthesized by a non-hydrolytic sol-gel route.

ABSTRACT: Solution-processed zirconium oxide (ZrO₂) dielectrics were formed via a non-hydrolytic sol-gel route at low-temperature, and are suitable for flexible thin film transistor (TFT) devices. Precursor solutions with equimolar zirconium halide and zirconium alkoxide were prepared, and amorphous ZrO₂ films were obtained by spin-coating and annealing at 300 °C through the direct condensation reaction between them. The ZrO₂ films exhibited a high dielectric constant near 10, and a low leakage current density of 5 × 10^-8 A cm^-2 at a field of 1 MV cm^-1. High mobility p-type pentacene TFTs were fabricated using the ZrO₂ dielectrics, with a saturation field-effect mobility of 3.7 cm² V^-1 s^-1, a threshold voltage of -2.7 V, an on/off ratio of 1.1 × 10⁶ and a subthreshold swing of 0.65 V dec^-1.

SUBMITTER: Seon JB

PROVIDER: S-EPMC9090666 | biostudies-literature | 2018 Nov

REPOSITORIES: biostudies-literature

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Solution-processed amorphous ZrO2 gate dielectric films synthesized by a non-hydrolytic sol-gel route.

Seon Jong-Baek JB Cho Nam-Kwang NK Yoo Gayeong G Kim Youn Sang YS Char Kookheon K

RSC advances 20181122 68

Solution-processed zirconium oxide (ZrO2) dielectrics were formed via a non-hydrolytic sol-gel route at low-temperature, and are suitable for flexible thin film transistor (TFT) devices. Precursor solutions with equimolar zirconium halide and zirconium alkoxide were prepared, and amorphous ZrO2 films were obtained by spin-coating and annealing at 300 °C through the direct condensation reaction between them. The ZrO2 films exhibited a high dielectric consta ...[more]

PMID: 35558330

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