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Multilevel Resistive Switching Memory Based on a CH3NH3PbI 3-xClx Film with Potassium Chloride Additives.

ABSTRACT: High-quality CH3NH3PbI 3-xClx (MAPIC) films were prepared using potassium chloride (KCl) as an additive on indium tin oxide (ITO)-coated glass substrates using a simple one-step and low-temperature solution reaction. The Au/KCl-MAPIC/ITO/glass devices exhibited obvious multilevel resistive switching behavior, moderate endurance, and good retention performance. Electrical conduction analysis indicated that the resistive switching behavior of the KCl-doped MAPIC films was primarily attributed to the trap-controlled space-charge-limited current conduction that was caused by the iodine vacancies in the films. Moreover, the modulations of the barrier in the Au/KCl-MAPIC interface under bias voltages were thought to be responsible for the resistive switching in the carrier injection trapping/detrapping process.

SUBMITTER: Lv F

PROVIDER: S-EPMC7275113 | biostudies-literature | 2020 Jun

REPOSITORIES: biostudies-literature

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Multilevel Resistive Switching Memory Based on a CH3NH3PbI 3-xClx Film with Potassium Chloride Additives.

Lv Fengzhen F Ling Kang K Zhong Tingting T Liu Fuchi F Liang Xiaoguang X Zhu Changming C Liu Jun J Kong Wenjie W

Nanoscale research letters 20200605 1

High-quality CH3NH3PbI 3-xClx (MAPIC) films were prepared using potassium chloride (KCl) as an additive on indium tin oxide (ITO)-coated glass substrates using a simple one-step and low-temperature solution reaction. The Au/KCl-MAPIC/ITO/glass devices exhibited obvious multilevel resistive switching behavior, moderate endurance, and good retention performance. Electrical conduction analysis indicated that the resistive switching behavior of the KCl-dop ...[more]

PMID: 32504244

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