Browse
Submit Data
Databases
API
Help

Dataset Information

35 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Reversible switching mode change in Ta₂O₅-based resistive switching memory (ReRAM).

ABSTRACT: We report the complementary resistive switching (CRS) behaviors in a tantalum-oxide based resistive switching memory device that reversibly changes its switching mode between bipolar switching (BRS) and CRS in a single memory cell depending on the operation (compliance current) and fabrication (oxygen scavenger layer thickness) conditions. In addition, the origin of the switching mode transition was investigated through electrical and optical measurement, where the conductance is believed to be determined by two factors: formation of conductive filament and modulation of Schottky barrier. This result helps design a resistive switching device with desirable and stable switching behavior.

SUBMITTER: Kim T

PROVIDER: S-EPMC7347604 | biostudies-literature | 2020 Jul

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Publications

Reversible switching mode change in Ta2O5-based resistive switching memory (ReRAM).

Kim Taeyoon T Son Heerak H Kim Inho I Kim Jaewook J Lee Suyoun S Park Jong Keuk JK Kwak Joon Young JY Park Jongkil J Jeong YeonJoo Y

Scientific reports 20200709 1

We report the complementary resistive switching (CRS) behaviors in a tantalum-oxide based resistive switching memory device that reversibly changes its switching mode between bipolar switching (BRS) and CRS in a single memory cell depending on the operation (compliance current) and fabrication (oxygen scavenger layer thickness) conditions. In addition, the origin of the switching mode transition was investigated through electrical and optical measurement, where the conductance is believed to be ...[more]

PMID: 32647262

Similar Datasets

Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory.

Project description:Here, we present evidence of self-compliant and self-rectifying bipolar resistive switching behavior in Ni/SiNx/n⁺ Si and Ni/SiNx/n++ Si resistive-switching random access memory devices. The Ni/SiNx/n++ Si device's Si bottom electrode had a higher dopant concentration (As ion > 1019 cm-3) than the Ni/SiNx/n⁺ Si device; both unipolar and bipolar resistive switching behaviors were observed for the higher dopant concentration device owing to a large current overshoot. Conversely, for the device with the lower dopant concentration (As ion < 1018 cm-3), self-rectification and self-compliance were achieved owing to the series resistance of the Si bottom electrode.

| S-EPMC5459000 | biostudies-other

Comparison of diverse resistive switching characteristics and demonstration of transitions among them in Al-incorporated HfO2-based resistive switching memory for neuromorphic applications.

Project description:Diverse resistive switching behaviors are observed in the Pt/HfAlO x /TiN memory device depending on the compliance current, the sweep voltage amplitude, and the bias polarity. We extensively compare three types of resistive switching characteristics in a Pt/HfAlO x /TiN device in terms of endurance, ON/OFF ratio, linear conductance update, and read margin in a cross-point array structure for synaptic device applications. The bipolar resistive switching under positive set and negative reset shows better linear synaptic weight updates due to gradual switching than the bipolar resistive switching at the opposite polarity. The complementary resistive switching shows a higher read margin due to the current suppression at a low voltage regime. In addition, the potentiation and the depression can be adjusted at the same voltage polarity for a hardware neuromorphic system. Finally, we demonstrate the transition between bipolar resistive switching and complementary resistive switching, which could provide flexibility for different applications.

| S-EPMC9056407 | biostudies-literature

Resistive switching and battery-like characteristics in highly transparent Ta2O5/ITO thin-films.

Project description:Highly transparent resistive-switching (RS) devices were fabricated by growing amorphous tantalum pentoxide (a-Ta2O5) and indium tin oxide (a-ITO) thin films on barium-borosilicate glass (7059) substrates, using electron beam evaporation. These layers exhibited the transmittance greater than ~ 85% in the full visible region and showed RS behavior and battery-like IV characteristics. The overall characteristics of RS can be tuned using the top electrode and the thickness of a-Ta2O5. Thinner films showed a conventional RS behavior, while thicker films with metal electrodes showed a battery-like characteristic, which could be explained by additional redox reactions and non-Faradaic capacitive effects. Devices having battery-like IV characteristics showed higher enhanced, retention and low-operation current.

| S-EPMC10471767 | biostudies-literature

Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory.

Project description:Resistive random-access memory devices with atomic layer deposition HfO2 and radio frequency sputtering TiOx as resistive switching layers were fabricated successfully. Low-power characteristic with 1.52 μW set power (1 μA@1.52 V) and 1.12 μW reset power (1 μA@1.12 V) was obtained in the HfO2/TiOx resistive random-access memory (RRAM) devices by controlling the oxygen content of the TiOx layer. Besides, the influence of oxygen content during the TiOx sputtering process on the resistive switching properties would be discussed in detail. The investigations indicated that "soft breakdown" occurred easily during the electrical forming/set process in the HfO2/TiOx RRAM devices with high oxygen content of the TiOx layer, resulting in high resistive switching power. Low-power characteristic was obtained in HfO2/TiOx RRAM devices with appropriately high oxygen vacancy density of TiOx layer, suggesting that the appropriate oxygen vacancy density in the TiOx layer could avoid "soft breakdown" through the whole dielectric layers during forming/set process, thus limiting the current flowing through the RRAM device and decreasing operating power consumption.

| S-EPMC6509306 | biostudies-literature

Thermoelectric Seebeck effect in oxide-based resistive switching memory.

Project description:Reversible resistive switching induced by an electric field in oxide-based resistive switching memory shows a promising application in future information storage and processing. It is believed that there are some local conductive filaments formed and ruptured in the resistive switching process. However, as a fundamental question, how electron transports in the formed conductive filament is still under debate due to the difficulty to directly characterize its physical and electrical properties. Here we investigate the intrinsic electronic transport mechanism in such conductive filament by measuring thermoelectric Seebeck effects. We show that the small-polaron hopping model can well describe the electronic transport process for all resistance states, although the corresponding temperature-dependent resistance behaviours are contrary. Moreover, at low resistance states, we observe a clear semiconductor-metal transition around 150 K. These results provide insight in understanding resistive switching process and establish a basic framework for modelling resistive switching behaviour.

| S-EPMC4143917 | biostudies-literature

Valence Change Bipolar Resistive Switching Accompanied With Magnetization Switching in CoFe2O4 Thin Film.

Project description:Resistive Switching in oxides has offered new opportunities for developing resistive random access memory (ReRAM) devices. Here we demonstrated bipolar Resistive Switching along with magnetization switching of cobalt ferrite (CFO) thin film using Al/CFO/FTO sandwich structure, which makes it a potential candidate for developing future multifunctional memory devices. The device shows good retention characteristic time (>104?seconds) and endurance performance, a good resistance ratio of high resistance state (HRS) and low resistance state (LRS) ~103. Nearly constant resistance values in LRS and HRS confirm the stability and non-volatile nature of the device. The device shows different conduction mechanisms in the HRS and LRS i.e. Schottky, Poole Frenkel and Ohmic. Magnetization of the device is also modulated by applied electric field which has been attributed to the oxygen vacancies formed/annihilated during the voltage sweep and indicates the presence of valence change mechanism (VCM) in our device. It is suggested that push/pull of oxygen ions from oxygen diffusion layer during voltage sweep is responsible for forming/rupture of oxygen vacancies conducting channels, leading to switching between LRS and HRS and for switching in magnetization in CFO thin film. Presence of VCM in our device was confirmed by X-ray Photoelectron Spectroscopy at Al/CFO interface.

| S-EPMC5622061 | biostudies-literature

Physical electro-thermal model of resistive switching in bi-layered resistance-change memory.

Project description:Tantalum-oxide-based bi-layered resistance-change memories (RRAMs) have recently improved greatly with regard to their memory performances. The formation and rupture of conductive filaments is generally known to be the mechanism that underlies resistive switching. The nature of the filament has been studied intensively and several phenomenological models have consistently predicted the resistance-change behavior. However, a physics-based model that describes a complete bi-layered RRAM structure has not yet been demonstrated. Here, a complete electro-thermal resistive switching model based on the finite element method is proposed. The migration of oxygen vacancies is simulated by the local temperature and electric field derived from carrier continuity and heat equations fully coupled in a 3-D geometry, which considers a complete bi-layered structure that includes the top and bottom electrodes. The proposed model accurately accounts for the set/reset characteristics, which provides an in-depth understanding of the nature of resistive switching.

| S-EPMC3631947 | biostudies-literature

Controllable Resistive Switching in ReS2 /WS2 Heterostructure for Nonvolatile Memory and Synaptic Simulation.

Project description:Memristors with nonvolatile storage performance and simulated synaptic functions are regarded as one of the critical devices to overcome the bottleneck in traditional von Neumann computer architecture. 2D van der Waals heterostructures have paved a new way for the development of advanced memristors by integrating the intriguing features of different materials and offering additional controllability over their optoelectronic properties. Herein, planar memristors with both electrical and optical tunability based on ReS2 /WS2 van der Waals heterostructure are demonstrated. The devices show unique unipolar nonvolatile behavior with high Roff /Ron ratio of up to 106 , desirable endurance, and retention, which are superior to pure ReS2 and WS2 devices. When decreasing the channel length, the set voltage can be notably reduced while the high Roff /Ron ratios are retained. By introducing electrostatic doping through the gate control, the set voltage can be tailored in a wide range from 4.50 to 0.40 V. Furthermore, biological synaptic functions and plasticity, including spike rate-dependent plasticity and paired-pulse facilitation, are successfully realized. By employing optical illumination, resistive switching can also be modulated, which is dependent on the illumination energy and power. A mechanism related to the interlayer charge transfer controlled by optical excitation is revealed.

| S-EPMC10558669 | biostudies-literature

Conduction Mechanisms on High Retention Annealed MgO-based Resistive Switching Memory Devices.

Project description:We report on the conduction mechanisms of novel Ru/MgO/Cu and Ru/MgO/Ta resistive switching memory (RSM) devices. Current-voltage (I-V) measurements revealed Schottky emission (SE) as the dominant conduction mechanism in the high resistance state (HRS), which was validated by varying temperatures and transmission electron microscopy (TEM) results. Retention of more than 10 years at 85 °C was obtained for both Ru/MgO/Ta and Ru/MgO/Cu RSM devices. In addition, annealing processes greatly improved the consistency of HRS and LRS switching paths from cycle to cycle, exhibiting an average ON/OFF ratio of 102. Further TEM studies also highlighted the difference in crystallinity between different materials in Ru/MgO/Cu RSM devices, confirming Cu filament identification which was found to be 10 nm in width.

| S-EPMC6170501 | biostudies-literature

Electrochemical Oxidation Induced Multi-Level Memory in Carbon-Based Resistive Switching Devices.

Project description:In this work, we report for the first time the electrochemical oxidation as a technique to improve the electrical performances of carbon-based resistive switching devices. The devices obtained through the anodic oxidation of carbon-structures possess superior electrical performances i.e. a 3-level memory behavior and an ON/OFF ratio two order of magnitude higher than the non-oxidized carbon-based devices. It is demonstrated that the chemical composition of the carbon structures (i.e. percentage of oxygen groups, sp2 and sp3 carbon atoms) plays a key role in the improvement of the carbon-based devices. The electrochemical oxidation allows the possibility to control the oxidation degree, and therefore, to tailor the devices electrical performances. We demonstrated that the resistive switching behavior in the electrochemically oxidized devices is originated from the formation of conductive filament paths, which are built from the oxygen vacancies and structural defects of the anodic oxidized carbon materials. The novelty of this work relies on the anodic oxidation as a time- and cost-effective technique that can be employed for the engineering and improvement of the electrical performances of next generation carbon-based resistive switching devices.

| S-EPMC6367418 | biostudies-literature