Dataset Information

Plasma-Assisted Chemical Vapor Deposition of F-Doped MnO2 Nanostructures on Single Crystal Substrates.

ABSTRACT: MnO2 nanostructures were fabricated by plasma assisted-chemical vapor deposition (PA-CVD) using a fluorinated diketonate diamine manganese complex, acting as single-source precursor for both Mn and F. The syntheses were performed from Ar/O2 plasmas on MgAl2O4(100), YAlO3(010), and Y3Al5O12(100) single crystals at a growth temperature of 300 °C, in order to investigate the substrate influence on material chemico-physical properties. A detailed characterization through complementary analytical techniques highlighted the formation of highly pure and oriented F-doped systems, comprising the sole β-MnO2 polymorph and exhibiting an inherent oxygen deficiency. Optical absorption spectroscopy revealed the presence of an appreciable Vis-light harvesting, of interest in view of possible photocatalytic applications in pollutant degradation and hydrogen production. The used substrates directly affected the system structural features, as well as the resulting magnetic characteristics. In particular, magnetic force microscopy (MFM) measurements, sensitive to the out-of-plane magnetization component, highlighted the formation of spin domains and long-range magnetic ordering in the developed materials, with features dependent on the system morphology. These results open the door to future engineering of the present nanostructures as possible magnetic media for integration in data storage devices.

SUBMITTER: Bigiani L

PROVIDER: S-EPMC7407531 | biostudies-literature |

REPOSITORIES: biostudies-literature

ACCESS DATA

Similar Datasets

Project description:We report a combined experimental and modeling study of microwave-activated dilute CH4/N2/H2 plasmas, as used for chemical vapor deposition (CVD) of diamond, under very similar conditions to previous studies of CH4/H2, CH4/H2/Ar, and N2/H2 gas mixtures. Using cavity ring-down spectroscopy, absolute column densities of CH(X, v = 0), CN(X, v = 0), and NH(X, v = 0) radicals in the hot plasma have been determined as functions of height, z, source gas mixing ratio, total gas pressure, p, and input power, P. Optical emission spectroscopy has been used to investigate, with respect to the same variables, the relative number densities of electronically excited species, namely, H atoms, CH, C2, CN, and NH radicals and triplet N2 molecules. The measurements have been reproduced and rationalized from first-principles by 2-D (r, z) coupled kinetic and transport modeling, and comparison between experiment and simulation has afforded a detailed understanding of C/N/H plasma-chemical reactivity and variations with process conditions and with location within the reactor. The experimentally validated simulations have been extended to much lower N2 input fractions and higher microwave powers than were probed experimentally, providing predictions for the gas-phase chemistry adjacent to the diamond surface and its variation across a wide range of conditions employed in practical diamond-growing CVD processes. The strongly bound N2 molecule is very resistant to dissociation at the input MW powers and pressures prevailing in typical diamond CVD reactors, but its chemical reactivity is boosted through energy pooling in its lowest-lying (metastable) triplet state and subsequent reactions with H atoms. For a CH4 input mole fraction of 4%, with N2 present at 1-6000 ppm, at pressure p = 150 Torr, and with applied microwave power P = 1.5 kW, the near-substrate gas-phase N atom concentration, [N]ns, scales linearly with the N2 input mole fraction and exceeds the concentrations [NH]ns, [NH2]ns, and [CN]ns of other reactive nitrogen-containing species by up to an order of magnitude. The ratio [N]ns/[CH3]ns scales proportionally with (but is 102-103 times smaller than) the ratio of the N2 to CH4 input mole fractions for the given values of p and P, but [N]ns/[CN]ns decreases (and thus the potential importance of CN in contributing to N-doped diamond growth increases) as p and P increase. Possible insights regarding the well-documented effects of trace N2 additions on the growth rates and morphologies of diamond films formed by CVD using MW-activated CH4/H2 gas mixtures are briefly considered.

Dataset Information

Plasma-Assisted Chemical Vapor Deposition of F-Doped MnO2 Nanostructures on Single Crystal Substrates.

Similar Datasets

OmicsDI is part of the ELIXIR infrastructure

Tweets