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Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source.

ABSTRACT: Aluminum nitride (AlN) thin films were grown using thermal atomic layer deposition in the temperature range of 175-350 °C. The thin films were deposited using trimethyl aluminum (TMA) and hydrazine (N2H4) as a metal precursor and nitrogen source, respectively. Highly reactive N2H4, compared to its conventionally used counterpart, ammonia (NH3), provides a higher growth per cycle (GPC), which is approximately 2.3 times higher at a deposition temperature of 300 °C and, also exhibits a low impurity concentration in as-deposited films. Low temperature AlN films deposited at 225 °C with a capping layer had an Al to N composition ratio of 1:1.1, a close to ideal composition ratio, with a low oxygen content (7.5%) while exhibiting a GPC of 0.16 nm/cycle. We suggest that N2H4 as a replacement for NH3 is a good alternative due to its stringent thermal budget.

SUBMITTER: Jung YC 

PROVIDER: S-EPMC7436040 | biostudies-literature | 2020 Jul

REPOSITORIES: biostudies-literature

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Aluminum nitride (AlN) thin films were grown using thermal atomic layer deposition in the temperature range of 175-350 °C. The thin films were deposited using trimethyl aluminum (TMA) and hydrazine (N<sub>2</sub>H<sub>4</sub>) as a metal precursor and nitrogen source, respectively. Highly reactive N<sub>2</sub>H<sub>4</sub>, compared to its conventionally used counterpart, ammonia (NH<sub>3</sub>), provides a higher growth per cycle (GPC), which is approximately 2.3 times higher at a deposition  ...[more]

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