Ontology highlight
ABSTRACT:
SUBMITTER: Jung YC
PROVIDER: S-EPMC7436040 | biostudies-literature | 2020 Jul
REPOSITORIES: biostudies-literature
Jung Yong Chan YC Hwang Su Min SM Le Dan N DN Kondusamy Aswin L N ALN Mohan Jaidah J Kim Sang Woo SW Kim Jin Hyun JH Lucero Antonio T AT Ravichandran Arul A Kim Harrison Sejoon HS Kim Si Joon SJ Choi Rino R Ahn Jinho J Alvarez Daniel D Spiegelman Jeff J Kim Jiyoung J
Materials (Basel, Switzerland) 20200731 15
Aluminum nitride (AlN) thin films were grown using thermal atomic layer deposition in the temperature range of 175-350 °C. The thin films were deposited using trimethyl aluminum (TMA) and hydrazine (N<sub>2</sub>H<sub>4</sub>) as a metal precursor and nitrogen source, respectively. Highly reactive N<sub>2</sub>H<sub>4</sub>, compared to its conventionally used counterpart, ammonia (NH<sub>3</sub>), provides a higher growth per cycle (GPC), which is approximately 2.3 times higher at a deposition ...[more]