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Floquet metal-to-insulator phase transitions in semiconductor nanowires.

ABSTRACT: We study steady states of semiconductor nanowires subjected to strong resonant time-periodic drives. The steady states arise from the balance between electron-phonon scattering, electron-hole recombination via photoemission, and Auger scattering processes. We show that tuning the strength of the driving field drives a transition between an electron-hole metal (EHM) phase and a Floquet insulator (FI) phase. We study the critical point controlling this transition. The EHM-to-FI transition can be observed by monitoring the presence of peaks in the density-density response function, which are associated with the Fermi momentum of the EHM phase and are absent in the FI phase. Our results may help guide future studies toward inducing exotic nonequilibrium phases of matter by periodic driving.

SUBMITTER: Esin I

PROVIDER: S-EPMC7449683 | biostudies-literature | 2020 Aug

REPOSITORIES: biostudies-literature

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Floquet metal-to-insulator phase transitions in semiconductor nanowires.

Esin Iliya I Rudner Mark S MS Lindner Netanel H NH

Science advances 20200826 35

We study steady states of semiconductor nanowires subjected to strong resonant time-periodic drives. The steady states arise from the balance between electron-phonon scattering, electron-hole recombination via photoemission, and Auger scattering processes. We show that tuning the strength of the driving field drives a transition between an electron-hole metal (EHM) phase and a Floquet insulator (FI) phase. We study the critical point controlling this transition. The EHM-to-FI transition can be o ...[more]

PMID: 32923615

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Project description:We analyze the ferroelectric domain-wall induced negative capacitance (NC) effect in Metal-FE-Insulator-Metal (MFIM) and Metal-FE-Insulator-Semiconductor (MFIS) stacks through phase-field simulations by self-consistently solving time-dependent Ginzburg Landau equation, Poisson's equation and semiconductor charge equations. Considering Hf0.5Zr0.5O2 as the ferroelectric material, we study 180° ferroelectric domain formation in MFIM and MFIS stacks and their polarization switching characteristics. Our analysis signifies that the applied voltage-induced polarization switching via soft domain-wall displacement exhibits non-hysteretic characteristics. In addition, the change in domain-wall energy, due to domain-wall displacement, exhibits a long-range interaction and thus, leads to a non-homogeneous effective local negative permittivity in the ferroelectric. Such effects yield an average negative effective permittivity that further provides an enhanced charge response in the MFIM stack, compared to Metal-Insulator-Metal. Furthermore, we show that the domain-wall induced negative effective permittivity is not an intrinsic property of the ferroelectric material and therefore, is dependent on its thickness, the gradient energy coefficient and the in-plane permittivity of the underlying insulator. Similar to the MFIM stack, MFIS stack also exhibits an enhanced charge/capacitance response compared to Metal-Oxide-Semiconductor (MOS) capacitor. Simultaneously, the multi-domain state of the ferroelectric induces non-homogeneous potential in the underlying insulator and semiconductor layer. At low applied voltages, such non-homogeneity leads to the co-existence of electrons and holes in an undoped semiconductor. In addition, we show that with the ferroelectric layer being in the 180° multi-domain state, the minimum potential at the ferroelectric-dielectric interface and hence, the minimum surface potential in the semiconductor, does not exceed the applied voltage (in-spite of the local differential amplification and charge enhancement).

Dataset Information

Floquet metal-to-insulator phase transitions in semiconductor nanowires.

Publications

Floquet metal-to-insulator phase transitions in semiconductor nanowires.

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