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Photovoltaic and flexible deep ultraviolet wavelength detector based on novel ?-Ga₂O₃/muscovite heteroepitaxy.

ABSTRACT: Flexible and self-powered deep ultraviolet (UV) photodetectors are pivotal for next-generation electronic skins to enrich human life quality. The fabrication of epitaxial ?-Ga₂O₃ thin films is challenging on flexible substrates due to high-temperature growth requirements. Herein, ?-Ga₂O₃ ([Formula: see text] 0 1) films are hetero-epitaxially grown on ultra-thin and environment-friendly muscovite mica which is the first time ?-Ga₂O₃ epitaxy growth on any flexible substrate. Integration of Gallium oxide with muscovite enables high-temperature processing as well as excellent flexibility compared to polymer substrates. Additionally, the metal-semiconductor-metal (MSM) photodetector on ?-Ga₂O₃ layer shows an ultra-low dark current of 800 fA at zero bias. The photovoltaic peak responsivity of 11.6 µA/W is obtained corresponding to very weak illumination of 75 ?W/cm² of 265 nm wavelength. Thermally stimulated current (TSC) measurements are employed to investigate the optically active trap states. Among these traps, trap with an activation energy of 166 meV dominates the persistence photocurrent in the devices. Finally, photovoltaic detectors have shown excellent photocurrent stability under bending induced stress up to 0.32%. Hence, this novel heteroepitaxy opens the new way for flexible deep UV photodetectors.

SUBMITTER: Tak BR

PROVIDER: S-EPMC7528161 | biostudies-literature | 2020 Sep

REPOSITORIES: biostudies-literature

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Photovoltaic and flexible deep ultraviolet wavelength detector based on novel β-Ga2O3/muscovite heteroepitaxy.

Tak Bhera Ram BR Yang Ming-Min MM Lai Yu-Hong YH Chu Ying-Hao YH Alexe Marin M Singh Rajendra R

Scientific reports 20200930 1

Flexible and self-powered deep ultraviolet (UV) photodetectors are pivotal for next-generation electronic skins to enrich human life quality. The fabrication of epitaxial β-Ga2O3 thin films is challenging on flexible substrates due to high-temperature growth requirements. Herein, β-Ga2O3 ([Formula: see text] 0 1) films are hetero-epitaxially grown on ultra-thin and environment-friendly muscovite mica which is the first time β-Ga2O3</sub ...[more]

PMID: 32999335

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Project description:It is generally known that a layer of amorphous silicon oxide (SiO2) naturally exists on the surface of silicon, resulting in the growth of gallium oxide (Ga2O3) that is no longer affected by substrate crystallinity during sputtering. This work highlights the formation energy between the native amorphous nano-oxide film formed on the Si substrate and monoclinic β-Ga2O3 dominating the preferred orientation prepared for deep ultraviolet photodetectors. The latter were deposited on p-type silicon (p-Si) with (111) orientation using radio frequency sputtering at 600 °C and post rapid thermal annealing (RTA). The X-ray diffraction (XRD) results indicate both as-deposited and postannealing films with the (400) preferred orientation for a layer thickness of 100 nm. However, slight random orientation with the amorphous structure is mixed in the preferred one for the as-deposited film with a thickness of 200 nm and reduced after being annealed at 800 °C, which is observed by XRD and transmission electron microscopy. Meanwhile, thermal-induced massive twin boundaries (TBs) and stacking faults (SFs) were generated when annealed at 1000 °C, owing to the relaxation of lattice strain by the coherent interface. The interfacial bonding energy per unit area (E i) between β-Ga2O3 films with various facets ((001), (010), (100), and (2̅01)) and amorphous SiO2 was calculated using density functional theory. The E i of β-Ga2O3 (100)/SiO2 reveals the highest value (0.289 eV/Å2), which is consistent with the (100) preferred orientation of deposited films. The (100) preferred orientation is the driving force for TBs and SFs. The discrimination of responsivities and the photo/dark current contrast ratio (I ph/I dark) are inversely proportional to the amorphous structure, grain boundaries, TBs, and SFs. Therefore, optimum metal-semiconductor-metal photodetector performance is achieved for RTA-treated samples at 800 °C with an I ph/I dark of 3.91 × 102 and a responsivity of 0.702 A/W (λpeak = 230 nm) at 5 V bias for a 200 nm thin film.

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Photovoltaic and flexible deep ultraviolet wavelength detector based on novel ?-Ga₂O₃/muscovite heteroepitaxy.

Publications

Photovoltaic and flexible deep ultraviolet wavelength detector based on novel β-Ga<sub>2</sub>O<sub>3</sub>/muscovite heteroepitaxy.

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Photovoltaic and flexible deep ultraviolet wavelength detector based on novel ?-Ga2O3/muscovite heteroepitaxy.

Publications

Photovoltaic and flexible deep ultraviolet wavelength detector based on novel β-Ga<sub>2</sub>O<sub>3</sub>/muscovite heteroepitaxy.

Similar Datasets

OmicsDI is part of the ELIXIR infrastructure

Tweets

Photovoltaic and flexible deep ultraviolet wavelength detector based on novel ?-Ga₂O₃/muscovite heteroepitaxy.