Browse
Submit Data
Databases
API
Help

Dataset Information

25 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

An all-sputtered photovoltaic ultraviolet photodetector based on co-doped CuCrO₂ and Al-doped ZnO heterojunction.

ABSTRACT: We propose and fabricate a heterojunction between Al-doped ZnO and (Mg, N)-doped CuCrO₂ thin films using the sputtering deposition method. These materials possess wide bandgap that makes them transparent in the visible light but excellent UV-absorbers. On the other hand, the high conductivity of these materials, respectively as n-type and p-type transparent conducting oxides, facilitates the charge transport. We show that the p-n junction fabricated from these materials has the potential to act as a high-performance UV photovoltaic photodetector. The proposed structure, demonstrates fast responses in order of sub seconds, photosensitivity of ~ 41,000, responsivity of 1.645 mA/W, and a detectivity of 3.52 × 10¹² Jones that are significantly improved in comparison with the Al-doped ZnO photoconductor. This excellent improvement is attributed to the capability of the photovoltaic configuration that creates a built-in voltage and facilitates the charge separation and collection rather than recombination in the photoconductor configuration.

SUBMITTER: Ahmadi M

PROVIDER: S-EPMC8455524 | biostudies-literature |

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Similar Datasets

Toward Industrial Production of a High-Performance Self-Powered Ultraviolet Photodetector Using Nanoporous Al-Doped ZnO Thin Films.

Project description:Al-doped ZnO (AZO) thin films are effective n-type semiconductors for ultraviolet (UV) detection because of their low cost, high electron mobility, and high sensitivity to UV light, especially in the UVA spectrum. However, a reasonable compromise between performance (such as sensitivity, detectivity, and response time) and fabrication ease remains an obstacle to the practicability of AZO-based UV photodetectors. To address this issue, we propose an efficient strategy to achieve a large AZO photoactive area for outstanding performance, along with a facile sol-gel method. Consequently, the device exhibits a superb on/off ratio of >104, a high detectivity of 1.85 × 1012 Jones, and a fast response speed under 365 nm UVA illumination without external energy consumption. Hence, this study suggests a self-powered and high-performance nanoporous AZO-based UVA detector with an environmentally friendly scalable process that satisfies industrial production requirements for numerous practical UV-detection applications.

| S-EPMC10536242 | biostudies-literature

Ultraviolet Photodetector Based on Poly(3,4-Ethylenedioxyselenophene)/ZnO Core-Shell Nanorods p-n Heterojunction.

Project description:In this work, we successfully assembled an organic-inorganic core-shell hybrid p-n heterojunction ultraviolet photodetector by the electropolymerization deposition of poly(3,4-ethylenedioxyselenophene) (PEDOS) on the surface of zinc oxide nanoarrays (ZnO NRs). The structures of composite were confirmed by FTIR, UV-Vis, XRD and XPS. Mott-Schottky analysis was used to study the p-n heterojunction structure. The photodetection properties of ZnO NRs/PEDOS heterojunction ultraviolet photodetector were systematically investigated current-voltage (I-V) and current-time (I-t) analysis under different bias voltages. The results showed that PEDOS films uniformly grew on ZnO NRs surface and core-shell structure was formed. The p-n heterojunction structure was formed with strong built-in electric field between ZnO NRs and PEDOS. Under the irradiation of UV light, the device showed a good rectification behavior. The responsivity, detection rate and the external quantum efficiency of the ultraviolet photodetector reached to 247.7 A/W, 3.41 × 1012 Jones and 84,000% at 2 V bias, respectively. The rise time (τr) and fall time (τf) of ZnO NRs/PEDOS UV photodetector were obviously shortened compared to ZnO UV photodetector. The results show that the introduction of PEDOS effectively improves the performance of the UV photodetector.

| S-EPMC9314489 | biostudies-literature

Radial heterojunction based on single ZnO-CuxO core-shell nanowire for photodetector applications.

Project description:ZnO-CuxO core-shell radial heterojunction nanowire arrays were fabricated by a straightforward approach which combine two simple, cost effective and large-scale preparation methods: (i) thermal oxidation in air of a zinc foil for obtaining ZnO nanowire arrays and (ii) radio frequency magnetron sputtering for covering the surface of the ZnO nanowires with a CuxO thin film. The structural, compositional, morphological and optical properties of the high aspect ratio ZnO-CuxO core-shell nanowire arrays were investigated. Individual ZnO-CuxO core-shell nanowires were contacted with Pt electrodes by means of electron beam lithography technique, diode behaviour being demonstrated. Further it was found that these n-p radial heterojunction diodes based on single ZnO-CuxO nanowires exhibit a change in the current under UV light illumination and therefore behaving as photodetectors.

| S-EPMC6447533 | biostudies-literature

High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction.

Project description:Ultraviolet (UV) photodetector has attracted extensive interests due to its wide-ranging applications from defense technology to optical communications. The use of wide bandgap metal oxide semiconductor materials is of great interest in the development of UV photodetector due to their unique electronic and optical properties. In this work, deep UV photodetector based on NiO/β-Ga2O3 heterojunction was developed and investigated. The β-Ga2O3 layer was prepared by magnetron sputtering and exhibited selective orientation along the family of ([Formula: see text] 01) crystal plane after annealing. The photodetector demonstrated good performance with a high responsivity (R) of 27.43 AW-1 under a 245-nm illumination (27 μWcm-2) and the maximum detectivity (D*) of 3.14 × 1012 cmHz1/2 W-1, which was attributed to the p-NiO/n-β-Ga2O3 heterojunction.

| S-EPMC7036083 | biostudies-literature

Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunction.

Project description:The recent reports of various photodetectors based on molybdenum disulfide (MoS2) field effect transistors showed that it was difficult to obtain optoelectronic performances in the broad detection range [visible-infrared (IR)] applicable to various fields. Here, by forming a mono-/multi-layer nano-bridge multi-heterojunction structure (more than?>?300 junctions with 25?nm intervals) through the selective layer control of multi-layer MoS2, a photodetector with ultrasensitive optoelectronic performances in a broad spectral range (photoresponsivity of 2.67?×?106?A/W at ??=?520?nm and 1.65?×?104 A/W at ??=?1064?nm) superior to the previously reported MoS2-based photodetectors could be successfully fabricated. The nano-bridge multi-heterojunction is believed to be an important device technology that can be applied to broadband light sensing, highly sensitive fluorescence imaging, ultrasensitive biomedical diagnostics, and ultrafast optoelectronic integrated circuits through the formation of a nanoscale serial multi-heterojunction, just by adding a selective layer control process.

| S-EPMC6796006 | biostudies-literature

Ultraviolet Photodetector Based on a Beta-Gallium Oxide/Nickel Oxide/Beta-Gallium Oxide Heterojunction Structure.

Project description:In this paper, an n-p-n structure based on a β-Ga2O3/NiO/β-Ga2O3 junction was fabricated. The device based on the β-Ga2O3/NiO/β-Ga2O3 structure, as an ultraviolet (UV) photodetector, was compared with a p-n diode based on a NiO/β-Ga2O3 structure, where it showed rectification and 10 times greater responsivity and amplified the photocurrent. The reverse current increased in proportion to the 1.5 power of UV light intensity. The photocurrent amplification was related to the accumulation of holes in the NiO layer given by the heterobarrier for holes from the NiO layer to the β-Ga2O3 layer. Moreover, the device could respond to an optical pulse of less than a few microseconds.

| S-EPMC10575374 | biostudies-literature

Lateral multilayer/monolayer MoS2 heterojunction for high performance photodetector applications.

Project description:Inspired by the unique, thickness-dependent energy band structure of 2D materials, we study the electronic and optical properties of the photodetector based on the as-exfoliated lateral multilayer/monolayer MoS2 heterojunction. Good gate-tunable current-rectifying characteristics are observed with a rectification ratio of 103 at V gs?=?10?V, which may offer an evidence on the existence of the heterojunction. Upon illumination from ultraviolet to visible light, the multilayer/monolayer MoS2 heterojunction shows outstanding photodetective performance, with a photoresponsivity of 103?A/W, a photosensitivity of 1.7?×?105 and a detectivity of 7?×?1010 Jones at 470?nm light illumination. Abnormal photoresponse under positive gate voltage is observed and analyzed, which indicates the important role of the heterojunction in the photocurrent generation process. We believe that these results contribute to a better understanding on the fundamental physics of band alignment for multilayer/monolayer MoS2 heterojunction and provide us a feasible solution for novel electronic and optoelectronic devices.

| S-EPMC5495793 | biostudies-literature

Ultrafast Charge Transfer 2D MoS2 /Organic Heterojunction for Sensitive Photodetector.

Project description:The 2D MoS2 with superior optoelectronic properties such as high charge mobility and broadband photoresponse has attracted broad research interests in photodetectors (PD). However, due to the atomic thin layer of 2D MoS2 , its pure photodetectors usually suffer from inevitable drawbacks such as large dark current, and intrinsically slow response time. Herein, a new organic material BTP-4F with high mobility is successfully stacked with 2D MoS2 film to form an integrated 2D MoS2 /organic P-N heterojunction, facilitating efficient charge transfer as well as significantly suppressed dark current. As a result, the as-obtained 2D MoS2 /organic (PD) has exhibited excellent response and fast response time of 332/274 µs. The analysis validated photogenerated electron transition from this monolayer MoS2 to subsequent BTP-4F film, whereas the transited electron is originated from the A- exciton of 2D MoS2 by temperature-dependent photoluminescent analysis. The ultrafast charge transfer time of ≈0.24 ps measured by time-resolved transient absorption spectrum is beneficial for efficient electron-hole pair separation, greatly contributing to the obtained fast photoresponse time of 332/274 µs. This work can open a promising window to acquire low-cost and high-speed (PD).

| S-EPMC10131850 | biostudies-literature

Optical, electrical and photoresponse data of flexible and high-performing NiO/ZnO ultraviolet photodetector.

Project description:In this work, the fabrication process flow of ZnO/NiO heterojunction device on a PET substrate, optical properties, physical properties and photoresponses presented (Patel and Kim, 2017) [1]. Absorption coefficient and Tauc plots of ZnO and NiO samples are summarized. Digital photograph of flexible NiO/ZnO/ITO device on a PET substrate is presented. Surface morphologies of ITO on PET, polycrystalline ZnO on ITO/PET, and nanocrystalline NiO on ZnO/ITO/PET is presented with a demonstration of scissor-cut design. NiO/ZnO/ITO/PET photoelectric device has advantages of large-scale production and light-weight. Transmittance, reflectance and absorbance dataset of the native PET substrate (100 μm thick) is summarized. Photoresponses of the transparent (NiO/ZnO/ITO/PET) device with bias modulations including the rising edge and falling edge are included in this article.

| S-EPMC5988381 | biostudies-literature

Self-powered p-NiO/n-ZnO heterojunction ultraviolet photodetectors fabricated on plastic substrates.

Project description:A self-powered ultraviolet (UV) photodetector (PD) based on p-NiO and n-ZnO was fabricated using low-temperature sputtering technique on indium doped tin oxide (ITO) coated plastic polyethylene terephthalate (PET) substrates. The p-n heterojunction showed very fast temporal photoresponse with excellent quantum efficiency of over 63% under UV illumination at an applied reverse bias of 1.2 V. The engineered ultrathin Ti/Au top metal contacts and UV transparent PET/ITO substrates allowed the PDs to be illuminated through either front or back side. Morphology, structural, chemical and optical properties of sputtered NiO and ZnO films were also investigated.

| S-EPMC4759661 | biostudies-literature