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An all-sputtered photovoltaic ultraviolet photodetector based on co-doped CuCrO2 and Al-doped ZnO heterojunction.


ABSTRACT: We propose and fabricate a heterojunction between Al-doped ZnO and (Mg, N)-doped CuCrO2 thin films using the sputtering deposition method. These materials possess wide bandgap that makes them transparent in the visible light but excellent UV-absorbers. On the other hand, the high conductivity of these materials, respectively as n-type and p-type transparent conducting oxides, facilitates the charge transport. We show that the p-n junction fabricated from these materials has the potential to act as a high-performance UV photovoltaic photodetector. The proposed structure, demonstrates fast responses in order of sub seconds, photosensitivity of ~ 41,000, responsivity of 1.645 mA/W, and a detectivity of 3.52 × 1012 Jones that are significantly improved in comparison with the Al-doped ZnO photoconductor. This excellent improvement is attributed to the capability of the photovoltaic configuration that creates a built-in voltage and facilitates the charge separation and collection rather than recombination in the photoconductor configuration.

SUBMITTER: Ahmadi M 

PROVIDER: S-EPMC8455524 | biostudies-literature | 2021 Sep

REPOSITORIES: biostudies-literature

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An all-sputtered photovoltaic ultraviolet photodetector based on co-doped CuCrO<sub>2</sub> and Al-doped ZnO heterojunction.

Ahmadi Morteza M   Abrari Masoud M   Ghanaatshoar Majid M  

Scientific reports 20210921 1


We propose and fabricate a heterojunction between Al-doped ZnO and (Mg, N)-doped CuCrO<sub>2</sub> thin films using the sputtering deposition method. These materials possess wide bandgap that makes them transparent in the visible light but excellent UV-absorbers. On the other hand, the high conductivity of these materials, respectively as n-type and p-type transparent conducting oxides, facilitates the charge transport. We show that the p-n junction fabricated from these materials has the potent  ...[more]

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