Synthesis and characterization of WS₂/graphene/SiC van der Waals heterostructures via WO_3-x thin film sulfurization.

ABSTRACT: Van der Waals heterostructures of monolayer transition metal dichalcogenides (TMDs) and graphene have attracted keen scientific interest due to the complementary properties of the materials, which have wide reaching technological applications. Direct growth of uniform, large area TMDs on graphene substrates by chemical vapor deposition (CVD) is limited by slow lateral growth rates, which result in a tendency for non-uniform multilayer growth. In this work, monolayer and few-layer WS₂ was grown on epitaxial graphene on SiC by sulfurization of WO_3-x thin films deposited directly onto the substrate. Using this method, WS₂ growth was achieved at temperatures as low as 700 °C - significantly less than the temperature required for conventional CVD. Achieving long-range uniformity remains a challenge, but this process could provide a route to synthesize a broad range of TMD/graphene van der Waals heterostructures with novel properties and functionality not accessible by conventional CVD growth.

SUBMITTER: Bradford J 

PROVIDER: S-EPMC7567119 | biostudies-literature | 2020 Oct

REPOSITORIES: biostudies-literature