Browse
Submit Data
Databases
API
Help

Dataset Information

38 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Spin-orbit torque switching of an antiferromagnetic metallic heterostructure.

ABSTRACT: The ability to represent information using an antiferromagnetic material is attractive for future antiferromagnetic spintronic devices. Previous studies have focussed on the utilization of antiferromagnetic materials with biaxial magnetic anisotropy for electrical manipulation. A practical realization of these antiferromagnetic devices is limited by the requirement of material-specific constraints. Here, we demonstrate current-induced switching in a polycrystalline PtMn/Pt metallic heterostructure. A comparison of electrical transport measurements in PtMn with and without the Pt layer, corroborated by x-ray imaging, reveals reversible switching of the thermally-stable antiferromagnetic Néel vector by spin-orbit torques. The presented results demonstrate the potential of polycrystalline metals for antiferromagnetic spintronics.

SUBMITTER: DuttaGupta S

PROVIDER: S-EPMC7658218 | biostudies-literature | 2020 Nov

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Publications

Spin-orbit torque switching of an antiferromagnetic metallic heterostructure.

DuttaGupta Samik S Kurenkov A A Tretiakov Oleg A OA Krishnaswamy G G Sala G G Krizakova V V Maccherozzi F F Dhesi S S SS Gambardella P P Fukami S S Ohno H H

Nature communications 20201111 1

The ability to represent information using an antiferromagnetic material is attractive for future antiferromagnetic spintronic devices. Previous studies have focussed on the utilization of antiferromagnetic materials with biaxial magnetic anisotropy for electrical manipulation. A practical realization of these antiferromagnetic devices is limited by the requirement of material-specific constraints. Here, we demonstrate current-induced switching in a polycrystalline PtMn/Pt metallic heterostructu ...[more]

PMID: 33177506

Similar Datasets

Field-free spin-orbit torque switching via out-of-plane spin-polarization induced by an antiferromagnetic insulator/heavy metal interface.

Project description:Manipulating spin polarization orientation is challenging but crucial for field-free spintronic devices. Although such manipulation has been demonstrated in a limited number of antiferromagnetic metal-based systems, the inevitable shunting effects from the metallic layer can reduce the overall device efficiency. In this study, we propose an antiferromagnetic insulator-based heterostructure NiO/Ta/Pt/Co/Pt for such spin polarization control without any shunting effect in the antiferromagnetic layer. We show that zero-field magnetization switching can be realized and is related to the out-of-plane component of spin polarization modulated by the NiO/Pt interface. The zero-field magnetization switching ratio can be effectively tuned by the substrates, in which the easy axis of NiO can be manipulated by the tensile or compressive strain from the substrates. Our work demonstrates that the insulating antiferromagnet based heterostructure is a promising platform to enhance the spin-orbital torque efficiency and achieve field-free magnetization switching, thus opening an avenue towards energy-efficient spintronic devices.

| S-EPMC10198983 | biostudies-literature

Impact of Spin-Orbit Torque on Spin-Transfer Torque Switching in Magnetic Tunnel Junctions.

Project description:The paper presents our simulated results showing the substantial improvement of both switching speed and energy consumption in a perpendicular magnetic tunnel junction (p-MTJ), a core unit of Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM), by the help of additional Spin-Orbit-Torque (SOT) write pulse current (WPSOT). An STT-SOT hybrid torque module for OOMMF simulation is implemented to investigate the switching behavior of a 20?nm cell in the p-MTJ. We found that the assistance of WPSOT to STT write pulse current (WPSTT) have a huge influence on the switching behavior of the free layer in the p-MTJ. For example, we could dramatically reduce the switching time (tSW) by 80% and thereby reduce the write energy over 70% as compared to those in the absence of the WPSOT. Even a very tiny amplitude of WPSOT (JSOT of the order of 102?A/m2) substantially assists to reduce the critical current density for switching of the free layer and thereby decreases the energy consumption as well. It is worth to be pointed out that the energy can be saved further by tuning the WPSOT parameters, i.e., amplitude and duration along at the threshold WPSTT. Our findings show that the proposed STT-SOT hybrid switching scheme has a great impact on the MRAM technology seeking the high speed and low energy consumption.

| S-EPMC7029010 | biostudies-literature

Electric Field Control of Spin-Orbit Torque Magnetization Switching in a Spin-Orbit Ferromagnet Single Layer.

Project description:To achieve a desirable magnitude of spin-orbit torque (SOT) for magnetization switching and realize multifunctional spin logic and memory devices utilizing SOT, controlling the SOT manipulation is vitally important. In conventional SOT bilayer systems, researchers have tried to control the magnetization switching behavior via interfacial oxidization, modulation of spin-orbit effective field, and effective spin Hall angle; however, the switching efficiency is limited by the interface quality. A current-induced effective magnetic field in a single layer of a ferromagnet with strong spin-orbit interactions, the so-called spin-orbit ferromagnet, can be utilized to induce SOT. In spin-orbit ferromagnet systems, electric field application has the potential for manipulating the spin-orbit interactions via carrier concentration modulation. In this work, it is demonstrated that SOT magnetization switching can be successfully controlled via an external electric field using a (Ga, Mn)As single layer. By applying a gate voltage, the switching current density can be solidly and reversibly manipulated with a large ratio of 14.5%, which is ascribed to the successful modulation of the interfacial electric field. The findings of this work help further the understanding of the magnetization switching mechanism and advance the development of gate-controlled SOT devices.

| S-EPMC10460875 | biostudies-literature

Anomalous spin-orbit torque switching due to field-like torque-assisted domain wall reflection.

Project description:Spin-orbit torques (SOTs) allow the electrical control of magnetic states. Current-induced SOT switching of the perpendicular magnetization is of particular technological importance. The SOT consists of damping-like and field-like torques, and understanding the combined effects of these two torque components is required for efficient SOT switching. Previous quasi-static measurements have reported an increased switching probability with the width of current pulses, as predicted considering the damping-like torque alone. We report a decreased switching probability at longer pulse widths, based on time-resolved measurements. Micromagnetic analysis reveals that this anomalous SOT switching results from domain wall reflections at sample edges. The domain wall reflection was found to strongly depend on the field-like torque and its relative sign to the damping-like torque. Our result demonstrates a key role of the field-like torque in deterministic SOT switching and the importance of the sign correlation of the two torque components, which may shed light on the SOT switching mechanism.

| S-EPMC5400426 | biostudies-literature

Spin-orbit torque-driven propagating spin waves.

Project description:Spin-orbit torque (SOT) can drive sustained spin wave (SW) auto-oscillations in a class of emerging microwave devices known as spin Hall nano-oscillators (SHNOs), which have highly nonlinear properties governing robust mutual synchronization at frequencies directly amenable to high-speed neuromorphic computing. However, all demonstrations have relied on localized SW modes interacting through dipolar coupling and/or direct exchange. As nanomagnonics requires propagating SWs for data transfer and additional computational functionality can be achieved using SW interference, SOT-driven propagating SWs would be highly advantageous. Here, we demonstrate how perpendicular magnetic anisotropy can raise the frequency of SOT-driven auto-oscillations in magnetic nanoconstrictions well above the SW gap, resulting in the efficient generation of field and current tunable propagating SWs. Our demonstration greatly extends the functionality and design freedom of SHNOs, enabling long-range SOT-driven SW propagation for nanomagnonics, SW logic, and neuromorphic computing, directly compatible with CMOS technology.

| S-EPMC6868678 | biostudies-literature

Field-free spin-orbit torque switching in ferromagnetic trilayers at sub-ns timescales.

Project description:Current-induced spin torques enable the electrical control of the magnetization with low energy consumption. Conventional magnetic random access memory (MRAM) devices rely on spin-transfer torque (STT), this however limits MRAM applications because of the nanoseconds incubation delay and associated endurance issues. A potential alternative to STT is spin-orbit torque (SOT). However, for practical, high-speed SOT devices, it must satisfy three conditions simultaneously, i.e., field-free switching at short current pulses, short incubation delay, and low switching current. Here, we demonstrate field-free SOT switching at sub-ns timescales in a CoFeB/Ti/CoFeB ferromagnetic trilayer, which satisfies all three conditions. In this trilayer, the bottom magnetic layer or its interface generates spin currents with polarizations in both in-plane and out-of-plane components. The in-plane component reduces the incubation time, while the out-of-plane component realizes field-free switching at a low current. Our results offer a field-free SOT solution for energy-efficient scalable MRAM applications.

| S-EPMC10901790 | biostudies-literature

Reducing Dzyaloshinskii-Moriya interaction and field-free spin-orbit torque switching in synthetic antiferromagnets.

Project description:Perpendicularly magnetized synthetic antiferromagnets (SAF), possessing low net magnetization and high thermal stability as well as easy reading and writing characteristics, have been intensively explored to replace the ferromagnetic free layers of magnetic tunnel junctions as the kernel of spintronic devices. So far, utilizing spin-orbit torque (SOT) to realize deterministic switching of perpendicular SAF have been reported while a large external magnetic field is typically needed to break the symmetry, making it impractical for applications. Here, combining theoretic analysis and experimental results, we report that the effective modulation of Dzyaloshinskii-Moriya interaction by the interfacial crystallinity between ferromagnets and adjacent heavy metals plays an important role in domain wall configurations. By adjusting the domain wall configuration between Bloch type and Néel type, we successfully demonstrate the field-free SOT-induced magnetization switching in [Co/Pd]/Ru/[Co/Pd] SAF devices constructed with a simple wedged structure. Our work provides a practical route for utilization of perpendicularly SAF in SOT devices and paves the way for magnetic memory devices with high density, low stray field, and low power consumption.

| S-EPMC8149869 | biostudies-literature

Spin-orbit torque-assisted switching in magnetic insulator thin films with perpendicular magnetic anisotropy.

Project description:As an in-plane charge current flows in a heavy metal film with spin-orbit coupling, it produces a torque on and thereby switches the magnetization in a neighbouring ferromagnetic metal film. Such spin-orbit torque (SOT)-induced switching has been studied extensively in recent years and has shown higher efficiency than switching using conventional spin-transfer torque. Here we report the SOT-assisted switching in heavy metal/magnetic insulator systems. The experiments used a Pt/BaFe12O19 bilayer where the BaFe12O19 layer exhibits perpendicular magnetic anisotropy. As a charge current is passed through the Pt film, it produces a SOT that can control the up and down states of the remnant magnetization in the BaFe12O19 film when the film is magnetized by an in-plane magnetic field. It can reduce or increase the switching field of the BaFe12O19 film by as much as about 500 Oe when the film is switched with an out-of-plane field.

| S-EPMC5025772 | biostudies-literature

Ultrahigh efficient spin orbit torque magnetization switching in fully sputtered topological insulator and ferromagnet multilayers.

Project description:Spin orbit torque (SOT) magnetization switching of ferromagnets with large perpendicular magnetic anisotropy has a great potential for the next generation non-volatile magnetoresistive random-access memory (MRAM). It requires a high performance pure spin current source with a large spin Hall angle and high electrical conductivity, which can be fabricated by a mass production technique. In this work, we demonstrate ultrahigh efficient and robust SOT magnetization switching in fully sputtered BiSb topological insulator and perpendicularly magnetized Co/Pt multilayers. Despite fabricated by the magnetron sputtering instead of the laboratory molecular beam epitaxy, the topological insulator layer, BiSb, shows a large spin Hall angle of θSH = 10.7 and high electrical conductivity of σ = 1.5 × 105 Ω-1 m-1. Our results demonstrate the feasibility of BiSb topological insulator for implementation of ultralow power SOT-MRAM and other SOT-based spintronic devices.

| S-EPMC8863830 | biostudies-literature

Field-Free Spin-Orbit Torque Driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current.

Project description:Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making them attractive for memory, in-memory computing, and logic applications. However, the requirement of the external magnetic field to achieve deterministic switching in perpendicularly magnetized SOT-MTJs limits its implementation for practical applications. Here, we introduce a field-free switching (FFS) solution for the SOT-MTJ device by shaping the SOT channel to create a "bend" in the SOT current. The resulting bend in the charge current creates a spatially nonuniform spin current, which translates into inhomogeneous SOT on an adjacent magnetic free layer enabling deterministic switching. We demonstrate FFS experimentally on scaled SOT-MTJs at nanosecond time scales. This proposed scheme is scalable, material-agnostic, and readily compatible with wafer-scale manufacturing, thus creating a pathway for developing purely current-driven SOT systems.

| S-EPMC10311595 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data