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Universal light-guiding geometry for on-chip resonators having extremely high Q-factor.


ABSTRACT: By providing an effective way to leverage nonlinear phenomena in integrated devices, high-Q optical resonators have led to recent advances in on-chip photonics. However, developing fabrication processes to shape any new material into a resonator with extremely smooth surfaces on a chip has been an exceptionally challenging task. Here, we describe a universal method to implement ultra-high-Q resonators with any new material having desirable properties that can be deposited by physical vapor deposition. Using this method light-guiding cores with surface roughness on the molecular-scale are created automatically on pre-patterned substrates. Its efficacy has been verified using As2S3, a chalcogenide glass that has high-nonlinearity. The Q-factor of the As2S3 resonator so-developed approached the propagation loss record achieved in chalcogenide fibers which were limited by material losses. Owing to the boosted Q-factor, lasing by stimulated Brillouin scattering has been demonstrated with 100 times lower threshold power than the previous record.

SUBMITTER: Kim DG 

PROVIDER: S-EPMC7683556 | biostudies-literature | 2020 Nov

REPOSITORIES: biostudies-literature

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Universal light-guiding geometry for on-chip resonators having extremely high Q-factor.

Kim Dae-Gon DG   Han Sangyoon S   Hwang Joonhyuk J   Do In Hwan IH   Jeong Dongin D   Lim Ji-Hun JH   Lee Yong-Hoon YH   Choi Muhan M   Lee Yong-Hee YH   Choi Duk-Yong DY   Lee Hansuek H  

Nature communications 20201123 1


By providing an effective way to leverage nonlinear phenomena in integrated devices, high-Q optical resonators have led to recent advances in on-chip photonics. However, developing fabrication processes to shape any new material into a resonator with extremely smooth surfaces on a chip has been an exceptionally challenging task. Here, we describe a universal method to implement ultra-high-Q resonators with any new material having desirable properties that can be deposited by physical vapor depos  ...[more]

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