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Atomic threshold-switching enabled MoS2 transistors towards ultralow-power electronics.


ABSTRACT: Power dissipation is a fundamental issue for future chip-based electronics. As promising channel materials, two-dimensional semiconductors show excellent capabilities of scaling dimensions and reducing off-state currents. However, field-effect transistors based on two-dimensional materials are still confronted with the fundamental thermionic limitation of the subthreshold swing of 60?mV decade-1 at room temperature. Here, we present an atomic threshold-switching field-effect transistor constructed by integrating a metal filamentary threshold switch with a two-dimensional MoS2 channel, and obtain abrupt steepness in the turn-on characteristics and 4.5?mV decade-1 subthreshold swing (over five decades). This is achieved by using the negative differential resistance effect from the threshold switch to induce an internal voltage amplification across the MoS2 channel. Notably, in such devices, the simultaneous achievement of efficient electrostatics, very small sub-thermionic subthreshold swings, and ultralow leakage currents, would be highly desirable for next-generation energy-efficient integrated circuits and ultralow-power applications.

SUBMITTER: Hua Q 

PROVIDER: S-EPMC7719160 | biostudies-literature | 2020 Dec

REPOSITORIES: biostudies-literature

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Atomic threshold-switching enabled MoS<sub>2</sub> transistors towards ultralow-power electronics.

Hua Qilin Q   Gao Guoyun G   Jiang Chunsheng C   Yu Jinran J   Sun Junlu J   Zhang Taiping T   Gao Bin B   Cheng Weijun W   Liang Renrong R   Qian He H   Hu Weiguo W   Sun Qijun Q   Wang Zhong Lin ZL   Wu Huaqiang H  

Nature communications 20201204 1


Power dissipation is a fundamental issue for future chip-based electronics. As promising channel materials, two-dimensional semiconductors show excellent capabilities of scaling dimensions and reducing off-state currents. However, field-effect transistors based on two-dimensional materials are still confronted with the fundamental thermionic limitation of the subthreshold swing of 60 mV decade<sup>-1</sup> at room temperature. Here, we present an atomic threshold-switching field-effect transisto  ...[more]

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