Unknown

Dataset Information

0

Crystal orientation dictated epitaxy of ultrawide-bandgap 5.4- to 8.6-eV ?-(AlGa)2O3 on m-plane sapphire.

ABSTRACT: Ultrawide-bandgap semiconductors are ushering in the next generation of high-power electronics. The correct crystal orientation can make or break successful epitaxy of such semiconductors. Here, it is found that single-crystalline layers of ?-(AlGa)2O3 alloys spanning bandgaps of 5.4 to 8.6 eV can be grown by molecular beam epitaxy. The key step is found to be the use of m-plane sapphire crystal. The phase transition of the epitaxial layers from the ?- to the narrower bandgap ?-phase is catalyzed by the c-plane of the crystal. Because the c-plane is orthogonal to the growth front of the m-plane surface of the crystal, the narrower bandgap pathways are eliminated, revealing a route to much wider bandgap materials with structural purity. The resulting energy bandgaps of the epitaxial layers span a broad range, heralding the successful epitaxial stabilization of the largest bandgap materials family to date.

SUBMITTER: Jinno R 

PROVIDER: S-EPMC7793576 | biostudies-literature | 2021 Jan

REPOSITORIES: biostudies-literature

Json Xml
altmetric image

Publications

Crystal orientation dictated epitaxy of ultrawide-bandgap 5.4- to 8.6-eV α-(AlGa)<sub>2</sub>O<sub>3</sub> on m-plane sapphire.

Jinno Riena R   Chang Celesta S CS   Onuma Takeyoshi T   Cho Yongjin Y   Ho Shao-Ting ST   Rowe Derek D   Cao Michael C MC   Lee Kevin K   Protasenko Vladimir V   Schlom Darrell G DG   Muller David A DA   Xing Huili G HG   Jena Debdeep D  

Science advances 20210108 2

Ultrawide-bandgap semiconductors are ushering in the next generation of high-power electronics. The correct crystal orientation can make or break successful epitaxy of such semiconductors. Here, it is found that single-crystalline layers of α-(AlGa)<sub>2</sub>O<sub>3</sub> alloys spanning bandgaps of 5.4 to 8.6 eV can be grown by molecular beam epitaxy. The key step is found to be the use of m-plane sapphire crystal. The phase transition of the epitaxial layers from the α- to the narrower bandg  ...[more]

Similar Datasets

Unknown Tungsten Oxide Mediated Quasi-van der Waals Epitaxy of WS<sub>2</sub> on Sapphire.
| S-EPMC10062024 | biostudies-literature
Unknown Electronic states of deep trap levels in a-plane GaN templates grown on r-plane sapphire by HVPE.
| S-EPMC5959929 | biostudies-literature
Unknown Ten-Second Epitaxy of Cu on Repeatedly Used Sapphire for Practical Production of High-Quality Graphene.
| S-EPMC6641493 | biostudies-literature
Unknown Layer matching epitaxy of NiO thin films on atomically stepped sapphire (0001) substrates.
| S-EPMC4585880 | biostudies-other
Unknown In-Plane Nanowires with Arbitrary Shapes on Amorphous Substrates by Artificial Epitaxy.
| S-EPMC6994061 | biostudies-literature
Unknown Selective-Area Epitaxy of InGaAsP Buffer Multilayer for In-Plane InAs Nanowire Integration.
| S-EPMC8999517 | biostudies-literature
Unknown Environmentally friendly method to grow wide-bandgap semiconductor aluminum nitride crystals: Elementary source vapor phase epitaxy.
| S-EPMC4663762 | biostudies-literature
Unknown Spatially resolved and orientation dependent Raman mapping of epitaxial lateral overgrowth nonpolar a-plane GaN on r-plane sapphire.
| S-EPMC4731808 | biostudies-other
Unknown Reduction of Defects in AlGaN Grown on Nanoscale-Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy.
| S-EPMC5553422 | biostudies-other
Unknown Structural and surface characterizations of 2D β-In2Se3/3D β-Ga2O3 heterostructures grown on c-Sapphire substrates by molecular beam epitaxy
| S-EPMC10907755 | biostudies-literature