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Environmentally friendly method to grow wide-bandgap semiconductor aluminum nitride crystals: Elementary source vapor phase epitaxy.

ABSTRACT: Aluminum nitride (AlN) has attracted increasing interest as an optoelectronic material in the deep ultraviolet spectral range due to its wide bandgap of 6.0?eV (207?nm wavelength) at room temperature. Because AlN bulk single crystals are ideal device substrates for such applications, the crystal growth of bulky AlN has been extensively studied. Two growth methods seem especially promising: hydride vapor phase epitaxy (HVPE) and sublimation. However, the former requires hazardous gases such as hydrochloric acid and ammonia, while the latter needs extremely high growth temperatures around 2000?°C. Herein we propose a novel vapor-phase-epitaxy-based growth method for AlN that does not use toxic materials; the source precursors are elementary aluminum and nitrogen gas. To prepare our AlN, we constructed a new growth apparatus, which realizes growth of AlN single crystals at a rate of ~18 ?m/h at 1550?°C using argon as the source transfer via the simple reaction Al?+?1/2N2 ? AlN. This growth rate is comparable to that by HVPE, and the growth temperature is much lower than that in sublimation. Thus, this study opens up a novel route to achieve environmentally friendly growth of AlN.

SUBMITTER: Wu P

PROVIDER: S-EPMC4663762 | biostudies-literature | 2015 Nov

REPOSITORIES: biostudies-literature

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Environmentally friendly method to grow wide-bandgap semiconductor aluminum nitride crystals: Elementary source vapor phase epitaxy.

Wu PeiTsen P Funato Mitsuru M Kawakami Yoichi Y

Scientific reports 20151130

Aluminum nitride (AlN) has attracted increasing interest as an optoelectronic material in the deep ultraviolet spectral range due to its wide bandgap of 6.0 eV (207 nm wavelength) at room temperature. Because AlN bulk single crystals are ideal device substrates for such applications, the crystal growth of bulky AlN has been extensively studied. Two growth methods seem especially promising: hydride vapor phase epitaxy (HVPE) and sublimation. However, the former requires hazardous gases such as hy ...[more]

PMID: 26616203

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Project description:The use of micro-/nanoelectromechanical resonators for the room temperature detection of electromagnetic radiation at infrared frequencies has recently been investigated, showing thermal detection capabilities that could potentially outperform conventional microbolometers. The scaling of the device thickness in the nanometer range and the achievement of high infrared absorption in such a subwavelength thickness, without sacrificing the electromechanical performance, are the two key challenges for the implementation of fast, high-resolution micro-/nanoelectromechanical resonant infrared detectors. In this paper, we show that by using a virtually massless, high-electrical-conductivity, and transparent graphene electrode, floating at the van der Waals separation of a few angstroms from a piezoelectric aluminum nitride nanoplate, it is possible to implement ultrathin (460 nm) piezoelectric nanomechanical resonant structures with improved electromechanical performance (>50% improved frequency×quality factor) and infrared detection capabilities (>100× improved infrared absorptance) compared with metal-electrode counterparts, despite their reduced volumes. The intrinsic infrared absorption capabilities of a submicron thin graphene-aluminum nitride plate backed with a metal electrode are investigated for the first time and exploited for the first experimental demonstration of a piezoelectric nanoelectromechanical resonant thermal detector with enhanced infrared absorptance in a reduced volume. Moreover, the combination of electromagnetic and piezoelectric resonances provided by the same graphene-aluminum nitride-metal stack allows the proposed device to selectively detect short-wavelength infrared radiation (by tailoring the thickness of aluminum nitride) with unprecedented electromechanical performance and thermal capabilities. These attributes potentially lead to the development of uncooled infrared detectors suitable for the implementation of high performance, miniaturized and power-efficient multispectral infrared imaging systems.

Dataset Information

Environmentally friendly method to grow wide-bandgap semiconductor aluminum nitride crystals: Elementary source vapor phase epitaxy.

Publications

Environmentally friendly method to grow wide-bandgap semiconductor aluminum nitride crystals: Elementary source vapor phase epitaxy.

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