NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe₂ heterojunction diode.

ABSTRACT: Two-dimensional (2D) heterostructure with atomically sharp interface holds promise for future electronics and optoelectronics because of their multi-functionalities. Here we demonstrate gate-tunable rectifying behavior and self-powered photovoltaic characteristics of novel p-GeSe/n-MoSe₂ van der waal heterojunction (vdW HJ). A substantial increase in rectification behavior was observed when the devices were subjected to gate bias. The highest rectification of?~?1?×?10⁴ was obtained at V_g?=?- 40 V. Remarkable rectification behavior of the p-n diode is solely attributed to the sharp interface between metal and GeSe/MoSe₂. The device exhibits a high photoresponse towards NIR (850 nm). A high photoresponsivity of 465 mAW^-1, an excellent EQE of 670%, a fast rise time of 180 ms, and a decay time of 360 ms were obtained. Furthermore, the diode exhibits detectivity (D) of 7.3?×?10⁹ Jones, the normalized photocurrent to the dark current ratio (NPDR) of 1.9?×?10¹⁰ W^-1, and the noise equivalent power (NEP) of 1.22?×?10^-13 WHz^-1/2. The strong light-matter interaction stipulates that the GeSe/MoSe₂ diode may open new realms in multi-functional electronics and optoelectronics applications.

SUBMITTER: Hussain M 

PROVIDER: S-EPMC7878902 | biostudies-literature | 2021 Feb

REPOSITORIES: biostudies-literature