Reversible Half Wave Rectifier Based on 2D InSe/GeSe Heterostructure with Near-Broken Band Alignment.

ABSTRACT: 2D van der Waals heterostructures (vdWHs) offer tremendous opportunities in designing multifunctional electronic devices. Due to the ultrathin nature of 2D materials, the gate-induced change in charge density makes amplitude control possible, creating a new programmable unilateral rectifier. The study of 2D vdWHs-based reversible unilateral rectifier is lacking, although it can give rise to a new degree of freedom for modulating the output state. Here, a InSe/GeSe vdWH-FET is constructed as a gate-controllable half wave rectifier. The device exhibits stepless adjustment from forward to backward rectifying performance, leading to multiple operation states of output level. Near-broken band alignment in the InSe/GeSe vdWH-FET is a crucial feature for high-performance reversible rectifier, whi

SUBMITTER: Yan Y 

PROVIDER: S-EPMC7887575 | biostudies-literature | 2021 Feb

REPOSITORIES: biostudies-literature