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Phase characterisation of metalenses.

ABSTRACT: Metalenses have emerged as a new optical element or system in recent years, showing superior performance and abundant applications. However, the phase distribution of a metalens has not been measured directly up to now, hindering further quantitative evaluation of its performance. We have developed an interferometric imaging phase measurement system to measure the phase distribution of a metalens by taking only one photo of the interference pattern. Based on the measured phase distribution, we analyse the negative chromatic aberration effect of monochromatic metalenses and propose a feature size of metalenses. Different sensitivities of the phase response to wavelength between the Pancharatnam-Berry phase-based metalens and propagation phase-reliant metalens are directly observed in the experiment. Furthermore, through phase distribution analysis, it is found that the distance between the measured metalens and the brightest spot of focusing will deviate from the focal length when the metalens has a low nominal numerical aperture, even though the metalens is ideal without any fabrication error. We also use the measured phase distribution to quantitatively characterise the imaging performance of the metalens. Our phase measurement system will help not only designers optimise the designs of metalenses but also fabricants distinguish defects to improve the fabrication process, which will pave the way for metalenses in industrial applications.

SUBMITTER: Zhao M

PROVIDER: S-EPMC7947014 | biostudies-literature |

REPOSITORIES: biostudies-literature

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Project description:The growth of wide-bandgap materials on patterned substrates has revolutionized the means with which we can improve the light output power of gallium nitride (GaN) light-emitting diodes (LEDs). Conventional patterned structure inspection usually relies on an expensive vacuum-system-required scanning electron microscope (SEM) or optical microscope (OM) with bulky objectives. On the other hand, ultra-thin metasurfaces have been widely used in widespread applications, especially for converging lenses. In this study, we propose newly developed, highly efficient hexagon-resonated elements (HREs) combined with gingerly selected subwavelength periods of the elements for the construction of polarization-insensitive metalenses of high performance. Also, the well-developed fabrication techniques have been employed to realize the high-aspect-ratio metalenses working at three distinct wavelengths of 405, 532, and 633 nm with respective diffraction-limited focusing efficiencies of 93%, 86%, and 92%. The 1951 United States Air Force (USAF) test chart has been chosen to characterize the imaging capability. All of the images formed by the 405-nm-designed metalens show exceptional clear line features, and the smallest resolvable features are lines with widths of 870 nm. To perform the inspection capacity for patterned substrates, for the proof of concept, a commercially available patterned sapphire substrate (PSS) for the growth of the GaN LEDs has been opted and carefully examined by the high-resolution SEM system. With the appropriately chosen metalenses at the desired wavelength, the summits of structures in the PSS can be clearly observed in the images. The PSS imaging qualities taken by the ultra-thin and light-weight metalenses with a numerical aperture (NA) of 0.3 are comparable to those seen by an objective with the NA of 0.4. This work can pioneer semiconductor manufacturing to choose the polarization-insensitive GaN metalenses to inspect the patterned structures instead of using the SEM or the bulky and heavy conventional objectives.

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Phase characterisation of metalenses.

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