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Implementing Dopant-Free Hole-Transporting Layers and Metal-Incorporated CsPbI₂Br for Stable All-Inorganic Perovskite Solar Cells.

ABSTRACT: Mixed-halide CsPbI₂Br perovskite is promising for efficient and thermally stable all-inorganic solar cells; however, the use of conventional antisolvent methods and additives-based hole-transporting layers (HTLs) currently hampers progress. Here, we have employed hot-air-assisted perovskite deposition in ambient condition to obtain high-quality photoactive CsPbI₂Br perovskite films and have extended stable device operation using metal cation doping and dopant-free hole-transporting materials. Density functional theory calculations are used to study the structural and optoelectronic properties of the CsPbI₂Br perovskite when it is doped with metal cations Eu²⁺ and In³⁺. We experimentally incorporated Eu²⁺ and In³⁺ metal ions into CsPbI₂Br films and applied dopant-free copper(I) thiocyanate (CuSCN) and poly(3-hexylthiophene) (P3HT)-based materials as low-cost hole transporting layers, leading to record-high power conversion efficiencies of 15.27% and 15.69%, respectively, and a retention of >95% of the initial efficiency over 1600 h at 85 °C thermal stress.

SUBMITTER: Mali SS

PROVIDER: S-EPMC8018314 | biostudies-literature |

REPOSITORIES: biostudies-literature

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