Browse
Submit Data
Databases
API
Help

Dataset Information

17 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Interfacial Doping Effects in Fluoropolymer-Tungsten Diselenide Composites Providing High-Performance P-Type Transistors.

ABSTRACT: In this study, we investigated the p-doping effects of a fluoropolymer, Cytop, on tungsten diselenides (WSe₂). The hole current of the Cytop-WSe₂ field-effect transistor (FET) was boosted by the C-F bonds of Cytop having a strong dipole moment, enabling increased hole accumulation. Analysis of the observed p-doping effects using atomic force microscopy (AFM) and Raman spectroscopy shed light on the doping mechanism. Moreover, Cytop reduces the electrical instability by preventing the adsorption of ambient molecules on the WSe₂ surface. Annealing Cytop deposited on WSe₂ eliminated the possible impurities associated with adsorbates (i.e., moisture and oxygen) that act as traps on the surface of WSe₂. After thermal annealing, the Cytop-WSe₂ FET afforded higher p-type conductivity and reduced hysteresis. The combination of the Cytop-WSe₂ FET with annealing provides a promising method for obtaining high-performance WSe₂ p-type transistors.

SUBMITTER: Lee H

PROVIDER: S-EPMC8037493 | biostudies-literature |

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Similar Datasets

Rhenium Diselenide (ReSe2) Near-Infrared Photodetector: Performance Enhancement by Selective p-Doping Technique.

Project description:In this study, a near-infrared photodetector featuring a high photoresponsivity and a short photoresponse time is demonstrated, which is fabricated on rhenium diselenide (ReSe2) with a relatively narrow bandgap (0.9-1.0 eV) compared to conventional transition-metal dichalcogenides (TMDs). The excellent photo and temporal responses, which generally show a trade-off relation, are achieved simultaneously by applying a p-doping technique based on hydrochloric acid (HCl) to a selected ReSe2 region. Because the p-doping of ReSe2 originates from the charge transfer from un-ionized Cl molecules in the HCl to the ReSe2 surface, by adjusting the concentration of the HCl solution from 0.1 to 10 m, the doping concentration of the ReSe2 is controlled between 3.64 × 1010 and 3.61 × 1011 cm-2. Especially, the application of the selective HCl doping technique to the ReSe2 photodetector increases the photoresponsivity from 79.99 to 1.93 × 103 A W-1, and it also enhances the rise and decay times from 10.5 to 1.4 ms and from 291 to 3.1 ms, respectively, compared with the undoped ReSe2 device. The proposed selective p-doping technique and its fundamental analysis will provide a scientific foundation for implementing high-performance TMD-based electronic and optoelectronic devices.

| S-EPMC6839648 | biostudies-literature

Material Synthesis and Device Aspects of Monolayer Tungsten Diselenide.

Project description:In this paper, we investigate the synthesis of WSe2 by chemical vapor deposition and study the current transport and device scaling of monolayer WSe2. We found that the device characteristics of the back-gated WSe2 transistors with thick oxides are very sensitive to the applied drain bias, especially for transistors in the sub-micrometer regime. The threshold voltage, subthreshold swing, and extracted field-effect mobility vary with the applied drain bias. The output characteristics in the long-channel transistors show ohmic-like behavior, while that in the short-channel transistors show Schottky-like behavior. Our investigation reveals that these phenomena are caused by the drain-induced barrier lowering (short-channel effect). For back-gated WSe2 transistors with 280?nm oxide, the short-channel effect appears when the channel length is shorter than 0.4?µm. This extremely long electrostatic scaling length is due to the thick back-gate oxides. In addition, we also found that the hydrogen flow rate and the amount of WO3 precursor play an important role in the morphology of the WSe2. The hole mobility of the monolayer WSe2 is limited by Columbic scattering below 250?K, while it is limited by phonon scattering above 250?K. These findings are very important for the synthesis of WSe2 and accurate characterization of the electronic devices based on 2D materials.

| S-EPMC5869716 | biostudies-literature

Interfacial piezoelectric polarization locking in printable Ti3C2Tx MXene-fluoropolymer composites.

Project description:Piezoelectric fluoropolymers convert mechanical energy to electricity and are ideal for sustainably providing power to electronic devices. To convert mechanical energy, a net polarization must be induced in the fluoropolymer, which is currently achieved via an energy-intensive electrical poling process. Eliminating this process will enable the low-energy production of efficient energy harvesters. Here, by combining molecular dynamics simulations, piezoresponse force microscopy, and electrodynamic measurements, we reveal a hitherto unseen polarization locking phenomena of poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) perpendicular to the basal plane of two-dimensional (2D) Ti3C2Tx MXene nanosheets. This polarization locking, driven by strong electrostatic interactions enabled exceptional energy harvesting performance, with a measured piezoelectric charge coefficient, d33, of -52.0 picocoulombs per newton, significantly higher than electrically poled PVDF-TrFE (approximately -38 picocoulombs per newton). This study provides a new fundamental and low-energy input mechanism of poling fluoropolymers, which enables new levels of performance in electromechanical technologies.

| S-EPMC8155213 | biostudies-literature

Pursuing Polymer Dielectric Interfacial Effect in Organic Transistors for Photosensing Performance Optimization.

Project description:Polymer dielectrics in organic field-effect transistors (OFETs) are essential to provide the devices with overall flexibility, stretchability, and printability and simultaneously introduce charge interaction on the interface with organic semiconductors (OSCs). The interfacial effect between various polymer dielectrics and OSCs significantly and intricately influences device performance. However, understanding of this effect is limited because the interface is buried and the interfacial charge interaction is difficult to stimulate and characterize. Here, this challenge is overcome by utilizing illumination to stimulate the interfacial effect in various OFETs and to characterize the responses of the effect by measuring photoinduced changes of the OFETs performances. This systemic investigation reveals the mechanism of the intricate interfacial effect in detail, and mathematically explains how the photosensitive OFETs characteristics are determined by parameters including polar group of the polymer dielectric and the OSC side chain. By utilizing this mechanism, performance of organic electronics can be precisely controlled and optimized. OFETs with strong interfacial effect can also show a signal additivity caused by repeated light pulses, which is applicable for photostimulated synapse emulator. Therefore, this work enlightens a detailed understanding on the interface effect and provides novel strategies for optimizing OFET photosensory performances.

| S-EPMC5737237 | biostudies-literature

Boosting the Piezoelectric Response and Interfacial Compatibility in Flexible Piezoelectric Composites via DET-Doping BT Nanoparticles.

Project description:With the advent of the Internet of Things, self-powered wearable sensors have become increasingly prevalent in our daily lives. The utilization of piezoelectric composites to harness and sense surrounding mechanical vibrations has been extensively investigated during the last decades. However, the poor interface compatibility between ceramics nanofillers and polymers matrix, as well as low piezoelectric performance, still serves as a critical challenge. In this work, we employed Di(dioctylpyrophosphato) ethylene titanate (DET) as the coupling agent for modifying barium titanate (BTO) nanofillers. Compared to the BTO/PVDF counterpart, the DET-BTO/PVDF nanofibers exhibit an augmented content of piezoelectric β phase (~85.7%) and significantly enhanced stress transfer capability. The piezoelectric coefficient (d33) is up to ~40 pC/N, which is the highest value among reported BTO/PVDF composites. The piezoelectric energy harvesters (PEHs) present benign durability and attain a high instantaneous power density of 276.7 nW/cm2 at a matched load of 120 MΩ. Furthermore, the PEHs could sense various human activities, with the sensitivity as high as 0.817 V/N ranging from 0.05-0.1 N. This work proposes a new strategy to boosting the piezoelectric performance of PVDF-based composites via DET-doping ceramics nanoparticles, and in turn show significantly improved energy harvesting and sensing capability.

| S-EPMC10974266 | biostudies-literature

Observation of intervalley quantum interference in epitaxial monolayer tungsten diselenide.

Project description:The extraordinary electronic structures of monolayer transition metal dichalcogenides, such as the spin-valley-coupled band edges, have sparked great interest for potential spintronic and valleytronic applications based on these two-dimensional materials. In this work, we report the experimental observation of quasi-particle interference patterns in monolayer WSe2 using low-temperature scanning tunnelling spectroscopy. We observe intervalley quantum interference involving the Q valleys in the conduction band due to spin-conserving scattering processes, while spin-flipping intervalley scattering is absent. Our results establish unequivocally the presence of spin-valley coupling and affirm the large spin splitting at the Q valleys. Importantly, the inefficient spin-flipping scattering implies long valley and spin lifetime in monolayer WSe2, which is a key figure of merit for valley-spintronic applications.

| S-EPMC4569794 | biostudies-literature

Giant photoluminescence enhancement in tungsten-diselenide-gold plasmonic hybrid structures.

Project description:Impressive properties arise from the atomically thin nature of transition metal dichalcogenide two-dimensional materials. However, being atomically thin limits their optical absorption or emission. Hence, enhancing their photoluminescence by plasmonic nanostructures is critical for integrating these materials in optoelectronic and photonic devices. Typical photoluminescence enhancement from transition metal dichalcogenides is 100-fold, with recent enhancement of 1,000-fold achieved by simultaneously enhancing absorption, emission and directionality of the system. By suspending WSe2 flakes onto sub-20-nm-wide trenches in gold substrate, we report a giant photoluminescence enhancement of ∼20,000-fold. It is attributed to an enhanced absorption of the pump laser due to the lateral gap plasmons confined in the trenches and the enhanced Purcell factor by the plasmonic nanostructure. This work demonstrates the feasibility of giant photoluminescence enhancement in WSe2 with judiciously designed plasmonic nanostructures and paves a way towards the implementation of plasmon-enhanced transition metal dichalcogenide photodetectors, sensors and emitters.

| S-EPMC4859068 | biostudies-literature

Photoinduced edge-specific nanoparticle decoration of two-dimensional tungsten diselenide nanoribbons.

Project description:Metallic nanoparticles are widely explored for boosting light-matter coupling, optoelectronic response, and improving photocatalytic performance of two-dimensional (2D) materials. However, the target area is restricted to either top or bottom of the 2D flakes. Here, we introduce an approach for edge-specific nanoparticle decoration via light-assisted reduction of silver ions and merging of silver seeds. We observe arrays of the self-limited in size silver nanoparticles along tungsten diselenide WSe2 nanoribbon edges. The density of nanoparticles is tunable by adjusting the laser fluence. Scanning electron microscopy, atomic force microscopy, and Raman spectroscopy are used to investigate the size, distribution, and photo-response of the deposited plasmonic nanoparticles on the quasi-one-dimensional nanoribbons. We report an on-surface synthesis path for creating mixed-dimensional heterostructures and heterojunctions with potential applications in opto-electronics, plasmonics, and catalysis, offering improved light matter coupling, optoelectronics response, and photocatalytic performance of 2D materials.

| S-EPMC10425467 | biostudies-literature

Enhancing the Electrochemical Performance of Ni-Rich LiNi0.88Co0.09Al0.03O2 Cathodes through Tungsten-Doping for Lithium-Ion Batteries.

Project description:The tungsten-doped (0.5 and 1.0 mol%) LiNi0.88Co0.09Al0.03O2 (NCA) cathode materials are manufactured to systematically examine the stabilizing effect of W-doping. The 1.0 mol% W-doped LiNi0.88Co0.09Al0.03O2 (W1.0-NCA) cathodes deliver 173.5 mAh g-1 even after 100 cycles at 1 C, which is 95.2% of the initial capacity. While the capacity retention of NCA cathodes cycled in identical conditions is 86.3%. The optimal performances of the W1.0-NCA could be ascribed to the suppression of impendence increase and the decrease in anisotropic volume change, as well as preventing the collapse of structures during cycling. These findings demonstrate that the W-doping considerably enhances the electrochemical performance of NCA, which has potential applications in the development of Ni-rich layered cathode materials that can display high capacity with superior cycling stability.

| S-EPMC8912114 | biostudies-literature

Improved contacts to p-type MoS2 transistors by charge-transfer doping and contact engineering.

Project description:MoS2 is known to show stubborn n-type behavior due to its intrinsic band structure and Fermi level pinning. Here, we investigate the combined effects of molecular doping and contact engineering on the transport and contact properties of monolayer (ML) MoS2 devices. Significant p-type (hole-transport) behavior was only observed for chemically doped MoS2 devices with high work function palladium (Pd) contacts, while MoS2 devices with low work function metal contacts made from titanium showed ambipolar behavior with electron transport favored even after prolonged p-doping treatment. ML MoS2 transistors with Pd contacts exhibit effective hole mobilities of (2.3 ± 0.7) cm2 V-1 S-1 and an on/off ratio exceeding 106. We also show that p-doping can help to improve electrical contacts in p-type field-effect transistors: relatively low contact resistances of (482 ± 40) kΩ μm and a Schottky barrier height of ≈156 meV were obtained for ML MoS2 transistors. To demonstrate the potential application of 2D-based complementary electronic devices, a MoS2 inverter based on pristine (n-type) and p-doped monolayer MoS2 was fabricated. This work presents a simple and effective route for contact engineering, which enables the exploration and development of high-efficiency 2D-based semiconductor devices.

| S-EPMC7047721 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data