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A robust nitridation technique for fabrication of disordered superconducting TiN thin films featuring phase slip events.

ABSTRACT: Disorder induced phase slip (PS) events appearing in the current voltage characteristics (IVCs) are reported for two-dimensional TiN thin films produced by a robust substrate mediated nitridation technique. Here, high temperature annealing of Ti/Si₃N₄ based metal/substrate assembly is the key to produce majority phase TiN accompanied by TiSi₂ & elemental Si as minority phases. The method itself introduces different level of disorder intrinsically by tuning the amount of the non-superconducting minority phases that are controlled by annealing temperature (T_a) and the film thickness. The superconducting critical temperature (T_c) strongly depends on T_a and the maximum T_c obtained from the demonstrated technique is about 4.8 K for the thickness range ~ 12 nm and above. Besides, the dynamics of IVCs get modulated by the appearance of intermediated resistive steps for decreased T_a and the steps get more prominent for reduced thickness. Further, the deviation in the temperature dependent critical current (I_c) from the Ginzburg-Landau theoretical limit varies strongly with the thickness. Finally, the T_c, intermediate resistive steps in the IVCs and the depairing current are observed to alter in a similar fashion with T_a and the thickness indicating the robustness of the synthesis process to fabricate disordered nitride-based superconductor.

SUBMITTER: Yadav S

PROVIDER: S-EPMC8042045 | biostudies-literature |

REPOSITORIES: biostudies-literature

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