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Fabrication of GaN nano-towers based self-powered UV photodetector.

ABSTRACT: The fabrication of unique taper-ended GaN-Nanotowers structure based highly efficient ultraviolet photodetector is demonstrated. Hexagonally stacked, single crystalline GaN nanocolumnar structure (nanotowers) grown on AlN buffer layer exhibits higher photocurrent generation due to high quality nanotowers morphology and increased surface/volume ratio which significantly enhances its responsivity upon ultraviolet exposure leading to outstanding performance from the developed detection device. The fabricated detector display low dark current (~ 12 nA), high I_Light/I_Dark ratio (> 10⁴), fast time-correlated transient response (~ 433 µs) upon ultraviolet (325 nm) illumination. A high photoresponsivity of 2.47 A/W is achieved in self-powered mode of operation. The reason behind such high performance could be attributed to built-in electric field developed from a difference in Schottky barrier heights will be discussed in detail. While in photoconductive mode, the responsivity is observed to be 35.4 A/W @ - 3 V along with very high external quantum efficiency (~ 10⁴%), lower noise equivalent power (~ 10^-13 WHz^-1/2) and excellent UV-Vis selectivity. Nanotower structure with lower strain and dislocations as well as reduced trap states cumulatively contributed to augmented performance from the device. The utilization of these GaN-Nanotower structures can potentially be useful towards the fabrication of energy-efficient ultraviolet photodetectors.

SUBMITTER: Goswami L

PROVIDER: S-EPMC8149650 | biostudies-literature |

REPOSITORIES: biostudies-literature

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Project description:A layer of graphene quantum dots (GQDs) was applied on the photoanode of a self-powered photoelectrochemical (PEC) UV photodetector based on TiO2 nanotubes (NTs). The GQDs layer acted as a dual functional layer and improved the photodetector performance by both UV light absorption and blocking the charge carriers recombination at the photoanode/electrolyte interface. The short circuit current density (Jsc) and thereby the responsivity of the PEC UV photodetector was enhanced by 473%. The highest value of the responsivity in this work obtained for the PEC UV photodetector with the dual functional GQDs layer was as much as 42.5 mA W-1. This value is far better than previously reported responsivities of the PEC devices based on TiO2 NTs as a photoanode. This high responsivity was obtained under the illumination of a very low intensity UV light (365 nm, 2 mW cm-2) and 0 V bias. Moreover, the sensitivity of the PEC UV photodetector with the dual functional GQDs layer has been improved by 345%, which is almost 3.5 times higher compared to the sensitivity of its counterpart without the GQDs coating. The devices with the dual functional GQDs layer present a splendid repeatability and stability. The rise time and the decay time of this device were measured to be 0.73 s and 0.88 s under the on/off switching UV LEDs, respectively. The electrochemical impedance spectroscopy (EIS) results prove the role of the GQDs layer as an effective blocking layer on the photoanode, hindering the charge carrier recombination at the photoanode/electrolyte interface. This study shows that application of the dual functional GQDs layer in the PEC UV photodetector based on TiO2 NTs is an effective approach for improving the responsivity and sensitivity of a self-powered PEC UV PD, which brought us the possibility of detecting low UV index radiation and using the self-powered photodetectors in cutting-edge wearable electronic devices for the aim of health, safety and environmental monitoring.

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Fabrication of GaN nano-towers based self-powered UV photodetector.

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