Project description:This work demonstrates that ions have a strong impact on the growth per cycle (GPC) and material properties during plasma-assisted atomic layer deposition (ALD) of TiO2 (titanium dioxide), even under mild plasma conditions with low-energy (<20 eV) ions. Using vertical trench nanostructures and microscopic cavity structures that locally block the flux of ions, it is observed that the impact of (low-energy) ions is an important factor for the TiO2 film conformality. Specifically, it is demonstrated that the GPC in terms of film thickness can increase by 20 to >200% under the influence of ions, which is correlated with an increase in film crystallinity and an associated strong reduction in the wet etch rate (in 30:1 buffered HF). The magnitude of the influence of ions is observed to depend on multiple parameters such as the deposition temperature, plasma exposure time, and ion energy, which may all be used to minimize or exploit this effect. For example, a relatively moderate influence of ions is observed at 200 °C when using short plasma steps and a grounded substrate, providing a low ion-energy dose of ∼1 eV nm-2 cycle-1, while a high effect is obtained when using extended plasma exposures or substrate biasing (∼100 eV nm-2 cycle-1). This work on TiO2 shows that detailed insight into the role of ions during plasma ALD is essential for precisely controlling the film conformality, material properties, and process reproducibility.
Project description:Carbon nanospheres (CNSs) were prepared by hydrothermal synthesis, and coated with TiO2 and ZnO nanofilms by atomic layer deposition. Subsequently, through burning out the carbon core templates hollow metal oxide nanospheres were obtained. The substrates, the carbon-metal oxide composites and the hollow nanospheres were characterized with TG/DTA-MS, FTIR, Raman, XRD, SEM-EDX, TEM-SAED and their photocatalytic activity was also investigated. The results indicate that CNSs are not beneficial for photocatalysis, but the crystalline hollow metal oxide nanospheres have considerable photocatalytic activity.
Project description:In vitro and in vivo stimulation and recording of neuron action potential is currently achieved with microelectrode arrays, either in planar or 3D geometries, adopting different materials and strategies. IrO2 is a conductive oxide known for its excellent biocompatibility, good adhesion on different substrates, and charge injection capabilities higher than noble metals. Atomic layer deposition (ALD) allows excellent conformal growth, which can be exploited on 3D nanoelectrode arrays. In this work, we disclose the growth of nanocrystalline rutile IrO2 at T = 150 °C adopting a new plasma-assisted ALD (PA-ALD) process. The morphological, structural, physical, chemical, and electrochemical properties of the IrO2 thin films are reported. To the best of our knowledge, the electrochemical characterization of the electrode/electrolyte interface in terms of charge injection capacity, charge storage capacity, and double-layer capacitance for IrO2 grown by PA-ALD was not reported yet. IrO2 grown on PtSi reveals a double-layer capacitance (Cdl) above 300 µF∙cm-2, and a charge injection capacity of 0.22 ± 0.01 mC∙cm-2 for an electrode of 1.0 cm2, confirming IrO2 grown by PA-ALD as an excellent material for neuroelectronic applications.
Project description:TiO2 is a promising environment friendly, low cost, and high electrochemical performance material. However, impediments like high internal ion resistance and low electrical conductivity restrict its applications as electrode for supercapacitor. In the present work, atomic layer deposition was used to fabricate TiO2 nanomembranes (NMs) with accurately controlled thicknesses. The TiO2 NMs were then used as electrodes for high-performance pseudocapacitors. Experimental results demonstrated that the TiO2 NM with 100 ALD cycles had the highest capacitance of 2332 F/g at 1 A/g with energy density of 81 Wh/kg. The enhanced performance was ascribed to the large surface area and the interconnectivity in the case of ultra-thin and flexible NMs. Increased ALD cycles led to stiffer NMs and decreased capacitance. Moreover, one series of two supercapacitors can light up one light-emitting diode with a working voltage of ~ 1.5 V, sufficiently describing its application values.
Project description:Understanding the spontaneous organization of atoms on well-defined surfaces promises to enable control over the shape and size of supported nanostructures. Atomic layer deposition (ALD) boasts atomic-scale control in the synthesis of thin films and nanoparticles. Yet, the possibility to control the shape of ALD-grown nanostructures remains mostly unexplored. Here, we report on the bottom-up formation of both linear and V-shaped anatase TiO2 nanorods (NRs) on graphene nanoplatelets during TiCl4/H2O ALD carried out at 300 °C. NRs as large as 200 nm form after only five ALD cycles, indicating that diffusional processes rather than layer-by-layer growth are behind the NR formation. In particular, high-resolution transmission electron microscopy reveals that the TiO2 NRs and graphene nanoplatelets are in rotational alignment as a result of lattice matching. Crucially, we also show that individual nanocrystals can undergo in-plane oriented attachment.
Project description:The redox properties of titania films grown by ALD on SBA-15, a silica-based mesoporous material, were characterized as a function of thickness (that is, the number of ALD cycles used). 29Si CP/MAS NMR helped to identify the nature of the surface species that form in the initial stages of deposition, and infrared absorption spectroscopy was used to follow the transition from silica to titania surfaces. The reducibility of the titania sites by CO and H2 was studied ex situ using EPR and in situ with ambient-pressure XPS. It was determined that the titania ALD films are amorphous and easier to reduce than crystalline titania and that the reduction is reversible. A transition in the nature of the surface was also observed, with unique mixed Si-O-Ti sites forming during the first few ALD cycles and a more typical titania surface progressively developing as the film grows in thickness.
Project description:In this work, TiN film deposited by plasma enhanced atomic layer deposition (PEALD) is adopted to modify the commercial anatase TiO2 powders. A series of analyses indicate that the surface modification of 20, 50 and 100 cycles of TiN by PEALD does not change the morphology, crystal size, lattice parameters, and surface area of TiO2 nano powders, but forms an ultrathin amorphous layer of nitrogen doped TiO2 (TiOxNy) on the powder surfaces. This ultrathin TiOxNy can facilitate the absorption of TiO2 in visible light spectrum. As a result, TiOxNy coated TiO2 powders exhibit excellent photocatalytic degradation towards methyl orange under the visible light with good photocatalytic stability compared to pristine TiO2 powders. TiOxNy (100 cycles PEALD TiN) coated TiO2 powders exhibit the excellent photocatalytic activity with the degradation efficiency of 96.5% in 2?hours, much higher than that of pristine TiO2 powder of only 4.4%. These results clearly demonstrate that only an ultrathin surface modification layer can dramatically improve the visible light photocatalytic activity of commercial TiO2 powders. Therefore, this surface modification using ALD is an extremely promising route to prepare visible light active photocatalysts.
Project description:In the present work, we report the use of TiO2 nanotube (NT) layers with a regular intertube spacing that are decorated by Pt nanoparticles through the atomic layer deposition (ALD) of Pt. These Pt-decorated spaced (SP) TiO2 NTs are subsequently explored for photocatalytic H2 evolution and are compared to classical close-packed (CP) TiO2 NTs that are also decorated with various amounts of Pt by using ALD. On both tube types, by varying the number of ALD cycles, Pt nanoparticles of different sizes and areal densities are formed, uniformly decorating the inner and outer walls from tube top to tube bottom. The photocatalytic activity for H2 evolution strongly depends on the size and density of Pt nanoparticles, driven by the number of ALD cycles. We show that, for SP NTs, a much higher photocatalytic performance can be achieved with significantly smaller Pt nanoparticles (i.e. for fewer ALD cycles) compared to CP NTs.
Project description:The use of trivalent erbium (Er3+), typically embedded as an atomic defect in the solid-state, has widespread adoption as a dopant in telecommunication devices and shows promise as a spin-based quantum memory for quantum communication. In particular, its natural telecom C-band optical transition and spin-photon interface make it an ideal candidate for integration into existing optical fiber networks without the need for quantum frequency conversion. However, successful scaling requires a host material with few intrinsic nuclear spins, compatibility with semiconductor foundry processes, and straightforward integration with silicon photonics. Here, we present Er-doped titanium dioxide (TiO2) thin film growth on silicon substrates using a foundry-scalable atomic layer deposition process with a wide range of doping controls over the Er concentration. Even though the as-grown films are amorphous after oxygen annealing, they exhibit relatively large crystalline grains, and the embedded Er ions exhibit the characteristic optical emission spectrum from anatase TiO2. Critically, this growth and annealing process maintains the low surface roughness required for nanophotonic integration. Finally, we interface Er ensembles with high quality factor Si nanophotonic cavities via evanescent coupling and demonstrate a large Purcell enhancement (≈300) of their optical lifetime. Our findings demonstrate a low-temperature, nondestructive, and substrate-independent process for integrating Er-doped materials with silicon photonics. At high doping densities this platform can enable integrated photonic components such as on-chip amplifiers and lasers, while dilute concentrations can realize single ion quantum memories.
Project description:Atomic-scale precision alignment is a bottleneck in the fabrication of next-generation nanoelectronics. In this study, a redox-coupled inherently selective atomic layer deposition (ALD) is introduced to tackle this challenge. The 'reduction-adsorption-oxidation' ALD cycles are designed by adding an in-situ reduction step, effectively inhibiting nucleation on copper. As a result, tantalum oxide exhibits selective deposition on various oxides, with no observable growth on Cu. Furthermore, the self-aligned TaOx is successfully deposited on Cu/SiO2 nanopatterns, avoiding excessive mushroom growth at the edges or the emergence of undesired nucleation defects within the Cu region. The film thickness on SiO2 exceeds 5 nm with a selectivity of 100%, marking it as one of the highest reported to date. This method offers a streamlined and highly precise self-aligned manufacturing technique, which is advantageous for the future downscaling of integrated circuits.