Author Correction: Microscale Schottky superlubric generator with high direct-current density and ultralong life.
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ABSTRACT:
SUBMITTER: Huang X
PROVIDER: S-EPMC8163821 | biostudies-literature |
REPOSITORIES: biostudies-literature
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Project description:Miniaturized or microscale generators that can effectively convert weak and random mechanical energy into electricity have significant potential to provide solutions for the power supply problem of distributed devices. However, owing to the common occurrence of friction and wear, all such generators developed so far have failed to simultaneously achieve sufficiently high current density and sufficiently long lifetime, which are crucial for real-world applications. To address this issue, we invent a microscale Schottky superlubric generator (S-SLG), such that the sliding contact between microsized graphite flakes and n-type silicon is in a structural superlubric state (an ultra-low friction and wearless state). The S-SLG not only generates high current (~210 Am-2) and power (~7 Wm-2) densities, but also achieves a long lifetime of at least 5,000 cycles, while maintaining stable high electrical current density (~119 Am-2). No current decay and wear are observed during the experiment, indicating that the actual persistence of the S-SLG is enduring or virtually unlimited. By excluding the mechanism of friction-induced excitation in the S-SLG, we further demonstrate an electronic drift process during relative sliding using a quasi-static semiconductor finite element simulation. Our work may guide and accelerate the future use of S-SLGs in real-world applications.
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Project description:With the fast development of the internet of things (IoTs), distributed sensors are frequently used and small and portable power sources are highly demanded. However, current portable power sources such as lithium batteries have low capacity and need to be replaced or recharged frequently. A portable power source which can continuously generate electrical power in situ will be an ideal solution. Herein, we demonstrate a wind driven semiconductor electricity generator based on a dynamic Schottky junction, which can output a continuous direct current with an average value of 4.4 mA (with a maximum value of 8.4 mA) over 740 seconds. Compared with a previous metal/semiconductor generator, the output current is one thousand times higher. Furthermore, this wind driven generator has been used as a turn counter, due to its stable output, and also to drive a graphene ultraviolet photodetector, which shows a responsivity of 35.8 A W-1 under 365 nm ultraviolet light. Our research provides a feasible method to achieve wind power generation and power supply for distributed sensors in the future.
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Project description:There is a rising prospective in harvesting energy from the environment, as in situ energy is required for the distributed sensors in the interconnected information society, among which the water flow energy is the most potential candidate as a clean and abundant mechanical source. However, for microscale and unordered movement of water, achieving a sustainable direct-current generating device with high output to drive the load element is still challenging, which requires for further exploration. Herein, we propose a dynamic PN water junction generator with moving water sandwiched between two semiconductors, which outputs a sustainable direct-current voltage of 0.3 V and a current of 0.64 μA. The mechanism can be attributed to the dynamic polarization process of water as moving dielectric medium in the dynamic PN water junction, under the Fermi level difference of two semiconductors. We further demonstrate an encapsulated portable power-generating device with simple structure and continuous direct-current voltage output of 0.11 V, which exhibits its promising potential application in the field of wearable devices and the IoTs.
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Project description:The overloaded energy cost has become the main concern of the now fast developing society, which make novel energy devices with high power density of critical importance to the sustainable development of human society. Herein, a dynamic Schottky diode based generator with ultrahigh power density of 1262.0 W m-2 for sliding Fe tip on rough p-type silicon is reported. Intriguingly, the increased surface states after rough treatment lead to an extremely enhanced current density up to 2.7 × 105 A m-2, as the charged surface states can effectively accelerate the carriers through large atomic electric field, while the reflecting directions are regulated by the built-in electric field of the Schottky barrier. This research provides an open avenue for utilizing the surface states in semiconductors in a subversive way, which can co-utilize the atomic electric field and built-in electric field to harvest energy from the mechanical movements, especially for achieving an ultrahigh current density power source.
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Project description:In the original version of this Article the dataset identifier in the Data Availability statement was incorrect. The correct dataset identifier is PXD009500. This has been corrected in the HTML and PDF versions of this Article.
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Project description:Wear-free sliding between two contacted solid surfaces is the ultimate goal in the effort to extend the lifetime of mechanical devices, especially when it comes to inventing new types of micro-electromechanical systems where wear is often a major obstacle. Here we report experimental observations of wear-free sliding for a micrometer-sized graphite flake on a diamond-like-carbon (DLC) surface under ambient conditions with speeds up to 2.5 m/s, and over a distance of 100 km. The coefficient of friction (COF) between the microscale graphite flake, a van der Waals (vdW) layered material and DLC, a non-vdW-layered material, is measured to be of the order of [Formula: see text], which belongs to the superlubric regime. Such ultra-low COFs are also demonstrated for a microscale graphite flake sliding on six other kinds of non-vdW-layered materials with sub-nanometer roughness. With a synergistic analysis approach, we reveal the underlying mechanism to be the combination of interfacial vdW interaction, atomic-smooth interfaces and the low normal stiffness of the graphite flake. These features guarantee a persistent full contact of the interface with weak interaction, which contributes to the ultra-low COFs. Together with the extremely high in-plane strength of graphene, wear-free sliding is achieved. Our results broaden the scope of superlubricity and promote its wider application in the future.
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Project description:The current-carrying friction characteristics are crucial for the performance of a sliding electrical contact, which plays critical roles in numerous electrical machines and devices. However, these characteristics are influenced by multiple factors such as material surface quality, chemical reactions, and atmospheric environment, leading to a challenge for researchers to comprehensively consider these impacts. Structural superlubricity (SSL), a state of nearly zero friction and no wear between contact solid surfaces, provides an ideal experimental system for these studies. Here, with microscale graphite flakes on atomic-flattened Au surface under applied voltages, we observed two opposite friction phenomena, depending only on whether the edge of graphite flake was in contact with the Au substrate. When in contact the friction force would increase with an increasing voltage, otherwise, the friction force would decrease. Notably, when the voltage was turned off, the friction force quickly recovered to its original level, indicating the absence of wear. Through atmosphere control and molecular dynamics simulations, we revealed the mechanism to be the different roles played by the water molecules confined at the interface or adsorbed near the edges. Our experimental results demonstrate the remarkable tunable and robust frictional properties of SSL under an electrical field, providing an ideal system for the fundamental research of not only sliding electrical contacts, but also novel devices which demand tunable frictions.
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Project description:The static PN junction is the foundation of integrated circuits. Herein, we pioneer a high current density generation by mechanically moving N-type semiconductor over P-type semiconductor, named as the dynamic PN junction. The establishment and destruction of the depletion layer causes the redistribution and rebounding of diffusing carriers by the built-in field, similar to a capacitive charge/discharge process of PN junction capacitance during the movement. Through inserting dielectric layer at the interface of the dynamic PN junction, output voltage can be improved and designed numerically according to the energy level difference between the valence band of semiconductor and conduction band of dielectric layer. Especially, the dynamic MoS2/AlN/Si generator with open-circuit voltage of 5.1 V, short-circuit current density of 112.0 A/m2, power density of 130.0 W/m2, and power-conversion efficiency of 32.5% has been achieved, which can light up light-emitting diode timely and directly. This generator can continuously work for 1 h, demonstrating its great potential applications.
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Project description:Searching for light and miniaturized functional device structures for sustainable energy gathering from the environment is the focus of energy society with the development of the internet of things. The proposal of a dynamic heterojunction-based direct current generator builds up new platforms for developing in situ energy. However, the requirement of different semiconductors in dynamic heterojunction is too complex to wide applications, generating energy loss for crystal structure mismatch. Herein, dynamic homojunction generators are explored, with the same semiconductor and majority carrier type. Systematic experiments reveal that the majority of carrier directional separation originates from the breaking symmetry between carrier distribution, leading to the rebounding effect of carriers by the interfacial electric field. Strikingly, NN Si homojunction with different Fermi levels can also output the electricity with higher current density than PP/PN homojunction, attributing to higher carrier mobility. The current density is as high as 214.0 A/m2, and internal impedance is as low as 3.6 kΩ, matching well with the impedance of electron components. Furthermore, the N-i-N structure is explored, whose output voltage can be further improved to 1.3 V in the case of the N-Si/Al2O3/N-Si structure, attributing to the enhanced interfacial barrier. This approach provides a simple and feasible way of converting low-frequency disordered mechanical motion into electricity.
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