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Direct observation of trap-assisted recombination in organic photovoltaic devices.

ABSTRACT: Trap-assisted recombination caused by localised sub-gap states is one of the most important first-order loss mechanism limiting the power-conversion efficiency of all solar cells. The presence and relevance of trap-assisted recombination in organic photovoltaic devices is still a matter of some considerable ambiguity and debate, hindering the field as it seeks to deliver ever higher efficiencies and ultimately a viable new solar photovoltaic technology. In this work, we show that trap-assisted recombination loss of photocurrent is universally present under operational conditions in a wide variety of organic solar cell materials including the new non-fullerene electron acceptor systems currently breaking all efficiency records. The trap-assisted recombination is found to be induced by states lying 0.35-0.6 eV below the transport edge, acting as deep trap states at light intensities equivalent to 1 sun. Apart from limiting the photocurrent, we show that the associated trap-assisted recombination via these comparatively deep traps is also responsible for ideality factors between 1 and 2, shedding further light on another open and important question as to the fundamental working principles of organic solar cells. Our results also provide insights for avoiding trap-induced losses in related indoor photovoltaic and photodetector applications.

SUBMITTER: Zeiske S

PROVIDER: S-EPMC8203604 | biostudies-literature |

REPOSITORIES: biostudies-literature

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Charge-generating mid-gap trap states define the thermodynamic limit of organic photovoltaic devices.

Project description:Detailed balance is a cornerstone of our understanding of artificial light-harvesting systems. For next generation organic solar cells, this involves intermolecular charge-transfer (CT) states whose energies set the maximum open circuit voltage VOC. We have directly observed sub-gap states significantly lower in energy than the CT states in the external quantum efficiency spectra of a significant number of organic semiconductor blends. Taking these states into account and using the principle of reciprocity between emission and absorption results in non-physical radiative limits for the VOC. We propose and provide compelling evidence for these states being non-equilibrium mid-gap traps which contribute to photocurrent by a non-linear process of optical release, upconverting them to the CT state. This motivates the implementation of a two-diode model which is often used in emissive inorganic semiconductors. The model accurately describes the dark current, VOC and the long-debated ideality factor in organic solar cells. Additionally, the charge-generating mid-gap traps have important consequences for our current understanding of both solar cells and photodiodes - in the latter case defining a detectivity limit several orders of magnitude lower than previously thought.

| S-EPMC7642445 | biostudies-literature

Author Correction: Charge-generating mid-gap trap states define the thermodynamic limit of organic photovoltaic devices.

Project description: Not available

| S-EPMC7782746 | biostudies-literature

Direct observation of shift and ballistic photovoltaic currents.

Project description:The quantum phenomenon of shift photovoltaic current was predicted decades ago, but this effect was never observed directly because shift and ballistic currents coexist. The atomic-scale relaxation time of shift, along with the absence of a photo-Hall behavior, has made decisive measurement of shift elusive. Here, we report a facile, direct-current, steady-state method for unambiguous determination of shift by means of the simultaneous measurements of linear and circular bulk photovoltaic currents under magnetic field, in a sillenite piezoelectric crystal. Comparison with theoretical predictions permits estimation of the signature length scale for shift. Remarkably, shift and ballistic photovoltaic currents under monochromatic illumination simultaneously flow in opposite directions. Disentangling the shift and ballistic contributions opens the way for quantitative, fundamental insight into and practical understanding of these radically different photovoltaic current mechanisms and their relationship.

| S-EPMC6357740 | biostudies-literature

Effect of Ultraviolet Radiation on Organic Photovoltaic Materials and Devices.

Project description:Organic photovoltaics are a sustainable and cost-effective power-generation technology that may aid the move to zero-emission buildings, carbon neutral cities, and electric vehicles. While state-of-the-art organic photovoltaic devices can be encapsulated to withstand air and moisture, they are currently still susceptible to light-induced degradation, leading to a decline in the long-term efficiency of the devices. In this study, the role of ultraviolet (UV) radiation on a multilayer organic photovoltaic device is systematically uncovered using spectral filtering. By applying long-pass filters to remove different parts of the UV portion of the AM1.5G spectrum, two main photodegradation processes are shown to occur in the organic photovoltaic devices. A UV-activated process is found to cause a significant decrease in the photocurrent across the whole spectrum and is most likely linked to the deterioration of the charge extraction layers. In addition, a photodegradation process caused by UV-filtered sunlight is found to change the micromorphology of the bulk heterojunction material, leading to a reduction in photocurrent at high photon energies. These findings strongly suggest that the fabrication of inherently photostable organic photovoltaic devices will require the replacement of fullerene-based electron transporter materials with alternative organic semiconductors.

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Carbon nanoonion-ferrocene conjugates as acceptors in organic photovoltaic devices.

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| S-EPMC5613227 | biostudies-literature

Direct observation of Anderson localization in plasmonic terahertz devices.

Project description:We present the first experimental observation of Anderson localization in the terahertz frequency range using plasmonic structures. To accomplish this goal, we designed THz waveguides consisting of a one-dimensional array of rectangular apertures that were fabricated in a freestanding metal foil. Disorder is introduced into the waveguide by offsetting the position of each aperture by a random distance within a prescribed range. For example, for a waveguide with apertures spaced by 250??m in a periodic waveguide, 10% disorder would correspond to the apertures being shifted by a random value between ±25??m along the waveguide axis. We find that for disorder levels below 25%, there is only an increase in the propagation loss along the device. However, for two specific waveguides with 25% disorder, we observe a spatially localized mode that lies just within the stop band of the device and exhibits a double-sided exponential spatial decay away from the maximum.

| S-EPMC6062171 | biostudies-literature

11% Organic Photovoltaic Devices Based on PTB7-Th: PC<sub>71</sub>BM Photoactive Layers and Irradiation-Assisted ZnO Electron Transport Layers.

Project description:The enhancement of interfacial charge collection efficiency using buffer layers is a cost-effective way to improve the performance of organic photovoltaic devices (OPVs) because they are often universally applicable regardless of the active materials. However, the availability of high-performance buffer materials, which are solution-processable at low temperature, are limited and they often require burdensome additional surface modifications. Herein, high-performance ZnO based electron transporting layers (ETLs) for OPVs are developed with a novel g-ray-assisted solution process. Through careful formulation of the ZnO precursor and g-ray irradiation, the pre-formation of ZnO nanoparticles occurs in the precursor solutions, which enables the preparation of high quality ZnO films. The g-ray assisted ZnO (ZnO-G) films possess a remarkably low defect density compared to the conventionally prepared ZnO films. The low-defect ZnO-G films can improve charge extraction efficiency of ETL without any additional treatment. The power conversion efficiency (PCE) of the device using the ZnO-G ETLs is 11.09% with an open-circuit voltage (VOC), short-circuit current density ( JSC), and fill factor (FF) of 0.80 V, 19.54 mA cm-2, and 0.71, respectively, which is one of the best values among widely studied poly[4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b;4,5-b']dithiophene-2,6-diyl-alt-(4-(2-ethylhexyl)-3-fluorothieno[3,4-b]thiophene-)-2-carboxylate-2-6-diyl)]: [6,6]-phenyl-C71-butyric acid methyl ester (PTB7-Th:PC71BM)-based devices.

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