Browse
Submit Data
Databases
API
Help

Dataset Information

31 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Parallel Potentiometric and Capacitive Response in a Water-Gate Thin Film Transistor Biosensor at High Ionic Strength.

ABSTRACT: We show that an SnO₂-based water-gate thin film transistor (WGTFT) biosensor responds to a waterborne analyte, the spike protein of the SARS-CoV-2 virus, by a parallel potentiometric and capacitive mechanism. We draw our conclusion from an analysis of transistor output characteristics, which avoids the known ambiguities of the common analysis based on transfer characteristics. Our findings contrast with reports on organic WGTFT biosensors claiming a purely capacitive response due to screening effects in high ionic strength electrolytes, but are consistent with prior work that clearly shows a potentiometric response even in strong electrolytes. We provide a detailed critique of prior WGTFT analysis and screening reasoning. Empirically, both potentiometric and capacitive responses can be modelled quantitatively by a Langmuir‒Freundlich (LF) law, which is mathematically equivalent to the Hill equation that is frequently used for biosensor response characteristics. However, potentiometric and capacitive model parameters disagree. Instead, the potentiometric response follows the Nikolsky-Eisenman law, treating the analyte 'RBD spike protein' as an ion carrying two elementary charges. These insights are uniquely possible thanks to the parallel presence of two response mechanisms, as well as their reliable delineation, as presented here.

SUBMITTER: AlQahtani H

PROVIDER: S-EPMC8402598 | biostudies-literature |

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Similar Datasets

Modulating Thin Film Transistor Characteristics by Texturing the Gate Metal.

Project description:The development of reliable, high performance integrated circuits based on thin film transistors (TFTs) is of interest for the development of flexible electronic circuits. In this work we illustrate the modulation of TFT transconductance via the texturing of the gate metal created by the addition of a conductive pattern on top of a planar gate. Texturing results in the semiconductor-insulator interface acquiring a non-planar geometry with local variations in the radius of curvature. This influences various TFT parameters such as the subthreshold slope, gate voltage at the onset of conduction, contact resistance and gate capacitance. Specific studies are performed on textures based on periodic striations oriented along different directions. Textured TFTs showed upto ±40% variation in transconductance depending on the texture orientation as compared to conventional planar gate TFTs. Analytical models are developed and compared with experiments. Gain boosting in common source amplifiers based on textured TFTs as compared to conventional TFTs is demonstrated.

| S-EPMC5738405 | biostudies-literature

Glucose Sensing Using Capacitive Biosensor Based on Polyvinylidene Fluoride Thin Film.

Project description:A polyvinylidene fluoride (PVDF) film-based capacitive biosensor was developed for glucose sensing. This device consists of a PVDF film sandwiched between two electrodes. A capacitive biosensor measures the dielectric properties of the dielectric layers at the interface between the electrolyte and the electrode. A glucose oxidase (GOx) enzyme was immobilized onto the electrode to oxidize glucose. In practice, the biochemical reaction of glucose with the GOx enzyme generates free electron carriers. Consequently, the potential difference between the electrodes is increased, resulting in a measurable voltage output of the biosensor. The device was tested for various glucose concentrations in the range of 0.013 to 5.85 M, and various GOx enzyme concentrations between 4882.8 and 2.5 million units/L. We found that the sensor output increased with increasing glucose concentration up to 5.85 M. These results indicate that the PVDF film-based capacitive biosensors can be properly applied to glucose sensing and provide opportunities for the low-cost fabrication of glucose-based biosensors based on PVDF materials.

| S-EPMC5872060 | biostudies-literature

Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric.

Project description:Printing electronics has become increasingly prominent in the field of electronic engineering because this method is highly efficient at producing flexible, low-cost and large-scale thin-film transistors. However, TFTs are typically constructed with rigid insulating layers consisting of oxides and nitrides that are brittle and require high processing temperatures, which can cause a number of problems when used in printed flexible TFTs. In this study, we address these issues and demonstrate a method of producing inkjet-printed TFTs that include an ultra-thin polymeric dielectric layer produced by initiated chemical vapor deposition (iCVD) at room temperature and highly purified 99.9% semiconducting carbon nanotubes. Our integrated approach enables the production of flexible logic circuits consisting of CNT-TFTs on a polyethersulfone (PES) substrate that have a high mobility (up to 9.76?cm(2) V(-1) sec(-)1), a low operating voltage (less than 4?V), a high current on/off ratio (3?×?10(4)), and a total device yield of 90%. Thus, it should be emphasized that this study delineates a guideline for the feasibility of producing flexible CNT-TFT logic circuits with high performance based on a low-cost and simple fabrication process.

| S-EPMC4869014 | biostudies-literature

Highly Sensitive Active-Matrix Driven Self-Capacitive Fingerprint Sensor based on Oxide Thin Film Transistor.

Project description:The fingerprint recognition has been widely used for biometrics in mobile devices. Existing fingerprint sensors have already been commercialized in the field of mobile devices using primarily Si-based technologies. Recently, mutual-capacitive fingerprint sensors have been developed to lower production costs and expand the range of application using thin-film technologies. However, since the mutual-capacitive method detects the change of mutual capacitance, it has high ratio of parasitic capacitance to ridge-to-valley capacitance, resulting in low sensitivity, compared to the self-capacitive method. In order to demonstrate the self-capacitive fingerprint sensor, a switching device such as a transistor should be integrated in each pixel, which reduces a complexity of electrode configuration and sensing circuits. The oxide thin-film transistor (TFT) can be a good candidate as a switching device for the self-capacitive fingerprint sensor. In this work, we report a systematic approach for self-capacitive fingerprint sensor integrating Al-InSnZnO TFTs with field-effect mobility higher than 30?cm2/Vs, which enable isolation between pixels, by employing industry-friendly process methods. The fingerprint sensors are designed to reduce parasitic resistance and capacitance in terms of the entire system. The excellent uniformity and low leakage current (<10-12) of the oxide TFTs allow successful capture of a fingerprint image.

| S-EPMC6397235 | biostudies-literature

Performance enhancement of capacitive-coupling dual-gate ion-sensitive field-effect transistor in ultra-thin-body.

Project description:Recently, thin-film transistor based-ISFETs with the dual-gate (DG) structures have been proposed, in order to beat the Nernst response of the standard ISFET, utilizing diverse organic or inorganic materials. The immutable Nernst response can be dramatically transformed to an ultra-sensing margin, with the capacitive-coupling arisen from the DG structure. In order to advance this platform, we here embedded the ultra-thin body (UTB) into the DG ISFET. The UTB of 4.3 nm serves to not only increase its sensitivity, but also to strongly suppress the leakage components, leading to a better stability of the DG ISFET. In addition, we first provide a comprehensive analysis of the body thickness effects especially how the thick body can render the degradation in the device performance, such as sensitivity and stability. The UTB DG ISFET will allow the ISFET-based biosensor platform to continue enhancement into the next decade.

| S-EPMC4055887 | biostudies-other

A mixed solution-processed gate dielectric for zinc-tin oxide thin-film transistor and its MIS capacitance.

Project description:Solution-processed gate dielectrics were fabricated with the combined ZrO2 and Al2O3 (ZAO) in the form of mixed and stacked types for oxide thin film transistors (TFTs). ZAO thin films prepared with double coatings for solid gate dielectrics were characterized by analytical tools. For the first time, the capacitance of the oxide semiconductor was extracted from the capacitance-voltage properties of the zinc-tin oxide (ZTO) TFTs with the combined ZAO dielectrics by using the proposed metal-insulator-semiconductor (MIS) structure model. The capacitance evolution of the semiconductor from the TFT model structure described well the threshold voltage shift observed in the ZTO TFT with the ZAO (1:2) gate dielectric. The electrical properties of the ZTO TFT with a ZAO (1:2) gate dielectric showed low voltage driving with a field effect mobility of 37.01?cm(2)/Vs, a threshold voltage of 2.00?V, an on-to-off current ratio of 1.46?×?10(5), and a subthreshold slope of 0.10?V/dec.

| S-EPMC5027534 | biostudies-literature

Exceedingly High Performance Top-Gate P-Type SnO Thin Film Transistor with a Nanometer Scale Channel Layer.

Project description:Implementing high-performance n- and p-type thin-film transistors (TFTs) for monolithic three-dimensional (3D) integrated circuit (IC) and low-DC-power display is crucial. To achieve these goals, a top-gate transistor is preferred to a conventional bottom-gate structure. However, achieving high-performance top-gate p-TFT with good hole field-effect mobility (μFE) and large on-current/off-current (ION/IOFF) is challenging. In this report, coplanar top-gate nanosheet SnO p-TFT with high μFE of 4.4 cm2/Vs, large ION/IOFF of 1.2 × 105, and sharp transistor's turn-on subthreshold slopes (SS) of 526 mV/decade were achieved simultaneously. Secondary ion mass spectrometry analysis revealed that the excellent device integrity was strongly related to process temperature, because the HfO2/SnO interface and related μFE were degraded by Sn and Hf inter-diffusion at an elevated temperature due to weak Sn-O bond enthalpy. Oxygen content during process is also crucial because the hole-conductive p-type SnO channel is oxidized into oxygen-rich n-type SnO2 to demote the device performance. The hole μFE, ION/IOFF, and SS values obtained in this study are the best-reported data to date for top-gate p-TFT device, thus facilitating the development of monolithic 3D ICs on the backend dielectric of IC chips.

| S-EPMC7823917 | biostudies-literature

Remarkably High-Performance Nanosheet GeSn Thin-Film Transistor.

Project description:High-performance p-type thin-film transistors (pTFTs) are crucial for realizing low-power display-on-panel and monolithic three-dimensional integrated circuits. Unfortunately, it is difficult to achieve a high hole mobility of greater than 10 cm2/V·s, even for SnO TFTs with a unique single-hole band and a small hole effective mass. In this paper, we demonstrate a high-performance GeSn pTFT with a high field-effect hole mobility (μFE), of 41.8 cm2/V·s; a sharp turn-on subthreshold slope (SS), of 311 mV/dec, for low-voltage operation; and a large on-current/off-current (ION/IOFF) value, of 8.9 × 106. This remarkably high ION/IOFF is achieved using an ultra-thin nanosheet GeSn, with a thickness of only 7 nm. Although an even higher hole mobility (103.8 cm2/V·s) was obtained with a thicker GeSn channel, the IOFF increased rapidly and the poor ION/IOFF (75) was unsuitable for transistor applications. The high mobility is due to the small hole effective mass of GeSn, which is supported by first-principles electronic structure calculations.

| S-EPMC8777649 | biostudies-literature

Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors.

Project description:In this paper, we demonstrate high mobility solution-processed metal-oxide thin-film transistors (TFTs) by using a high-frequency-stable ionic-type hybrid gate dielectric (HGD). The HGD gate dielectric, a blend of sol-gel aluminum oxide (AlOx) and poly(4-vinylphenol) (PVP), exhibited high dielectric constant (ε~8.15) and high-frequency-stable characteristics (1 MHz). Using the ionic-type HGD as a gate dielectric layer, an minimal electron-double-layer (EDL) can be formed at the gate dielectric/InOx interface, enhancing the field-effect mobility of the TFTs. Particularly, using the ionic-type HGD gate dielectrics annealed at 350 °C, InOx TFTs having an average field-effect mobility of 16.1 cm²/Vs were achieved (maximum mobility of 24 cm²/Vs). Furthermore, the ionic-type HGD gate dielectrics can be processed at a low temperature of 150 °C, which may enable their applications in low-thermal-budget plastic and elastomeric substrates. In addition, we systematically studied the operational stability of the InOx TFTs using the HGD gate dielectric, and it was observed that the HGD gate dielectric effectively suppressed the negative threshold voltage shift during the negative-illumination-bias stress possibly owing to the recombination of hole carriers injected in the gate dielectric with the negatively charged ionic species in the HGD gate dielectric.

| S-EPMC5553520 | biostudies-other

Single-nucleotide polymorphism genotyping on optical thin-film biosensor chips.

Project description:Single-nucleotide polymorphisms (SNPs) constitute the bulk of human genetic variation and provide excellent markers to identify genetic factors contributing to complex disease susceptibility. A rapid, sensitive, and inexpensive assay is important for large-scale SNP scoring. Here we report the development of a multiplex SNP detection system using silicon chips coated to create a thin-film optical biosensor. Allele-discriminating, aldehyde-labeled oligonucleotides are arrayed and covalently attached to a hydrazinederivatized chip surface. Target sequences (e.g., PCR amplicons) then are hybridized in the presence of a mixture of biotinylated detector probes, one for each SNP, and a thermostable DNA ligase. After a stringent wash (0.01 M NaOH), ligation of biotinylated detector probes to perfectly matched capture oligomers is visualized as a color change on the chip surface (gold to blue/purple) after brief incubations with an anti-biotin IgG-horseradish peroxidase conjugate and a precipitable horseradish peroxidase substrate. Testing of PCR fragments is completed in 30-40 min. Up to several hundred SNPs can be assayed on a 36-mm2 chip, and SNP scoring can be done by eye or with a simple digital-camera system. This assay is extremely robust, exhibits high sensitivity and specificity, and is format-flexible and economical. In studies of mutations associated with risk for venous thrombosis and genotyping/haplotyping of African-American samples, we document high-fidelity analysis with 0 misassignments in 500 assays performed in duplicate.

| S-EPMC208797 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data