Project description:III/V semiconductor nanostructures have significant potential in device applications, but effective surface passivation is critical due to their large surface-to-volume ratio. For InP such passivation has proven particularly difficult, with substantial depassivation generally observed following dielectric deposition on InP surfaces. We present a novel approach based on passivation with a phosphorus-rich interfacial oxide deposited using a low-temperature process, which is critical to avoid P-desorption. For this purpose we have chosen a POx layer deposited in a plasma-assisted atomic layer deposition (ALD) system at room temperature. Since POx is known to be hygroscopic and therefore unstable in atmosphere, we encapsulate this layer with a thin ALD Al2O3 capping layer to form a POx/Al2O3 stack. This passivation scheme is capable of improving the photoluminescence (PL) efficiency of our state-of-the-art wurtzite (WZ) InP nanowires by a factor of ∼20 at low excitation. If we apply the rate equation analysis advocated by some authors, we derive a PL internal quantum efficiency (IQE) of 75% for our passivated wires at high excitation. Our results indicate that it is more reliable to calculate the IQE as the ratio of the integrated PL intensity at room temperature to that at 10 K. By this means we derive an IQE of 27% for the passivated wires at high excitation (>10 kW cm-2), which constitutes an unprecedented level of performance for undoped InP nanowires. This conclusion is supported by time-resolved PL decay lifetimes, which are also shown to be significantly higher than previously reported for similar wires. The passivation scheme displays excellent long-term stability (>7 months) and is additionally shown to substantially improve the thermal stability of InP surfaces (>300 °C), significantly expanding the temperature window for device processing. Such effective surface passivation is a key enabling technology for InP nanowire devices such as nanolasers and solar cells.
Project description:This data article is related to the recently published article '20.8% industrial PERC solar cell: ALD Al2O3 rear surface passivation, efficiency loss mechanisms analysis and roadmap to 24%' (Huang et al., 2017) [1]. This paper is about passivated emitter and rear cell (PERC) structures and it describes the quality of the Al2O3 rear-surface passivation layer deposited by atomic layer deposition (ALD), in relation to the processing parameters (e.g. pre-clean treatment, deposition temperature, growth per cycle, and film thickness) and to the cell efficiency loss mechanisms. This dataset is made public in order to contribute to the limited available public data on industrial PERC cells, to be used by other researchers.
Project description:The photovoltaic effect in the anodic formation of silicon dioxide (SiO2) on porous silicon (PS) surfaces was investigated toward developing a potential passivation technique to achieve high efficiency nanostructured Si solar cells. The PS layers were prepared by electrochemical anodization in hydrofluoric acid (HF) containing electrolyte. An anodic SiO2 layer was formed on the PS surface via a bottom-up anodization mechanism in HCl/H2O solution at room temperature. The thickness of the oxide layer for surface passivation was precisely controlled by adjusting the anodizing current density and the passivation time, for optimal oxidation on the PS layer while maintaining its original nanostructure. HRTEM characterization of the microstructure of the PS layer confirms an atomic lattice matching at the PS/Si interface. The dependence of photovoltaic performance, series resistance, and shunt resistance on passivation time was examined. Due to sufficient passivation on the PS surface, a sample with anodization duration of 30 s achieved the best conversion efficiency of 10.7%. The external quantum efficiency (EQE) and internal quantum efficiency (IQE) indicate a significant decrease in reflectivity due to the PS anti-reflection property and indicate superior performance due to SiO2 surface passivation. In conclusion, the surface of PS solar cells could be successfully passivated by electrochemical anodization.
Project description:In this study, we investigate the impact of two-dimensional MoS2 coating on the optical properties of surface GaN/AlGaN quantum wells (QWs). A strong enhancement in GaN QW light emission is observed with monolayer-MoS2 coating, yielding luminescence intensity comparable to that from a QW capped by an AlGaN barrier. Our results demonstrate that MoS2, despite its quite different nature from III-nitride semiconductors, acts as an effective barrier for surface GaN QWs and suppresses spatially localized intrinsic surface states. This finding provides novel pathways for efficient III-nitride surface passivation.
Project description:High interfacial resistance of an electrode/electrolyte interface is the most challenging barrier for the expanding application of all-solid-state lithium batteries (ASSLBs). To address this challenge, poly(propylene carbonate)-based solid polymer electrolytes (PPC-SPEs) were introduced as interlayers combined with a Li1.5Al0.5Ge1.5(PO4)3 (LAGP) solid state electrolyte (SSE), which successfully decreased the interfacial resistance of the SSE/electrolyte interface by suppressing the reduction reaction of Ge4+ against the Li metal, as well as producing intimate contact between the cathode and electrolyte. This work provides a systematic analysis of the interfacial resistance of the cathode/SSE, Li/SSE and the polymer/LAGP interfaces. As a consequence, the interfacial resistance of the Li/SSE interface decreased about 35%, and the interfacial resistance of the cathode/SSE interface decreased from 3.2 × 104 to 543 Ω cm2. With a PPC-LAGP-PPC sandwich structure composite electrolyte (PLSSCE), the all-solid-state LiFePO4/Li cell showed a high capacity of 148.1 mA h g-1 at 0.1C and a great cycle performance over 90 cycles.
Project description:In this paper, the effect of atomic layer deposition (ALD)-derived Al2O3 passivation layers and annealing temperatures on the interfacial chemistry and transport properties of sputtering-deposited Er2O3 high-k gate dielectrics on Si substrate has been investigated. X-ray photoelectron spectroscopy (XPS) analyses have showed that the ALD-derived Al2O3 passivation layer remarkably prevents the formation of the low-k hydroxides generated by moisture absorption of the gate oxide and greatly optimizes the gate dielectric properties. Electrical performance measurements of metal oxide semiconductor (MOS) capacitors with different gate stack order have revealed that the lowest leakage current density of 4.57 × 10-9 A/cm2 and the smallest interfacial density of states (Dit) of 2.38 × 1012 cm-2 eV-1 have been achieved in the Al2O3/Er2O3/Si MOS capacitor, which can be attributed to the optimized interface chemistry. Further electrical measurements of annealed Al2O3/Er2O3/Si gate stacks at 450 °C have demonstrated superior dielectric properties with a leakage current density of 1.38 × 10-9 A/cm2. At the same, the leakage current conduction mechanism of MOS devices under various stack structures is systematically investigated.
Project description:RationaleA silver phosphate reference material (Ag3 PO4 ) for the measurement of stable oxygen isotope compositions is much needed; however, it is not available from the authorities distributing reference materials. This study aims to fill this gap by calibrating a new Ag3 PO4 stable isotope comparison material produced by the University of Natural Resources and Life Sciences (BOKU).MethodsAliquots of Ag3 PO4 were distributed to four laboratories who frequently measure the δ18 O value in Ag3 PO4 ; the University of Natural Resources and Life Sciences (BOKU), the University of Western Australia (UWA), the University of Helsinki (UH), and the Helmholtz Centre for Environmental Research (UFZ). The instruments used to perform the measurements were high-temperature conversion elemental analysers coupled with continuous flow isotope ratio mass spectrometers. The working gas δ18 O value was set to 0‰ and the normalization was done by a three-point linear regression using the reference materials IAEA-601, IAEA-602, and NBS127.ResultsThe mean δ18 O value of the new BOKU Ag3 PO4 comparison material on the VSMOW-SLAP scale is 13.71‰ and the combined uncertainty is estimated as ±0.34‰. This estimated uncertainty is within the range typical for comparison materials of phosphates and sulphates. Consistent results from the different laboratories probably derived from similar instrumentation, and use of the same reference materials and normalization procedure. The matrix effect of the different reference materials used in this study was deemed negligible.ConclusionsThe BOKU Ag3 PO4 can be used as an alternative comparison material for stable oxygen isotope analysis and is available for stable isotope research laboratories to facilitate calibration.
Project description:In this study, a facile passivation for methylammonium lead bromide (MAPbBr3) single crystals is reported. Stability against moisture and light remains the most critical demerit of perovskite materials, which is improved by depositing a 40 Å thick hydrophobic copper phthalocyanine (CuPc) layer on top of the cleaved perovskite surface. The water and light exposure processes were monitored with X-ray photoelectron spectroscopy with precise control of the exposure time and pressure. It is found that the CuPc top layer could protect the sample from moisture infiltration at a water exposure of 1013 L, while the nonpassivated sample started to degrade at 108 L. During the light exposure, CuPc also slowed down the light-induced degradation, which is supported by the elemental ratio change of metallic lead and bromine. These results are further confirmed by the morphological comparison via scanning electron microscopy and focused ion beam.
Project description:The family of III-Nitride semiconductors has been under intensive research for almost 30 years and has revolutionized lighting applications at the dawn of the 21st century. However, besides the developments and applications achieved, nitride alloys continue to fuel the quest for novel materials and applications. We report on the synthesis of a new nitride-based compound by using annealing of AlN heteroepitaxial layers under a Si-atmosphere at temperatures between 1350?°C and 1550?°C. The structure and stoichiometry of this compound are investigated by high resolution transmission electron microscopy (TEM) techniques and energy dispersive X-Ray (EDX) spectroscopy. Results are supported by density functional theory (DFT) calculations. The identified structure is a derivative of the parent wurtzite AlN crystal where the anion sublattice is fully occupied by N atoms and the cation sublattice is the stacking of 2 different planes along <0001>: The first one exhibits a ×3 periodicity along <11-20> with 1/3 of the sites being vacant. The rest of the sites in the cation sublattice are occupied by an equal number of Si and Al atoms. Assuming a semiconducting alloy, a range of stoichiometries is proposed, Al5+?Si5+?N12 with ? being between -2/3 and 1/4 and ? between 0 and 3/4.
Project description:Sputtered NiO x (sp-NiO x ) is a preferred hole transporting material for perovskite solar cells because of its hole mobility, ease of manufacturability, good stability, and suitable Fermi level for hole extraction. However, uncontrolled defects in sp-NiO x can limit the efficiency of solar cells fabricated with this hole transporting layer. An interfacial layer has been proposed to modify the sp-NiO x /perovskite interface, which can contribute to improving the crystallinity of the perovskite film. Herein, a 2-(3,6-dimethoxy-9H-carbazol-9-yl)ethyl]phosphonic acid (MeO-2PACz) self-assembled monolayer was used to modify an sp-NiO x surface. We found that the MeO-2PACz interlayer improves the quality of the perovskite film due to an enlarged domain size, reduced charge recombination at the sp-NiO x /perovskite interface, and passivation of the defects in sp-NiO x surfaces. In addition, the band tail states are also reduced, as indicated by photothermal deflection spectroscopy, which thus indicates a reduction in defect levels. The overall outcome is an improvement in the device efficiency from 11.9% to 17.2% due to the modified sp-NiO x /perovskite interface, with an active area of 1 cm2 (certified efficiency of 16.25%). On the basis of these results, the interfacial engineering of the electronic properties of sp-NiO x /MeO-2PACz/perovskite is discussed in relation to the improved device performance.