Dataset Information

Data of ALD Al₂O₃ rear surface passivation, Al₂O₃ PERC cell performance, and cell efficiency loss mechanisms of Al₂O₃ PERC cell.

ABSTRACT: This data article is related to the recently published article '20.8% industrial PERC solar cell: ALD Al₂O₃ rear surface passivation, efficiency loss mechanisms analysis and roadmap to 24%' (Huang et al., 2017) [1]. This paper is about passivated emitter and rear cell (PERC) structures and it describes the quality of the Al₂O₃ rear-surface passivation layer deposited by atomic layer deposition (ALD), in relation to the processing parameters (e.g. pre-clean treatment, deposition temperature, growth per cycle, and film thickness) and to the cell efficiency loss mechanisms. This dataset is made public in order to contribute to the limited available public data on industrial PERC cells, to be used by other researchers.

SUBMITTER: Huang H

PROVIDER: S-EPMC5241579 | biostudies-literature | 2017 Apr

REPOSITORIES: biostudies-literature

ACCESS DATA

Publications

Data of ALD Al2O3 rear surface passivation, Al2O3 PERC cell performance, and cell efficiency loss mechanisms of Al2O3 PERC cell.

Huang Haibing H Lv Jun J Bao Yameng Y Xuan Rongwei R Sun Shenghua S Sneck Sami S Li Shuo S Modanese Chiara C Savin Hele H Wang Aihua A Zhao Jianhua J

Data in brief 20161221

This data article is related to the recently published article '20.8% industrial PERC solar cell: ALD Al2O3 rear surface passivation, efficiency loss mechanisms analysis and roadmap to 24%' (Huang et al., 2017) [1]. This paper is about passivated emitter and rear cell (PERC) structures and it describes the quality of the Al2O3 rear-surface passivation layer deposited by atomic layer deposition (ALD), in relation to the processing parameters (e.g. pre-c ...[more]

PMID: 28127578

Similar Datasets

Project description:III/V semiconductor nanostructures have significant potential in device applications, but effective surface passivation is critical due to their large surface-to-volume ratio. For InP such passivation has proven particularly difficult, with substantial depassivation generally observed following dielectric deposition on InP surfaces. We present a novel approach based on passivation with a phosphorus-rich interfacial oxide deposited using a low-temperature process, which is critical to avoid P-desorption. For this purpose we have chosen a POx layer deposited in a plasma-assisted atomic layer deposition (ALD) system at room temperature. Since POx is known to be hygroscopic and therefore unstable in atmosphere, we encapsulate this layer with a thin ALD Al2O3 capping layer to form a POx/Al2O3 stack. This passivation scheme is capable of improving the photoluminescence (PL) efficiency of our state-of-the-art wurtzite (WZ) InP nanowires by a factor of ∼20 at low excitation. If we apply the rate equation analysis advocated by some authors, we derive a PL internal quantum efficiency (IQE) of 75% for our passivated wires at high excitation. Our results indicate that it is more reliable to calculate the IQE as the ratio of the integrated PL intensity at room temperature to that at 10 K. By this means we derive an IQE of 27% for the passivated wires at high excitation (>10 kW cm-2), which constitutes an unprecedented level of performance for undoped InP nanowires. This conclusion is supported by time-resolved PL decay lifetimes, which are also shown to be significantly higher than previously reported for similar wires. The passivation scheme displays excellent long-term stability (>7 months) and is additionally shown to substantially improve the thermal stability of InP surfaces (>300 °C), significantly expanding the temperature window for device processing. Such effective surface passivation is a key enabling technology for InP nanowire devices such as nanolasers and solar cells.

Dataset Information

Data of ALD Al₂O₃ rear surface passivation, Al₂O₃ PERC cell performance, and cell efficiency loss mechanisms of Al₂O₃ PERC cell.

Publications

Data of ALD Al<sub>2</sub>O<sub>3</sub> rear surface passivation, Al<sub>2</sub>O<sub>3</sub> PERC cell performance, and cell efficiency loss mechanisms of Al<sub>2</sub>O<sub>3</sub> PERC cell.

Similar Datasets

OmicsDI is part of the ELIXIR infrastructure

Tweets