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Direct growth of wafer-scale highly oriented graphene on sapphire.

ABSTRACT: Direct chemical vapor deposition (CVD) growth of wafer-scale high-quality graphene on dielectrics is of paramount importance for versatile applications. Nevertheless, the synthesized graphene is typically a polycrystalline film with high density of uncontrolled defects, resulting in a low carrier mobility and high sheet resistance. Here, we report the direct growth of highly oriented monolayer graphene films on sapphire wafers. Our growth strategy is achieved by designing an electromagnetic induction heating CVD operated at elevated temperature, where the high pyrolysis and migration barriers of carbon species are easily overcome. Meanwhile, the embryonic graphene domains are guided into good alignment by minimizing its configuration energy. The thus obtained graphene film accordingly manifests a markedly improved carrier mobility (~14,700 square centimeters per volt per second at 4 kelvin) and reduced sheet resistance (~587 ohms per square), which compare favorably with those from catalytic growth on polycrystalline metal foils and epitaxial growth on silicon carbide.

SUBMITTER: Chen Z

PROVIDER: S-EPMC8604399 | biostudies-literature | 2021 Nov

REPOSITORIES: biostudies-literature

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Direct growth of wafer-scale highly oriented graphene on sapphire.

Chen Zhaolong Z Xie Chunyu C Wang Wendong W Zhao Jinpei J Liu Bingyao B Shan Jingyuan J Wang Xueyan X Hong Min M Lin Li L Huang Li L Lin Xiao X Yang Shenyuan S Gao Xuan X Zhang Yanfeng Y Gao Peng P Novoselov Kostya S KS Sun Jingyu J Liu Zhongfan Z

Science advances 20211119 47

Direct chemical vapor deposition (CVD) growth of wafer-scale high-quality graphene on dielectrics is of paramount importance for versatile applications. Nevertheless, the synthesized graphene is typically a polycrystalline film with high density of uncontrolled defects, resulting in a low carrier mobility and high sheet resistance. Here, we report the direct growth of highly oriented monolayer graphene films on sapphire wafers. Our growth strategy is achieved by designing an electromagnetic indu ...[more]

PMID: 34797705

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Project description:During the past decades micro-electromechanical microphones have largely taken over the market for portable devices, being produced in volumes of billions yearly. Because performance of current devices is near the physical limits, further miniaturization and improvement of microphones for mobile devices poses a major challenge that requires breakthrough device concepts, geometries, and materials. Graphene is an attractive material for enabling these breakthroughs due to its flexibility, strength, nanometer thinness, and high electrical conductivity. Here, we demonstrate that transfer-free 7 nm thick multilayer graphene (MLGr) membranes with diameters ranging from 85-155 to 300 μm can be used to detect sound and show a mechanical compliance up to 92 nm Pa-1, thus outperforming commercially available MEMS microphones of 950 μm with compliances around 3 nm Pa-1. The feasibility of realizing larger membranes with diameters of 300 μm and even higher compliances is shown, although these have lower yields. We present a process for locally growing graphene on a silicon wafer and realizing suspended membranes of patterned graphene across through-silicon holes by bulk micromachining and sacrificial layer etching, such that no transfer is required. This transfer-free method results in a 100% yield for membranes with diameters up to 155 μm on 132 fabricated drums. The device-to-device variations in the mechanical compliance in the audible range (20-20000 Hz) are significantly smaller than those in transferred membranes. With this work, we demonstrate a transfer-free method for realizing wafer-scale multilayer graphene membranes that is compatible with high-volume manufacturing. Thus, limitations of transfer-based methods for graphene microphone fabrication such as polymer contamination, crack formation, wrinkling, folding, delamination, and low-tension reproducibility are largely circumvented, setting a significant step on the route toward high-volume production of graphene microphones.

Dataset Information

Direct growth of wafer-scale highly oriented graphene on sapphire.

Publications

Direct growth of wafer-scale highly oriented graphene on sapphire.

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