Project description:Wafer scale (2") BN grown by metal organic chemical vapor deposition (MOCVD) on sapphire was examined as a weakly interacting dielectric substrate for graphene, demonstrating improved transport properties over conventional sapphire and SiO2/Si substrates. Chemical vapor deposition grown graphene was transferred to BN/sapphire substrates for evaluation of more than 30 samples using Raman and Hall effects measurements. A more than 2x increase in Hall mobility and 10x reduction in sheet carrier density was measured for graphene on BN/sapphire compared to sapphire substrates. Through control of the MOCVD process, BN films with roughness ranging from <0.1 nm to >1 nm were grown and used to study the effects of substrate roughness on graphene transport. Arrays of graphene field effect transistors were fabricated on 2" BN/sapphire substrates demonstrating scalability and device performance enhancement.
Project description:Adding a mechanical degree of freedom to the electrical and optical properties of atomically thin materials can provide an excellent platform to investigate various optoelectrical physics and devices with mechanical motion interaction. The large scale fabrication of such atomically thin materials with suspended structures remains a challenge. Here we demonstrate the wafer-scale bottom-up synthesis of suspended graphene nanoribbon arrays (over 1,000,000 graphene nanoribbons in 2 × 2?cm(2) substrate) with a very high yield (over 98%). Polarized Raman measurements reveal graphene nanoribbons in the array can have relatively uniform-edge structures with near zigzag orientation dominant. A promising growth model of suspended graphene nanoribbons is also established through a comprehensive study that combined experiments, molecular dynamics simulations and theoretical calculations with a phase-diagram analysis. We believe that our results can contribute to pushing the study of graphene nanoribbons into a new stage related to the optoelectrical physics and industrial applications.
Project description:Graphene can be transformed from a semimetal into a semiconductor if it is confined into nanoribbons narrower than 10?nm with controlled crystallographic orientation and well-defined armchair edges. However, the scalable synthesis of nanoribbons with this precision directly on insulating or semiconducting substrates has not been possible. Here we demonstrate the synthesis of graphene nanoribbons on Ge(001) via chemical vapour deposition. The nanoribbons are self-aligning 3° from the Ge?110? directions, are self-defining with predominantly smooth armchair edges, and have tunable width to <10?nm and aspect ratio to >70. In order to realize highly anisotropic ribbons, it is critical to operate in a regime in which the growth rate in the width direction is especially slow, <5?nm?h(-1). This directional and anisotropic growth enables nanoribbon fabrication directly on conventional semiconductor wafer platforms and, therefore, promises to allow the integration of nanoribbons into future hybrid integrated circuits.
Project description:During the past decades micro-electromechanical microphones have largely taken over the market for portable devices, being produced in volumes of billions yearly. Because performance of current devices is near the physical limits, further miniaturization and improvement of microphones for mobile devices poses a major challenge that requires breakthrough device concepts, geometries, and materials. Graphene is an attractive material for enabling these breakthroughs due to its flexibility, strength, nanometer thinness, and high electrical conductivity. Here, we demonstrate that transfer-free 7 nm thick multilayer graphene (MLGr) membranes with diameters ranging from 85-155 to 300 μm can be used to detect sound and show a mechanical compliance up to 92 nm Pa-1, thus outperforming commercially available MEMS microphones of 950 μm with compliances around 3 nm Pa-1. The feasibility of realizing larger membranes with diameters of 300 μm and even higher compliances is shown, although these have lower yields. We present a process for locally growing graphene on a silicon wafer and realizing suspended membranes of patterned graphene across through-silicon holes by bulk micromachining and sacrificial layer etching, such that no transfer is required. This transfer-free method results in a 100% yield for membranes with diameters up to 155 μm on 132 fabricated drums. The device-to-device variations in the mechanical compliance in the audible range (20-20000 Hz) are significantly smaller than those in transferred membranes. With this work, we demonstrate a transfer-free method for realizing wafer-scale multilayer graphene membranes that is compatible with high-volume manufacturing. Thus, limitations of transfer-based methods for graphene microphone fabrication such as polymer contamination, crack formation, wrinkling, folding, delamination, and low-tension reproducibility are largely circumvented, setting a significant step on the route toward high-volume production of graphene microphones.
Project description:A sensitive and selective field-effect transistor (FET) biosensor is demonstrated using vertically-oriented graphene (VG) sheets labeled with gold nanoparticle (NP)-antibody conjugates. VG sheets are directly grown on the sensor electrode using a plasma-enhanced chemical vapor deposition (PECVD) method and function as the sensing channel. The protein detection is accomplished through measuring changes in the electrical signal from the FET sensor upon the antibody-antigen binding. The novel biosensor with unique graphene morphology shows high sensitivity (down to ~2 ng/ml or 13 pM) and selectivity towards specific proteins. The PECVD growth of VG presents a one-step and reliable approach to prepare graphene-based electronic biosensors.
Project description:Demand for rapid and massive-scale exfoliation of bulky graphite remains high in graphene commercialization and property manipulation. We report a procedure utilizing "preformed acidic oxidizing medium (PAOM)" as a modified version of the Hummers' method for fast and reliable synthesis of graphene oxide. Pre-mixing of KMnO4 and concentrated H2SO4 prior to the addition of graphite flakes enables the formation of effectively and efficiently oxidized graphene oxide (EEGO) featured by its high yields and suspension homogeneity. PAOM expedites diffusion of the Mn-oxidants into the graphite galleries, resulting in the rapid graphite oxidation, capable of oxidizing bulky graphite flakes (~0.8?mm in diameter) that can not be realized by the Hummers' method. In the scale-up tests, ten-time amount of graphite can be completely exfoliated by PAOM without need of extended reaction time. The remarkable suspension homogeneity of EEGO can be exploited to deposit ultra-flat coating for wafer-scale nanopatterning. We successfully fabricated GO optical gratings with well-defined periodicity (300?nm) and uniform thickness (variation <7?nm). The combination of the facile and potent PAOM approach with the wafer-scale patterning technique may realize the goal for massive throughput graphene nanoelectronics.
Project description:The direct synthesis of inherently defect-free, large-area graphene on flexible substrates is a key technology for soft electronic devices. In the present work, in situ plasma-assisted thermal chemical vapor deposition is implemented in order to synthesize 4 in. diameter high-quality graphene directly on 10 nm thick Ti-buffered substrates at 100 °C. The in situ synthesized monolayer graphene displays outstanding stretching properties coupled with low sheet resistance. Further improved mechanical and electronic performances are achieved by the in situ multi-stacking of graphene. The four-layered graphene multi-stack is shown to display an ultralow resistance of ≈6 Ω sq-1, which is consistently maintained during the harsh repeat stretching tests and is assisted by self-p-doping under ambient conditions. Graphene-field effect transistors fabricated on polydimethylsiloxane substrates reveal an unprecedented hole mobility of ≈21 000 cm2 V-1 s-1 at a gate voltage of -4 V, irrespective of the channel length, which is consistently maintained during the repeat stretching test of 5000 cycles at 140% parallel strain.
Project description:In virtue of its superior properties, the graphene-based device has enormous potential to be a supplement or an alternative to the conventional silicon-based device in varies applications. However, the functionality of the graphene devices is still limited due to the restriction of the high cost, the low efficiency and the low quality of the graphene growth and patterning techniques. We proposed a simple one-step laser scribing fabrication method to integrate wafer-scale high-performance graphene-based in-plane transistors, photodetectors, and loudspeakers. The in-plane graphene transistors have a large on/off ratio up to 5.34. And the graphene photodetector arrays were achieved with photo responsivity as high as 0.32 A/W. The graphene loudspeakers realize wide-band sound generation from 1 to 50 kHz. These results demonstrated that the laser scribed graphene could be used for wafer-scale integration of a variety of graphene-based electronic, optoelectronic and electroacoustic devices.
Project description:Ultrathin metal-organic framework nanosheets (UMOFNs) deposited on graphene are highly attractive, however direct growth of UMOFNs on graphene with controlled orientations remains challenging. Here, a low-concentration-assisted heterogeneous nucleation strategy is reported for the direct growth of UMOFNs on reduced graphene oxides (rGO) surface with controllable orientations. This general strategy can be applied to construct various UMOFNs on rGO, including Co-ZIF, Ni-ZIF, Co, Cu-ZIF and Co, Fe-ZIF. When UMOFNs are mostly attached perpendicularly on rGO, a 3D foam-like hierarchical architecture (named UMOFNs@rGO-F) is formed with an open pore structure and excellent conductivity, showing excellent performance as electrode materials for Li-ion batteries and oxygen evolution. The contribution has provided a strategy for improving the electrochemical performance of MOFs in energy storage applications.
Project description:One of the main advantages of 2D materials for various applications is that they can be prepared in form of water-based solutions. The high yield and cost-effectiveness of this method make them of great interest for printed electronics, composites, and bio- and healthcare technologies. However, once deposited on a substrate, etching away these solution-processed materials is a difficult task, yet crucial for pattern definition and thus device fabrication. In particular, the realization of micrometer-sized patterns requires mesh and paste optimization when screen-printed or solvent-engineered and surface functionalization when inkjet-printed, both usually involving additional postdeposition steps. These constraints are holding back the integration of these 2D materials in devices and applications. In this work, a method for the fabrication of micrometer-sized well-defined patterns in water-based 2D materials is presented, with an extensive characterization of the films and patterns obtained. The method is ultimately used to create humidity sensors with performance comparable to that of commercial ones. These sensor devices are fabricated onto a 4' silicon and polyethylene terephthalate (PET) wafers to create all-graphene humidity sensors that are flexible, transparent, and compatible with current complementary metal-oxide-semiconductor (CMOS) and roll-to-roll workflows.