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Current Rectification and Photo-Responsive Current Achieved through Interfacial Facet Control of Cu₂O-Si Wafer Heterojunctions.

ABSTRACT: Conductive atomic force microscopy (C-AFM) was employed to perform conductivity measurements on a facet-specific Cu₂O cube, octahedron, and rhombic dodecahedron and intrinsic Si {100}, {111}, and {110} wafers. Similar I-V curves to those recorded previously using a nanomanipulator were obtained with the exception of high conductivity for the Si {110} wafer. Next, I-V curves of different Cu₂O-Si heterostructures were evaluated. Among the nine possible arrangements, Cu₂O octahedron/Si {100} wafer and Cu₂O octahedron/Si {110} wafer combinations show good current rectification behaviors. Under white light illumination, Cu₂O cube/Si {110} wafer and Cu₂O rhombic dodecahedron/Si {111} wafer combinations exhibit the largest degrees of photocurrent, so such interfacial plane-controlled semiconductor heterojunctions with light sensitivity can be applied to make photodetectors. Adjusted band diagrams are presented highlighting different interfacial band bending situations to facilitate or inhibit current flow for different Cu₂O-Si junctions. More importantly, the observation of clear current-rectifying effects produced at the semiconductor heterojunctions with properly selected contacting faces or planes implies that novel field-effect transistors (FETs) can be fabricated using this design strategy, which should integrate well with current chip manufacturing processes.

SUBMITTER: Lee AT

PROVIDER: S-EPMC8614108 | biostudies-literature |

REPOSITORIES: biostudies-literature

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Project description:It is generally known that a layer of amorphous silicon oxide (SiO2) naturally exists on the surface of silicon, resulting in the growth of gallium oxide (Ga2O3) that is no longer affected by substrate crystallinity during sputtering. This work highlights the formation energy between the native amorphous nano-oxide film formed on the Si substrate and monoclinic β-Ga2O3 dominating the preferred orientation prepared for deep ultraviolet photodetectors. The latter were deposited on p-type silicon (p-Si) with (111) orientation using radio frequency sputtering at 600 °C and post rapid thermal annealing (RTA). The X-ray diffraction (XRD) results indicate both as-deposited and postannealing films with the (400) preferred orientation for a layer thickness of 100 nm. However, slight random orientation with the amorphous structure is mixed in the preferred one for the as-deposited film with a thickness of 200 nm and reduced after being annealed at 800 °C, which is observed by XRD and transmission electron microscopy. Meanwhile, thermal-induced massive twin boundaries (TBs) and stacking faults (SFs) were generated when annealed at 1000 °C, owing to the relaxation of lattice strain by the coherent interface. The interfacial bonding energy per unit area (E i) between β-Ga2O3 films with various facets ((001), (010), (100), and (2̅01)) and amorphous SiO2 was calculated using density functional theory. The E i of β-Ga2O3 (100)/SiO2 reveals the highest value (0.289 eV/Å2), which is consistent with the (100) preferred orientation of deposited films. The (100) preferred orientation is the driving force for TBs and SFs. The discrimination of responsivities and the photo/dark current contrast ratio (I ph/I dark) are inversely proportional to the amorphous structure, grain boundaries, TBs, and SFs. Therefore, optimum metal-semiconductor-metal photodetector performance is achieved for RTA-treated samples at 800 °C with an I ph/I dark of 3.91 × 102 and a responsivity of 0.702 A/W (λpeak = 230 nm) at 5 V bias for a 200 nm thin film.

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Current Rectification and Photo-Responsive Current Achieved through Interfacial Facet Control of Cu₂O-Si Wafer Heterojunctions.

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Current Rectification and Photo-Responsive Current Achieved through Interfacial Facet Control of Cu₂O-Si Wafer Heterojunctions.